Zetex (Now Diodes) ZXM62P02E6 Schematic [ru]
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ZXM62P02E6
20V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS=-20V; RDS(ON)=0.20V; ID=-2.3A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power
management applications.
SOT23-6
FEATURES
∙Low on-resistance
∙Fast switching speed
∙ Low threshold
∙ Low gate drive
∙ SOT23-6 package
APPLICATIONS
∙DC - DC Converters
∙Power Management Functions
∙Disconnect switches
∙ Motor control
ORDERING INFORMATION
DEVICE |
REEL SIZE |
TAPE WIDTH (mm) |
QUANTITY |
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(inches) |
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PER REEL |
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Top View |
ZXM62P02E6TA |
7 |
8mm embossed |
3000 units |
ZXM62P02E6TC |
13 |
8mm embossed |
10000 units |
DEVICE MARKING
∙2P02
ISSUE 1 - JUNE 2004
1
ZXM62P02E6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER |
SYMBOL |
LIMIT |
UNIT |
Drain-Source Voltage |
VDSS |
-20 |
V |
GateSource Voltage |
VGS |
± 12 |
V |
Continuous Drain Current (VGS=-4.5V; TA=25°C)(b) |
ID |
-2.3 |
A |
(VGS=-4.5V; TA=70°C)(b) |
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-1.7 |
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Pulsed Drain Current (c) |
IDM |
-13 |
A |
Continuous Source Current (Body Diode)(b) |
IS |
-1.9 |
A |
Pulsed Source Current (Body Diode)(c) |
ISM |
-13 |
A |
Power Dissipation at TA=25°C (a) |
PD |
1.1 |
W |
Linear Derating Factor |
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8.8 |
mW/°C |
Power Dissipation at TA=25°C (b) |
PD |
1.7 |
W |
Linear Derating Factor |
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13.6 |
mW/°C |
Operating and Storage Temperature Range |
Tj:Tstg |
-55 to +150 |
°C |
THERMAL RESISTANCE |
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PARAMETER |
SYMBOL |
VALUE |
UNIT |
Junction to Ambient (a) |
RθJA |
113 |
°C/W |
Junction to Ambient (b) |
RθJA |
73 |
°C/W |
NOTES
(a)For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b)For a device surface mounted on FR4 PCB measured at t<5 secs.
(c)Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
ISSUE 1 - JUNE 2004
2
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ZXM62P02E6 |
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CurrentDrain-I-D (A) |
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CHARACTERISTICS |
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10ms |
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DissipationPower(Watts) |
2 |
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100 |
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Refer Note (a) |
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1.5 |
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10 |
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Refer Note (b) |
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1 |
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Refer Note (a) |
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1 |
DC |
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1s |
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0.5 |
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100ms |
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Max |
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1ms |
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0.1 |
100µs |
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0 |
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1 |
10 |
100 |
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20 |
40 |
60 |
80 |
100 |
120 |
140 |
160 |
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0.1 |
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0 |
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-VDS - Drain-Source Voltage (V) |
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T - Temperature (° ) |
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Safe Operating Area |
Derating Curve |
(°C/W) |
80 |
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(°C/W) |
120 |
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Refer Note (b) |
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Refer Note (a) |
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100 |
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60 |
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Resistance |
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Resistance |
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80 |
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40 |
D=0.5 |
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60 |
D=0.5 |
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40 |
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Thermal |
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Thermal |
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20 |
D=0.2 |
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D=0.2 |
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20 |
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D=0.1 |
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D=0.1 |
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0 |
D=0.05 |
Single Pulse |
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0 |
D=0.05 |
Single Pulse |
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0.001 |
1 |
10 |
100 |
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0.001 |
0.01 |
0.1 |
1 |
10 |
100 |
1000 |
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0.0001 |
0.01 |
0.1 |
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0.0001 |
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Pulse Width (s) |
Pulse Width (s) |
Transient Thermal Impedance |
Transient Thermal Impedance |
ISSUE 1 - JUNE 2004
3