Zetex (Now Diodes) ZUMT918 Schematic [ru]

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SOT323 NPN SILICON PLANAR

ZUMT918

VHF/UHF TRANSISTOR

ISSUE 1 – DECEMBER 1998

 

 

 

 

PARTMARKING DETAIL – T5

 

 

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

 

 

 

 

Collector-Base Voltage

VCBO

30

V

Collector-Emitter Voltage

VCEO

15

V

Emitter-Base Voltage

VEBO

3

V

Continuous Collector Current

IC

100

mA

Power Dissipation at Tamb=25°C

Ptot

330

mW

Operating and Storage Temperature Range

Tj:Tstg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

CONDITIONS.

 

 

 

 

 

 

 

Collector-Base

V(BR)CBO

30

 

 

V

IC=1μA, IE=0

Breakdown Voltage

 

 

 

 

 

 

Collector-Emitter

VCEO(sus)

15

 

 

V

IC=3mA, IB=0*

Sustaining Voltage

 

 

 

 

 

 

Emitter-Base

V(BR)EBO

3

 

 

V

IE=10μA, IC=0

Breakdown Voltage

 

 

 

 

 

 

Collector Cut-Off Current

ICBO

 

 

0.05

μA

VCB=15V, IE=0

Collector-Emitter

VCE(sat)

 

 

0.4

V

IC=10mA, IB=1mA

Saturation Voltage

 

 

 

 

 

 

Base-Emitter

VBE(sat)

 

 

1.0

V

IC=10mA, IB=1mA

Saturation Voltage

 

 

 

 

 

 

Static Forward Current

hFE

20

 

 

 

IC=3mA, VCE=1V

Transfer Ratio

 

 

 

 

 

 

Transition Frequency

fT

600

 

 

MHz

IC=4mA, VCE=10V

 

 

 

 

 

 

f=100MHz

Output Capacitance

Cobo

 

 

3.0

pF

VCB=0V, f=1MHz

 

 

 

 

1.7

pF

VCB=10V, f=1MHz

Input Capacitance

Cibo

 

 

1.6

pF

VEB=0.5V,f=1MHz

Noise Figure

N

 

 

6.0

dB

VCE=6V, IC=1mA

 

 

 

 

 

 

f=60MHz, RG=400Ω

Common Emitter

Gpe

 

15

 

dB

VCB=12V, IC=6mA

Power Gain

 

 

 

 

 

f=200MHz

*Measured under pulsed conditions. Pulse Width=300μs. Duty cycle 2% Spice parameter data is available upon request for this device

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