Zetex (Now Diodes) ZXMN2B01F Schematic [ru]

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ZXMN2B01F

20V SOT23 N-channel enhancement mode MOSFET with low gate drive capability

Summary

V(BR)DSS

RDS(on) ( )

ID (A)

 

0.100 @ VGS= 4.5V

2.4

20

0.150 @ VGS= 2.5V

2.0

 

0.200 @ VGS= 1.8V

1.7

Description

This new generation trench MOSFET from Zetex features low onresistance achievable with low gate drive.

Features

D

 

Low on-resistance

Fast switching speed

G

 

 

 

 

 

 

 

 

 

Low gate drive capability

 

 

 

 

 

 

 

 

SOT23 package

S

Applications

DC-DC converters

Power management functions

Disconnect switches

 

 

 

 

S

 

 

 

 

 

Motor control

D

 

 

 

 

 

 

 

 

 

 

 

 

Ordering information

 

 

 

 

 

 

G

 

 

 

 

 

 

 

 

Device

Reel size

Tape width

Quantity per reel

 

 

 

 

 

Top view

 

(inches)

(mm)

 

 

 

 

 

 

 

 

 

 

ZXMN2B01FTA

7

8

3,000

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Device marking

2B1

Issue 2 - March 2007

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© Zetex Semiconductors plc 2007

ZXMN2B01F

Absolute maximum ratings

Parameter

 

 

Symbol

Limit

Unit

 

 

 

 

 

 

Drain-source voltage

 

 

VDSS

20

V

Gate-source voltage

 

 

VGS

±8

V

Continuous drain current

@ V

= 4.5V; T =25°C(b)

ID

2.4

A

 

GS

amb

 

 

 

 

@ VGS= 4.5V; Tamb=70°C(b)

 

1.9

A

 

@ VGS= 4.5V; Tamb=25°C(a)

 

2.1

A

Pulsed drain current(c)

 

 

IDM

11.8

A

Continuous source current (body diode)(b)

IS

1.4

A

Pulsed source current (body diode)(c)

ISM

11.8

A

Power dissipation at T

=25°C(a)

 

PD

625

mW

amb

 

 

 

 

 

Linear derating factor

 

 

 

5

mW/°C

 

 

 

 

 

 

Power dissipation at T

=25°C(b)

 

PD

806

mW

amb

 

 

 

 

 

Linear derating factor

 

 

 

6.4

mW/°C

 

 

 

 

Operating and storage temperature range

Tj, Tstg

-55 to +150

°C

Thermal resistance

Parameter

Symbol

Limit

Unit

 

 

 

 

Junction to ambient(a)

R JA

200

°C/W

Junction to ambient(b)

R JA

155

°C/W

NOTES:

(a)For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.

(b)For a device surface mounted on FR4 PCB measured at t 5 sec.

(c)Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 s - pulse width limited by maximum junction temperature.

Issue 2 - March 2007

2

www.zetex.com

© Zetex Semiconductors plc 2007

ZXMN2B01F

Thermal characteristics

Issue 2 - March 2007

3

www.zetex.com

© Zetex Semiconductors plc 2007

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