Zetex (Now Diodes) ZVN3320F Schematic [ru]

Loading...

SOT23 N-CHANNEL ENHANCEMENT

 

ZVN3320F

MODE VERTICAL DMOS FET

 

 

ISSUE 3 – DECEMBER 1995

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

FEATURES

 

 

 

 

 

 

 

 

 

 

 

 

*

200 Volt VDS

 

 

 

 

S

*

RDS(on)= 25

Ω

 

 

D

 

 

 

 

 

 

 

 

 

 

 

 

 

 

G

PARTMARKING DETAIL – MU

 

 

 

 

 

ABSOLUTE MAXIMUM RATINGS.

 

 

 

SOT23

 

 

 

 

 

 

PARAMETER

 

SYMBOL

 

VALUE

 

UNIT

 

 

 

 

 

 

 

 

Drain-Source Voltage

VDS

200

 

V

 

Continuous Drain Current at Tamb=25°C

ID

60

 

mA

 

Pulsed Drain Current

IDM

1

 

A

 

Gate-Source Voltage

VGS

± 20

 

V

 

Power Dissipation at Tamb=25°C

Ptot

330

 

mW

 

Operating and Storage Temperature Range

Tj:Tstg

-55 to +150

 

°C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL

MIN.

MAX.

UNIT

CONDITIONS.

 

 

 

 

 

 

Drain-Source

BVDSS

200

 

V

ID=1mA, VGS=0V

Breakdown Voltage

 

 

 

 

 

 

 

 

 

 

 

Gate-Source Threshold

VGS(th)

1.0

3.0

V

ID=1mA, VDS= VGS

Voltage

 

 

 

 

 

 

 

 

 

 

 

Gate-Body Leakage

IGSS

 

100

nA

VGS=± 20V, VDS=0V

Zero Gate Voltage

IDSS

 

10

μA

VDS=200V, VGS=0V

Drain Current

 

 

50

μA

VDS=160V, VGS=0V,

 

 

 

 

 

T=125°C(2)

 

 

 

 

 

 

On-State Drain Current(1)

ID(on)

250

 

mA

VDS=25V, VGS=10V

Static Drain-Source On-State

RDS(on)

 

25

Ω

VGS=10V,ID=100mA

Resistance (1)

 

 

 

 

 

 

 

 

 

 

 

Forward Transconductance(1)

gfs

75

 

mS

VDS=25V,ID=100mA

(2)

 

 

 

 

 

Input Capacitance (2)

Ciss

 

45

pF

 

Common Source

Coss

 

18

pF

VDS=25V, VGS=0V, f=1MHz

Output Capacitance (2)

 

 

 

 

 

 

 

 

 

 

 

Reverse Transfer Capacitance

Crss

 

5

pF

 

(2)

 

 

 

 

 

 

 

 

 

 

 

Turn-On Delay Time (2)(3)

td(on)

 

5

ns

 

Rise Time (2)(3)

tr

 

7

ns

VDD 25V, ID=100mA

Turn-Off Delay Time (2)(3)

td(off)

 

6

ns

 

 

Fall Time (2)(3)

tf

 

6

ns

 

(1) Measured under pulsed conditions. Width=300μs. Duty cycle 2%

(2) Sample test.

(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator

3 - 398

+ 1 hidden pages