Zetex (Now Diodes) ZXMHC3A01T8 Schematic [ru]

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ZXMHC3A01T8

COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET H-BRIDGE

SUMMARY

N-Channel = V(BR)DSS= 30V : RDS(on)= 0.12 ; ID= 3.1A P-Channel = V(BR)DSS= -30V : RDS(on)= 0.21; ID= -2.3A

DESCRIPTION

This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.

FEATURES

Low on-resistance

Fast switching speed

Low threshold

Low gate drive

Single SM-8 surface mount package

APPLICATIONS

Single phase DC fan motor drive

ORDERING INFORMATION

DEVICE

REEL

TAPE

QUANTITY

 

SIZE

WIDTH

PER REEL

 

 

 

 

ZXMHC3A01T8TA

7”

12mm

1,000 units

 

 

 

 

ZXMHC3A01T8TC

13”

12mm

4,000 units

 

 

 

 

DEVICE MARKING

ZXMH C3A01

 

SM8

S1

S4

G1

G4

D1, D2

D3, D4

G2

G3

S2

S3

PINOUT

Top View

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SEMICONDUCTORS

ZXMHC3A01T8

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

N-Channel

 

P-channel

UNIT

 

 

 

 

 

 

Drain-source voltage

VDSS

30

 

-30

V

Gate-source voltage

VGS

±20

 

±20

V

Continuous drain current (VGS= 10V; TA=25°C)(b)(d)

ID

3.1

 

-2.3

A

(VGS= 10V; TA=70°C) (b)(d)

 

2.5

 

-1.8

A

(VGS= 10V; TA=25°C) (a)(d)

 

2.7

 

-2.0

A

Pulsed drain current (c)

IDM

14.5

 

-10.8

A

Continuous source current (body diode) (b)

IS

2.3

 

-2.2

A

Pulsed source current (body diode) (c)

ISM

14.5

 

-10.8

A

Power dissipation at TA =25°C (a) (d)

PD

 

1.3

W

Linear derating factor

 

10.4

mW/°C

 

 

 

 

 

 

Power dissipation at TA =25°C (b) (d)

PD

 

1.7

W

Linear derating factor

 

13.6

mW/°C

 

 

 

 

 

Operating and storage temperature range

Tj, Tstg

-55 to +150

°C

THERMAL RESISTANCE

PARAMETER

SYMBOL

VALUE

UNIT

 

 

 

 

Junction to ambient (a) (d)

R JA

96

°C/W

Junction to ambient (b) (d)

R JA

73

°C/W

NOTES

(a)For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.

(b)For a device surface mounted on FR4 PCB measured at t 10 sec.

(c)Repetitive rating on 50mm x 50mm x 1.6mm FR4, D= 0.02, pulse width 300 S - pulse width limited by maximum junction temperature. Refer to transient thermal impedance graph.

(d)For device with one active die.

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SEMICONDUCTORS

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ZXMHC3A01T8

CHARACTERISTICS

DRAFT ISSUE E - APRIL 2004

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SEMICONDUCTORS

ZXMHC3A01T8

N-channel

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

CONDITIONS

 

 

 

 

 

 

 

STATIC

 

 

 

 

 

 

 

 

 

 

 

 

 

Drain-source breakdown voltage

V(BR)DSS

30

 

 

V

ID= 250 A, VGS=0V

Zero gate voltage drain current

IDSS

 

 

1.0

A

VDS=30V, VGS=0V

Gate-body leakage

IGSS

 

 

100

nA

VGS=±20V, VDS=0V

Gate-source threshold voltage

VGS(th)

1.0

 

3.0

V

ID= 250 A, VDS=VGS

Static drain-source on-state

RDS(on)

 

 

0.12

 

VGS= 10V, ID= 2.5A

resistance (1)

 

 

 

0.18

 

VGS= 4.5V, ID= 2.0A

 

 

 

 

Forward transconductance (1) (3)

gfs

 

3.5

 

S

VDS=4.5V, ID= 2.5A

DYNAMIC (3)

 

 

 

 

 

 

Input capacitance

Ciss

 

190

 

pF

VDS= 25V, VGS=0V

Output capacitance

Coss

 

38

 

pF

 

 

f=1MHz

Reverse transfer capacitance

Crss

 

20

 

pF

 

 

 

SWITCHING(2) (3)

 

 

 

 

 

 

Turn-on-delay time

td(on)

 

1.7

 

ns

 

Rise time

tr

 

2.3

 

ns

VDD= 15V, ID= 2.5A

Turn-off delay time

td(off)

 

6.6

 

ns

RG 6.0, VGS= 10V

Fall time

tf

 

2.9

 

ns

 

Total gate charge

Qg

 

3.9

 

nC

VDS= 15V, VGS= 10V

Gate-source charge

Qgs

 

0.6

 

nC

 

 

ID= 2.5A

Gate drain charge

Qgd

 

0.9

 

nC

 

 

 

SOURCE-DRAIN DIODE

 

 

 

 

 

 

 

 

 

 

 

 

 

Diode forward voltage (1)

VSD

 

 

0.95

V

Tj=25°C, IS= 1.7A,

 

 

 

 

 

 

VGS=0V

Reverse recovery time (3)

trr

 

17.7

 

ns

Tj=25°C, IS= 2.5A,

Reverse recovery charge (3)

Qrr

 

13.0

 

nC

di/dt=100A/ s

NOTES

(1)Measured under pulsed conditions. Pulse width 300 s; duty cycle 2%.

(2)Switching characteristics are independent of operating junction temperature.

(3)For design aid only, not subject to production testing.

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SEMICONDUCTORS

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