V(BR)DSS |
RDS(on) ( ) |
ID (A) |
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0.100 @ VGS= 4.5V |
2.4 |
20 |
0.150 @ VGS= 2.5V |
2.0 |
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0.200 @ VGS= 1.8V |
1.7 |
This new generation trench MOSFET from Zetex features low onresistance achievable with low gate drive.
Features |
D |
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•Low on-resistance
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Fast switching speed |
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Low gate drive capability |
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•SOT23 package
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•DC-DC converters
•Power management functions
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Disconnect switches |
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Motor control |
D |
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Ordering information |
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Device |
Reel size |
Tape width |
Quantity per reel |
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Top view |
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ZXMN2B01FTA |
7 |
8 |
3,000 |
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2B1
Issue 2 - March 2007 |
1 |
www.zetex.com |
© Zetex Semiconductors plc 2007
ZXMN2B01F
Parameter |
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Symbol |
Limit |
Unit |
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Drain-source voltage |
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VDSS |
20 |
V |
Gate-source voltage |
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VGS |
±8 |
V |
Continuous drain current |
@ V |
= 4.5V; T =25°C(b) |
ID |
2.4 |
A |
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GS |
amb |
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@ VGS= 4.5V; Tamb=70°C(b) |
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1.9 |
A |
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@ VGS= 4.5V; Tamb=25°C(a) |
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2.1 |
A |
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Pulsed drain current(c) |
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IDM |
11.8 |
A |
Continuous source current (body diode)(b) |
IS |
1.4 |
A |
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Pulsed source current (body diode)(c) |
ISM |
11.8 |
A |
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Power dissipation at T |
=25°C(a) |
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PD |
625 |
mW |
amb |
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Linear derating factor |
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5 |
mW/°C |
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Power dissipation at T |
=25°C(b) |
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PD |
806 |
mW |
amb |
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Linear derating factor |
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6.4 |
mW/°C |
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Operating and storage temperature range |
Tj, Tstg |
-55 to +150 |
°C |
Parameter |
Symbol |
Limit |
Unit |
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Junction to ambient(a) |
R JA |
200 |
°C/W |
Junction to ambient(b) |
R JA |
155 |
°C/W |
NOTES:
(a)For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b)For a device surface mounted on FR4 PCB measured at t 5 sec.
(c)Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 s - pulse width limited by maximum junction temperature.
Issue 2 - March 2007 |
2 |
www.zetex.com |
© Zetex Semiconductors plc 2007
ZXMN2B01F
Issue 2 - March 2007 |
3 |
www.zetex.com |
© Zetex Semiconductors plc 2007