Zetex (Now Diodes) ZUMT619 Schematic [ru]
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Super323™ SOT323 NPN SILICON POWER |
ZUMT619 |
(SWITCHING) TRANSISTOR |
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ISSUE 2 - DECEMBER 2008 |
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FEATURES
*500mW POWER DISSIPATION
*IC CONT 1A
*2A Peak Pulse Current
*Excellent HFE Characteristics Up To 2A (pulsed)
*Extremely Low Equivalent On Resistance; RCE(sat)
APPLICATIONS
*LCD backlighting inverter circuits
*Boost functions in DC-DC converters
DEVICE TYPE |
COMPLEMENT |
PARTMARKING |
RCE(sat) |
ZUMT619 |
ZUMT720 |
T63 |
160mΩ at 1A |
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ABSOLUTE MAXIMUM RATINGS.
PARAMETER |
SYMBOL |
VALUE |
UNIT |
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Collector-Base Voltage |
VCBO |
50 |
V |
Collector-Emitter Voltage |
VCEO |
50 |
V |
Emitter-Base Voltage |
VEBO |
5 |
V |
Peak Pulse Current** |
ICM |
2 |
A |
Continuous Collector Current |
IC |
1.0 |
A |
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Base Current |
IB |
200 |
mA |
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Power Dissipation at Tamb=25°C |
Ptot |
385 † |
mW |
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500 ‡ |
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Operating and Storage Temperature |
Tj:Tstg |
-55 to +150 |
°C |
Range |
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†Recommended Ptot calculated using FR4 measuring 10 x 8 x 0.6mm (still air).
‡Maximum power dissipation is calculated assuming that the device is mounted on FR4
size 25x25x0.6mm and using comparable measurement methods adopted by other suppliers.
ZUMT619
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER |
SYMBOL |
MIN. |
TYP. |
MAX. |
UNIT |
CONDITIONS. |
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Collector-Base |
V(BR)CBO |
50 |
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V |
IC= 100μA |
Breakdown Voltage |
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Collector-Emitter |
V(BR)CEO |
50 |
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V |
IC= 10mA* |
Breakdown Voltage |
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Emitter-Base |
V(BR)EBO |
5 |
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V |
IE= 100μA |
Breakdown Voltage |
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Collector Cut-Off |
ICBO |
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10 |
nA |
VCB= 40V |
Current |
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Emitter Cut-Off |
IEBO |
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10 |
nA |
VEB= 4V |
Current |
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Collector Emitter |
ICES |
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10 |
nA |
VCES= 40V |
Cut-Off Current |
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Collector-Emitter |
VCE(sat) |
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24 |
35 |
mV |
IC= 100mA, IB= 10mA* |
Saturation Voltage |
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60 |
80 |
mV |
IC= 250mA, IB= 10mA* |
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120 |
200 |
mV |
IC= 500mA, IB= 10mA* |
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160 |
270 |
mV |
IC= 1A, IB= 50mA* |
Base-Emitter |
VBE(sat) |
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940 |
1100 |
mV |
IC= 1A, IB= 50mA* |
Saturation Voltage |
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Base-Emitter |
VBE(on) |
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850 |
1100 |
mV |
IC= 1A, VCE= 2V* |
Turn-On Voltage |
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Static Forward |
hFE |
200 |
420 |
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IC=10mA, VCE= 2V* |
Current Transfer |
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300 |
450 |
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IC= 100mA, VCE=2 V* |
Ratio |
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200 |
350 |
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IC= 500mA, VCE=2V* |
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75 |
130 |
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IC= 1A, VCE= 2V* |
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20 |
60 |
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IC= 1.5A, VCE=2 V* |
Transition |
fT |
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215 |
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MHz |
IC= 50mA, VCE=10V |
Frequency |
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f= 100MHz |
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Output Capacitance |
Cobo |
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6 |
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pF |
VCB= 10V, f=1MHz |
Turn-On Time |
t(on) |
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150 |
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ns |
VCC=10 V, IC= 1A |
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IB1=IB2=100mA |
Turn-Off Time |
t(off) |
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425 |
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ns |
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*Measured under pulsed conditions. Pulse width=300μs. Duty cycle ≤ 2%