Zetex (Now Diodes) ZUMT5179 Schematic [ru]

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SOT323 NPN SILICON PLANAR

ZUMT5179

HIGH FREQUENCY TRANSISTOR

ISSUE 1- NOVEMBER 1998

FEATURES

*High fT=900MHz Min

*Max capacitance=1pF

*Low noise 4.5dB

PARTMARKING DETAIL - T6

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

 

 

 

 

Collector-Base Voltage

VCBO

20

V

Collector-Emitter Voltage

VCEO

12

V

Emitter-Base Voltage

VEBO

2.5

V

Continuous Collector Current

IC

50

mA

Power Dissipation

Ptot

330

mW

Operating and Storage Temperature Range

Tj:Tstg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL

MIN.

MAX.

UNIT

CONDITIONS.

Collector-Emitter Sustaining

VCEO(SUS)

12

 

V

IC= 3mA, IB=0

Voltage

 

 

 

 

 

Collector-Base Breakdown

V(BR)CBO

20

 

V

IC= 1μA, IE=0

Voltage

 

 

 

 

 

Emitter-Base Breakdown

V(BR)EBO

2.5

 

V

IE=10μA, IC=0

Voltage

 

 

 

 

 

Collector Cut-Off

ICBO

 

0.02

μA

VCB=15V, IE=0

Current

 

 

1.0

μA

VCB=15V, IE=0, Tamb=150°C

Static Forward Current

hFE

25

250

 

IC=3mA, VCE=1V

Transfer Ratio

 

 

 

 

 

Collector-Emitter Saturation

VCE(sat)

 

0.4

V

IC=10mA, IB=1mA

Voltage

 

 

 

 

 

Base-Emitter

VBE(sat)

 

1.0

V

IC=10mA, IB=1mA

Saturation Voltage

 

 

 

 

 

Transition Frequency

fT

900

2000

MHz

IC=5mA, VCE=6V, f=100MHz

Collector-Base Capacitance

Ccb

 

1

pF

IE=0, VCB=10V, f=1MHz

Small Signal Current Gain

hfe

25

300

 

IC=2mA, VCE=6V, f=1KHz

Collector Base Time Constant

rb’Cc

3

14

ps

IE=2mA, VCB=6V, f=31.9MHz

Noise Figure

NF

 

4.5

dB

IC=1.5mA, VCE=6V

 

 

 

 

 

RS=50Ω, f=200MHz

Common-Emitter Amplifier

Gpe

15

 

dB

IC=5mA, VCE=6V

Power Gain

 

 

 

 

f=200MHz

Spice parameter data is available upon request for this device

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