Zetex (Now Diodes) ZLLS1000 Schematic [ru]

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ZLLS1000

40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE

SUMMARY

Schottky Diode VR = 40V; IF = 1.16A; IR = 20 A

DESCRIPTION

This compact SOT23 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage and low forward voltage ensuring suitability for applications requiring efficient operation at higher temperatures (above 85 C) see Operational Efficiency chart on page 4.

Key benefits:

Performance capability equivalent to much larger packages

Improved circuit efficiency & power levels

PCB area savings

FEATURES

Low equivalent on resistance

Extremely low leakage (20 A @30V)

High current capability (IF = 1.16A)

Low VF, fast switching Schottky

SOT23 package

ZLLS1000 complements low temperature equivalent ZHCS1000

Package thermally rated to 150 C

APPLICATIONS

DC - DC converters

Strobes

Mobile phones

Charging circuits

Motor control

ORDERING INFORMATION

 

 

 

 

 

 

 

DEVICE

REEL

TAPE WIDTH

QUANTITY

 

 

 

 

 

 

 

 

 

 

 

 

 

(inches)

(mm)

PER REEL

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ZLLS1000TA

7

8mm embossed

3000 units

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ZLLS1000TC

13

8mm embossed

10000 units

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DEVICE MARKING

 

 

 

 

 

Top view

L10

 

 

 

 

 

 

 

 

 

ISSUE 3 - MAY 2006

1

SEMICONDUCTORS

ZLLS1000

ABSOLUTE MAXIMUM RATINGS

PARAMETER

 

SYMBOL

VALUE

UNIT

 

 

 

 

 

Schottky diode

 

 

 

 

 

 

 

 

 

Continuous reverse voltage

 

VR

40

V

Forward current

 

IF

1.16

A

Peak repetitive forward current

 

IFPK

1.88

A

Rectangular pulse duty cycle

 

 

 

 

 

 

 

 

 

Non repetitive forward current

t= 100 s

IFSM

22

A

 

t= 10ms

 

6.4

A

 

 

 

 

 

Package

 

 

 

 

 

 

 

 

 

Power dissipation at Tamb=25 C

 

 

 

 

single die continuous

 

PD

625

mW

single die measured at t<5 secs

 

 

840

mW

 

 

 

 

 

Storage temperature range

 

Tstg

-55 to +150

C

Junction temperature

 

Tj

150

C

THERMAL RESISTANCE

PARAMETER

SYMBOL

VALUE

UNIT

 

 

 

 

Junction to ambient (a)

R JA

200

°C/W

Junction to ambient (b)

R JA

149

°C/W

Notes

(a)For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.

(b)For a device surface mounted on FR4 PCB measured at t<5secs.

ISSUE 3 - MAY 2006

SEMICONDUCTORS

2

ZLLS1000

TYPICAL CHARACTERISTICS

ISSUE 3 - MAY 2006

3

SEMICONDUCTORS

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