Zetex (Now Diodes) ZLLS1000 Schematic [ru]
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ZLLS1000
40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE
SUMMARY
Schottky Diode VR = 40V; IF = 1.16A; IR = 20 A
DESCRIPTION
This compact SOT23 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage and low forward voltage ensuring suitability for applications requiring efficient operation at higher temperatures (above 85 C) see Operational Efficiency chart on page 4.
Key benefits:
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
PCB area savings
FEATURES
• Low equivalent on resistance
•Extremely low leakage (20 A @30V)
•High current capability (IF = 1.16A)
•Low VF, fast switching Schottky
•SOT23 package
•ZLLS1000 complements low temperature equivalent ZHCS1000
•Package thermally rated to 150 C
APPLICATIONS
• DC - DC converters
•Strobes
•Mobile phones
•Charging circuits
•Motor control
ORDERING INFORMATION |
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DEVICE |
REEL |
TAPE WIDTH |
QUANTITY |
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(inches) |
(mm) |
PER REEL |
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ZLLS1000TA |
7 |
8mm embossed |
3000 units |
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ZLLS1000TC |
13 |
8mm embossed |
10000 units |
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DEVICE MARKING |
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Top view |
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L10 |
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ISSUE 3 - MAY 2006
1 |
SEMICONDUCTORS |
ZLLS1000
ABSOLUTE MAXIMUM RATINGS
PARAMETER |
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SYMBOL |
VALUE |
UNIT |
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Schottky diode |
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Continuous reverse voltage |
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VR |
40 |
V |
Forward current |
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IF |
1.16 |
A |
Peak repetitive forward current |
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IFPK |
1.88 |
A |
Rectangular pulse duty cycle |
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Non repetitive forward current |
t= 100 s |
IFSM |
22 |
A |
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t= 10ms |
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6.4 |
A |
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Package |
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Power dissipation at Tamb=25 C |
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single die continuous |
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PD |
625 |
mW |
single die measured at t<5 secs |
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840 |
mW |
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Storage temperature range |
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Tstg |
-55 to +150 |
C |
Junction temperature |
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Tj |
150 |
C |
THERMAL RESISTANCE
PARAMETER |
SYMBOL |
VALUE |
UNIT |
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Junction to ambient (a) |
R JA |
200 |
°C/W |
Junction to ambient (b) |
R JA |
149 |
°C/W |
Notes
(a)For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b)For a device surface mounted on FR4 PCB measured at t<5secs.
ISSUE 3 - MAY 2006
SEMICONDUCTORS |
2 |
ZLLS1000
TYPICAL CHARACTERISTICS
ISSUE 3 - MAY 2006
3 |
SEMICONDUCTORS |