Zetex (Now Diodes) ZVN3320F Schematic [ru]
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SOT23 N-CHANNEL ENHANCEMENT |
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ZVN3320F |
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MODE VERTICAL DMOS FET |
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ISSUE 3 – DECEMBER 1995 |
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FEATURES |
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200 Volt VDS |
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S |
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RDS(on)= 25 |
Ω |
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D |
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G |
PARTMARKING DETAIL – MU |
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ABSOLUTE MAXIMUM RATINGS. |
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SOT23 |
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PARAMETER |
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SYMBOL |
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VALUE |
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UNIT |
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Drain-Source Voltage |
VDS |
200 |
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V |
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Continuous Drain Current at Tamb=25°C |
ID |
60 |
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mA |
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Pulsed Drain Current |
IDM |
1 |
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A |
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Gate-Source Voltage |
VGS |
± 20 |
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V |
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Power Dissipation at Tamb=25°C |
Ptot |
330 |
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mW |
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Operating and Storage Temperature Range |
Tj:Tstg |
-55 to +150 |
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°C |
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ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER |
SYMBOL |
MIN. |
MAX. |
UNIT |
CONDITIONS. |
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Drain-Source |
BVDSS |
200 |
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V |
ID=1mA, VGS=0V |
Breakdown Voltage |
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Gate-Source Threshold |
VGS(th) |
1.0 |
3.0 |
V |
ID=1mA, VDS= VGS |
Voltage |
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Gate-Body Leakage |
IGSS |
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100 |
nA |
VGS=± 20V, VDS=0V |
Zero Gate Voltage |
IDSS |
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10 |
μA |
VDS=200V, VGS=0V |
Drain Current |
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50 |
μA |
VDS=160V, VGS=0V, |
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T=125°C(2) |
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On-State Drain Current(1) |
ID(on) |
250 |
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mA |
VDS=25V, VGS=10V |
Static Drain-Source On-State |
RDS(on) |
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25 |
Ω |
VGS=10V,ID=100mA |
Resistance (1) |
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Forward Transconductance(1) |
gfs |
75 |
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mS |
VDS=25V,ID=100mA |
(2) |
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Input Capacitance (2) |
Ciss |
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45 |
pF |
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Common Source |
Coss |
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18 |
pF |
VDS=25V, VGS=0V, f=1MHz |
Output Capacitance (2) |
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Reverse Transfer Capacitance |
Crss |
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5 |
pF |
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(2) |
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Turn-On Delay Time (2)(3) |
td(on) |
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5 |
ns |
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Rise Time (2)(3) |
tr |
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7 |
ns |
VDD ≈25V, ID=100mA |
Turn-Off Delay Time (2)(3) |
td(off) |
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6 |
ns |
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Fall Time (2)(3) |
tf |
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6 |
ns |
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(1) Measured under pulsed conditions. Width=300μs. Duty cycle ≤2% |
(2) Sample test. |
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(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
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