Zetex (Now Diodes) ZXM62P02E6 Schematic [ru]

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ZXM62P02E6

20V P-CHANNEL ENHANCEMENT MODE MOSFET

SUMMARY

V(BR)DSS=-20V; RDS(ON)=0.20V; ID=-2.3A

DESCRIPTION

This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power

management applications.

SOT23-6

FEATURES

Low on-resistance

Fast switching speed

Low threshold

Low gate drive

SOT23-6 package

APPLICATIONS

DC - DC Converters

Power Management Functions

Disconnect switches

Motor control

ORDERING INFORMATION

DEVICE

REEL SIZE

TAPE WIDTH (mm)

QUANTITY

 

(inches)

 

PER REEL

 

 

 

Top View

ZXM62P02E6TA

7

8mm embossed

3000 units

ZXM62P02E6TC

13

8mm embossed

10000 units

DEVICE MARKING

2P02

ISSUE 1 - JUNE 2004

1

ZXM62P02E6

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDSS

-20

V

GateSource Voltage

VGS

± 12

V

Continuous Drain Current (VGS=-4.5V; TA=25°C)(b)

ID

-2.3

A

(VGS=-4.5V; TA=70°C)(b)

 

-1.7

 

Pulsed Drain Current (c)

IDM

-13

A

Continuous Source Current (Body Diode)(b)

IS

-1.9

A

Pulsed Source Current (Body Diode)(c)

ISM

-13

A

Power Dissipation at TA=25°C (a)

PD

1.1

W

Linear Derating Factor

 

8.8

mW/°C

Power Dissipation at TA=25°C (b)

PD

1.7

W

Linear Derating Factor

 

13.6

mW/°C

Operating and Storage Temperature Range

Tj:Tstg

-55 to +150

°C

THERMAL RESISTANCE

 

 

 

 

 

 

 

PARAMETER

SYMBOL

VALUE

UNIT

Junction to Ambient (a)

RθJA

113

°C/W

Junction to Ambient (b)

RθJA

73

°C/W

NOTES

(a)For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions

(b)For a device surface mounted on FR4 PCB measured at t<5 secs.

(c)Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.

ISSUE 1 - JUNE 2004

2

 

 

 

 

 

 

 

 

 

ZXM62P02E6

CurrentDrain-I-D (A)

 

 

CHARACTERISTICS

 

 

 

 

 

 

 

 

10ms

 

 

DissipationPower(Watts)

2

 

 

 

 

 

 

 

 

100

 

 

 

 

 

 

 

 

 

 

 

 

 

Refer Note (a)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1.5

 

 

 

 

 

 

 

 

10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Refer Note (b)

 

 

 

 

 

 

 

 

1

 

 

 

Refer Note (a)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1

DC

 

 

 

 

 

 

 

 

 

 

 

 

 

1s

 

 

 

0.5

 

 

 

 

 

 

 

 

 

100ms

 

 

Max

 

 

 

 

 

 

 

 

 

 

1ms

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.1

100µs

 

 

 

0

 

 

 

 

 

 

 

 

1

10

100

 

20

40

60

80

100

120

140

160

0.1

 

0

 

-VDS - Drain-Source Voltage (V)

 

 

 

T - Temperature (° )

 

 

Safe Operating Area

Derating Curve

(°C/W)

80

 

 

 

 

 

 

 

(°C/W)

120

 

 

 

 

 

 

 

 

 

 

Refer Note (b)

 

 

 

 

 

Refer Note (a)

 

 

 

 

 

 

 

 

 

 

 

 

 

100

 

 

 

 

 

 

 

 

60

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Resistance

 

 

 

 

 

 

 

Resistance

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

80

 

 

 

 

 

 

 

 

40

D=0.5

 

 

 

 

 

 

60

D=0.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

40

 

 

 

 

 

 

 

 

Thermal

 

 

 

 

 

 

 

 

Thermal

 

 

 

 

 

 

 

 

20

D=0.2

 

 

 

 

 

 

 

D=0.2

 

 

 

 

 

 

 

 

 

 

 

 

 

20

 

 

 

 

 

 

 

D=0.1

 

 

 

 

 

 

D=0.1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0

D=0.05

Single Pulse

 

 

 

0

D=0.05

Single Pulse

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.001

1

10

100

 

 

0.001

0.01

0.1

1

10

100

1000

 

0.0001

0.01

0.1

 

0.0001

Pulse Width (s)

Pulse Width (s)

Transient Thermal Impedance

Transient Thermal Impedance

ISSUE 1 - JUNE 2004

3

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