Zetex (Now Diodes) FSD273TA, ZMDC953TA, ZV950V2TA, ZV952V2TA, ZV953V2TA Schematic [ru]

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950 series

SILICON LOW VOLTAGE HYPERABRUPT VARACTOR DIODES

ZV950V2, ZV952V2, ZV953V2, ZMDC953, FSD273

Device Description

A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics, low voltage operation and high Q. Low reverse current ensures very low phase noise performance. These parts can be used with control voltages from 0.5V to 2.5V, making them ideal for 3 volt systems. Available in miniature surface mount packages.

Features

Close tolerance C-V characteristics

Tuning from 0.5 to 2.5 Volts to suit 3 volt systems

Low IR (typically 10pA)

Excellent phase noise performance

High Q at low voltage

Miniature surface mount packages

Band selection for DAB applications - FSD273

Applications

VCXO and TCXO

Wireless communications

Pagers

Mobile radio

Digital Radio receivers

ISSUE 2 - MAY 2002

1

950 series

TUNING CHARACTERISTICS at Tamb = 25C

PART

CAPACITANCE pF

CAPACITANCE pF

CAPACITANCE

Minimum Q

 

VR=0.5V, f=1MHz

VR=1.5V,

f=1MHz

RATIO C0.5 / C2.5

VR=0.5V

 

f=1MHz

f=50MHz

 

Min

Min

 

Max

Min

 

 

 

 

 

 

 

 

ZV950V2

9.5

6.3

 

7.8

2.0

250

 

 

 

 

 

 

 

ZV952V2

19

12.7

 

15.7

2.0

250

 

 

 

 

 

 

 

ZV953V2

45

30

 

37

2.0

200

 

 

 

 

 

 

 

ZMDC953(DUAL)

45

30

 

37

2.0

250

 

 

 

 

 

 

 

ZMDC953 is available banded to tighter capacitance range. This product has the order code FSD273TA. Measured at VR=1.5V the bands are

Band A = 30.0 to 32.5

Band B = 32.3 to 34.7

Band C = 34.5 to 37.0

Product is supplied in reels. A banded reel will only contain a single band. Shipments containing several reels may have reels in different bands. It is not possible to supply a specific band as processing affects which bands are available

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

MAX

UNIT

 

 

 

 

Reverse voltage

VR

12

V

Forward current

IF

100

mA

Power dissipation at Tamb = 25 C SOD523

Ptot

250

mW

Power dissipation at Tamb = 25 C SOT323

Ptot

300

mW

ELECTRICAL CHARACTERISTICS at Tamb = 25°C

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

 

 

 

 

 

 

Reverse breakdown voltage

IR = 10uA

12

 

 

V

Reverse voltage leakage

VR = 8V

 

0.010

20

nA

ISSUE 2 - MAY 2002

2

950 series

TYPICAL CHARACTERISTICS

100

 

 

 

 

1.4

 

 

 

 

 

 

Resistance( )

Tj = 25°C

 

 

 

 

 

 

 

 

 

 

 

1.2

 

 

 

 

 

ZV953V2

1.0

ZV950V2

 

 

 

 

 

 

 

 

 

 

 

 

10

 

 

ZMDC953

0.8

 

 

 

 

 

 

 

 

 

 

 

 

 

Capacitance(pF)

 

 

ZV952V2

0.6

ZV952V2

 

 

 

0.4

 

 

 

 

ZV950V2

ZV953V2

 

J

Tj = 25°C

 

Series

0.2

 

 

 

 

 

C

f = 1MHz

 

 

 

ZMDC953

 

 

 

S

 

 

1

0.1

1

10

R

0.010

100

1000

 

VR Reverse Voltage (V)

Frequency (MHz)

Capacitance v Reverse Voltage

Series Resistance v Frequency

 

1.08

 

 

 

 

 

 

 

 

1000

 

 

 

 

 

 

Capacitance

1.06

 

Tj

= 85°C

 

 

 

 

(ppm/°C)

 

 

 

Tj = -55°Cto +85°C

 

 

1.04

 

 

 

Tj = 55°C

 

 

800

 

 

f = 1MHz

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1.02

 

 

 

 

 

 

 

 

600

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Normalised

1.00

Tj

= 25°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

C

400

 

 

 

 

 

 

0.98

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

/T

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.96

 

 

 

 

 

 

 

J

 

 

 

 

 

 

 

 

 

 

 

Tj = -15°C

 

 

 

200

 

 

 

 

 

 

 

0.94

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Tj = -55°C

 

 

 

 

 

 

 

 

 

 

 

 

 

0.920

 

 

 

 

 

 

 

00

 

 

 

 

 

 

 

 

1

2

3

4

5

6

 

1

2

3

4

5

6

VR Reverse Voltage (V)

VR Reverse Voltage (V)

Normalised Capacitance v Voltage

CJ Temperature Coefficient v VR

 

1000

 

 

 

 

 

 

(pA)

 

 

 

 

 

 

+85°C

 

 

 

 

 

 

 

 

 

Leakage

 

100

 

 

 

 

 

 

 

 

 

 

 

 

+55°C

 

 

 

 

 

 

 

 

 

Reverse

 

10

 

 

 

 

+25°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

R

 

 

 

 

 

 

 

I

 

10

2

4

6

8

10

12

 

 

VR Reverse Voltage (V)

Leakage v Reverse Voltage

ISSUE 2 - MAY 2002

3

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