Zetex (Now Diodes) ZUMT807-25, ZUMT807-40 Schematic [ru]

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SOT323 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

ISSUE 2 – FEBRUARY 1999

ZUMT807-25 ZUMT807-40

PARTMARKING DETAILS

ZUMT807-25

-

T8

 

ZUMT807-40

-

T24

COMPLEMENTARY TYPES

ZUMT807-25

-

ZUMT817-25

 

ZUMT807-40

-

ZUMT817-40

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

 

 

 

 

Collector-Base Voltage

VCBO

-50

V

Collector-Emitter Voltage

VCEO

-45

V

Emitter-Base Voltage

VEBO

-5

V

Peak Pulse Current

ICM

-1

A

Continuous Collector Current

IC

-500

mA

Base Current

IB

-100

mA

Peak Base Current

IBM

-200

mA

Power Dissipation at Tamb=25°C

Ptot

330

mW

Operating and Storage Temperature Range

Tj:Tstg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

CONDITIONS.

 

 

 

 

 

 

 

 

Collector Cut-Off

ICBO

 

 

-0.1

A

VCB=-20V, IE=0

Current

 

 

 

-5

A

VCB=-20V, IE=0, Tamb=150°C

Emitter Cut-Off Current

IEBO

 

 

-10

A

VEB=-5V, IC=0

Collector-Emitter

VCE(sat)

 

 

-700

mV

IC=-500mA, IB=-50mA*

Saturation Voltage

 

 

 

 

 

 

Base-Emitter

VBE(on)

 

 

-1.2

V

IC=-500mA, VCE=-1V*

Turn-on Voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Static Forward Current

hFE

100

 

600

 

IC=-100mA, VCE=-1V*

Transfer Ratio

 

40

 

 

 

IC=-500mA, VCE=-1V*

 

-25

 

160

 

400

 

IC=-100mA, VCE=-1V*

 

-40

 

250

 

600

 

IC=-100mA, VCE=-1V*

Transition

 

fT

 

100

 

MHz

IC=-10mA, VCE=-5V

Frequency

 

 

 

 

 

 

f=35MHz

Collector-base

 

Cobo

 

8.0

 

pF

IE=Ie=0, VCB=-10V

Capacitance

 

 

 

 

 

 

f=1MHz

 

 

 

 

 

 

 

 

*Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2%

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