SOT323 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS
ISSUE 2 – FEBRUARY 1999
ZUMT817-25 ZUMT817-40
PARTMARKING DETAILS |
ZUMT817-25 |
- |
T7 |
|
ZUMT817-40 |
- |
T23 |
COMPLEMENTARY TYPES |
ZUMT817-25 |
- |
ZUMT807-25 |
|
ZUMT817-40 |
- |
ZUMT807-40– T7 |
ABSOLUTE MAXIMUM RATINGS.
PARAMETER |
SYMBOL |
VALUE |
UNIT |
|
|
|
|
Collector-Base Voltage |
VCBO |
50 |
V |
Collector-Emitter Voltage |
VCEO |
45 |
V |
Emitter-Base Voltage |
VEBO |
5 |
V |
Peak Pulse Current |
ICM |
1 |
A |
Continuous Collector Current |
IC |
500 |
mA |
Base Current |
IB |
100 |
mA |
Peak Base Current |
IBM |
200 |
mA |
Power Dissipation at Tamb=25°C |
Ptot |
330 |
mW |
Operating and Storage Temperature Range |
Tj:Tstg |
-55 to +150 |
°C |
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER |
SYMBOL |
MIN. |
TYP. |
MAX. |
UNIT |
CONDITIONS. |
|
|
|
|
|
|
|
|
|
Collector Cut-Off |
ICBO |
|
|
0.1 |
A |
VCB=20V, IE=0 |
|
Current |
|
|
|
5 |
A |
VCB=20V, IE=0, Tamb=150°C |
|
Emitter Cut-Off Current |
IEBO |
|
|
10 |
A |
VEB=5V, IC=0 |
|
Collector-Emitter |
VCE(sat) |
|
|
700 |
mV |
IC=500mA, IB=50mA* |
|
Saturation Voltage |
|
|
|
|
|
|
|
Base-Emitter |
VBE(on) |
|
|
1.2 |
V |
IC=500mA, VCE=1V* |
|
Turn-on Voltage |
|
|
|
|
|
|
|
Static Forward |
hFE |
100 |
|
600 |
|
IC=100mA, VCE=1V* |
|
Current Transfer Ratio |
|
40 |
|
|
|
IC=500mA, VCE=1V* |
|
|
-25 |
|
160 |
|
400 |
|
IC=100mA, VCE=1V* |
|
-40 |
|
250 |
|
600 |
|
IC=100mA, VCE=1V* |
Transition |
fT |
|
200 |
|
MHz |
IC=10mA, VCE=5V |
|
Frequency |
|
|
|
|
|
f=35MHz |
|
Collector-base |
Cobo |
|
5.0 |
|
pF |
IE=Ie=0, VCB=10V |
|
Capacitance |
|
|
|
|
|
f=1MHz |
*Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2%