Zetex (Now Diodes) ZUMT619 Schematic [ru]

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Super323SOT323 NPN SILICON POWER

ZUMT619

(SWITCHING) TRANSISTOR

ISSUE 2 - DECEMBER 2008

 

 

FEATURES

*500mW POWER DISSIPATION

*IC CONT 1A

*2A Peak Pulse Current

*Excellent HFE Characteristics Up To 2A (pulsed)

*Extremely Low Equivalent On Resistance; RCE(sat)

APPLICATIONS

*LCD backlighting inverter circuits

*Boost functions in DC-DC converters

DEVICE TYPE

COMPLEMENT

PARTMARKING

RCE(sat)

ZUMT619

ZUMT720

T63

160mΩ at 1A

 

 

 

 

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

 

 

 

 

Collector-Base Voltage

VCBO

50

V

Collector-Emitter Voltage

VCEO

50

V

Emitter-Base Voltage

VEBO

5

V

Peak Pulse Current**

ICM

2

A

Continuous Collector Current

IC

1.0

A

 

 

 

 

Base Current

IB

200

mA

 

 

 

 

Power Dissipation at Tamb=25°C

Ptot

385 †

mW

 

 

500 ‡

 

 

 

 

 

Operating and Storage Temperature

Tj:Tstg

-55 to +150

°C

Range

 

 

 

 

 

 

 

Recommended Ptot calculated using FR4 measuring 10 x 8 x 0.6mm (still air).

Maximum power dissipation is calculated assuming that the device is mounted on FR4

size 25x25x0.6mm and using comparable measurement methods adopted by other suppliers.

ZUMT619

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

CONDITIONS.

 

 

 

 

 

 

 

Collector-Base

V(BR)CBO

50

 

 

V

IC= 100μA

Breakdown Voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector-Emitter

V(BR)CEO

50

 

 

V

IC= 10mA*

Breakdown Voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

Emitter-Base

V(BR)EBO

5

 

 

V

IE= 100μA

Breakdown Voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector Cut-Off

ICBO

 

 

10

nA

VCB= 40V

Current

 

 

 

 

 

 

 

 

 

 

 

 

 

Emitter Cut-Off

IEBO

 

 

10

nA

VEB= 4V

Current

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector Emitter

ICES

 

 

10

nA

VCES= 40V

Cut-Off Current

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector-Emitter

VCE(sat)

 

24

35

mV

IC= 100mA, IB= 10mA*

Saturation Voltage

 

 

60

80

mV

IC= 250mA, IB= 10mA*

 

 

 

120

200

mV

IC= 500mA, IB= 10mA*

 

 

 

160

270

mV

IC= 1A, IB= 50mA*

Base-Emitter

VBE(sat)

 

940

1100

mV

IC= 1A, IB= 50mA*

Saturation Voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

Base-Emitter

VBE(on)

 

850

1100

mV

IC= 1A, VCE= 2V*

Turn-On Voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

Static Forward

hFE

200

420

 

 

IC=10mA, VCE= 2V*

Current Transfer

 

300

450

 

 

IC= 100mA, VCE=2 V*

Ratio

 

200

350

 

 

IC= 500mA, VCE=2V*

 

 

75

130

 

 

IC= 1A, VCE= 2V*

 

 

20

60

 

 

IC= 1.5A, VCE=2 V*

Transition

fT

 

215

 

MHz

IC= 50mA, VCE=10V

Frequency

 

 

 

 

 

f= 100MHz

 

 

 

 

 

 

 

Output Capacitance

Cobo

 

6

 

pF

VCB= 10V, f=1MHz

Turn-On Time

t(on)

 

150

 

ns

VCC=10 V, IC= 1A

 

 

 

 

 

 

IB1=IB2=100mA

Turn-Off Time

t(off)

 

425

 

ns

 

 

 

*Measured under pulsed conditions. Pulse width=300μs. Duty cycle 2%

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