Zetex (Now Diodes) ZVP4525E6 Schematic [ru]
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ZVP4525E6
250V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
(
DESCRIPTION
This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general high voltage circuits.
SOT89 and SOT223 versions are also available.
FEATURES
•High voltage
•Low on-resistance
•Fast switching speed
•Low gate drive
•Low threshold
•Complementary N-channel Type ZVN4525E6
•SOT23-6 package
APPLICATIONS
•Earth Recall and dialling switches
•Electronic hook switches
•High Voltage Power MOSFET Drivers
•Telecom call routers
•Solid state relays
ORDERING INFORMATION
DEVICE |
REEL SIZE |
TAPE WIDTH (mm) |
QUANTITY |
|
|
(inches) |
|
PER REEL |
|
|
|
|
|
|
ZVP4525TA |
7 |
8mm embossed |
3000 |
units |
|
|
|
|
|
ZVP4525TC |
13 |
8mm embossed |
10000 |
units |
|
|
|
|
|
DEVICE MARKING
•P52
SOT23-6
Top View
ISSUE 1 - MARCH 2001
1
ZVP4525E6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER |
SYMBOL |
LIMIT |
UNIT |
|
|
|
|
Drain-Source Voltage |
VDSS |
-250 |
V |
Gate Source Voltage |
VGS |
± 40 |
V |
Continuous Drain Current (VGS=10V; TA=25°C)(a) |
ID |
-197 |
mA |
(VGS=10V; TA=70°C)(a) |
ID |
-157 |
mA |
Pulsed Drain Current (c) |
IDM |
-1 |
A |
Continuous Source Current (Body Diode) |
IS |
-0.75 |
A |
Pulsed Source Current (Body Diode) |
ISM |
-1 |
A |
Power Dissipation at TA=25°C (a) |
PD |
1.1 |
W |
Linear Derating Factor |
|
8.8 |
mW/°C |
Operating and Storage Temperature Range |
Tj:Tstg |
-55 to +150 |
°C |
THERMAL RESISTANCE
PARAMETER |
SYMBOL |
VALUE |
UNIT |
|
|
|
|
Junction to Ambient (a) |
Rθ JA |
113 |
°C/W |
Junction to Ambient (b) |
Rθ JA |
68 |
°C/W |
NOTES
(a)For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b)For a device surface mounted on FR4 PCB measured at t 5 secs.
(c)Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
NB High Voltage Applications
For high voltage applications, the appropriate industry sector guidelines should be considered with regard to voltage spacing between conductors.
ISSUE 1 - MARCH 2001
2
ZVP4525E6
CHARACTERISTICS
ISSUE 1 - MARCH 2001
3