Zetex (Now Diodes) ZUMT817-25, ZUMT817-40 Schematic [ru]

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SOT323 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

ISSUE 2 – FEBRUARY 1999

ZUMT817-25 ZUMT817-40

PARTMARKING DETAILS

ZUMT817-25

-

T7

 

ZUMT817-40

-

T23

COMPLEMENTARY TYPES

ZUMT817-25

-

ZUMT807-25

 

ZUMT817-40

-

ZUMT807-40– T7

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

 

 

 

 

Collector-Base Voltage

VCBO

50

V

Collector-Emitter Voltage

VCEO

45

V

Emitter-Base Voltage

VEBO

5

V

Peak Pulse Current

ICM

1

A

Continuous Collector Current

IC

500

mA

Base Current

IB

100

mA

Peak Base Current

IBM

200

mA

Power Dissipation at Tamb=25°C

Ptot

330

mW

Operating and Storage Temperature Range

Tj:Tstg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

CONDITIONS.

 

 

 

 

 

 

 

 

Collector Cut-Off

ICBO

 

 

0.1

A

VCB=20V, IE=0

Current

 

 

 

5

A

VCB=20V, IE=0, Tamb=150°C

Emitter Cut-Off Current

IEBO

 

 

10

A

VEB=5V, IC=0

Collector-Emitter

VCE(sat)

 

 

700

mV

IC=500mA, IB=50mA*

Saturation Voltage

 

 

 

 

 

 

Base-Emitter

VBE(on)

 

 

1.2

V

IC=500mA, VCE=1V*

Turn-on Voltage

 

 

 

 

 

 

Static Forward

hFE

100

 

600

 

IC=100mA, VCE=1V*

Current Transfer Ratio

 

40

 

 

 

IC=500mA, VCE=1V*

 

-25

 

160

 

400

 

IC=100mA, VCE=1V*

 

-40

 

250

 

600

 

IC=100mA, VCE=1V*

Transition

fT

 

200

 

MHz

IC=10mA, VCE=5V

Frequency

 

 

 

 

 

f=35MHz

Collector-base

Cobo

 

5.0

 

pF

IE=Ie=0, VCB=10V

Capacitance

 

 

 

 

 

f=1MHz

*Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2%

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