Zetex (Now Diodes) ZC830, ZC830A, ZC830B, ZC831, ZC831A, ZC831B, ZC832, ZC832A, ZC832B, ZC833, ZC833A, ZC833B, ZC834, ZC834A, ZC834B, ZC835, ZC835A, ZC835B, ZC836, ZC836A, ZC836B Schematic [ru]

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SOT23 SILICON VARIABLE

ZC830/A/B

 

CAPACITANCE DIODES

to

 

ZC836/A/B

 

ISSUE 5 – JANUARY 1998

 

 

 

 

 

 

 

FEATURES

*Close Tolerance C-V Characteristics

*High Tuning Ratio

*Low IR

Enabling Excellent Phase Noise Performance (IR Typically <200pA at 25V)

ABSOLUTE MAXIMUM RATINGS.

1

3

2 1

3

SOT23

PARAMETER

SYMBOL

MAX

UNIT

 

 

 

 

Forward Current

IF

200

mA

Power Dissipation at Tamb =25°C

Ptot

330

mW

Operating and Storage Temperature Range

Tj:Tstg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb =25°C)

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

CONDITIONS

 

 

 

 

 

 

 

Reverse Breakdown

VBR

25

 

 

V

IR=10µ A

Voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

Reverse Voltage Leakage

IR

 

0.2

10

nA

VR=20V

Temperature Coefficient

η

 

0.03

0.04

%/°C

VR=3V, f=1MHz

of Capacitance

 

 

 

 

 

 

 

 

 

 

 

 

 

TUNING CHARACTERISTICS (at Tamb =25°C)

 

Nominal Capacitance (pF)

Minimum

Capacitance Ratio

 

 

VR=2V, f=1MHz

 

Q

 

C2 / C20

PART NO

 

 

 

 

@ VR=3V

 

at f=1MHz

 

 

 

 

 

f=50MHz

 

 

 

 

MIN

NOM

 

MAX

MIN

 

MAX

 

 

 

 

 

 

 

 

 

 

 

 

 

ZC830A

9.0

10.0

 

11.0

300

4.5

 

6.0

 

 

 

 

 

 

 

 

 

ZC831A

13.5

15.0

 

16.5

300

4.5

 

6.0

 

 

 

 

 

 

 

 

 

ZC832A

19.8

22.0

 

24.2

200

5.0

 

6.5

 

 

 

 

 

 

 

 

 

ZC833A

29.7

33.0

 

36.3

200

5.0

 

6.5

 

 

 

 

 

 

 

 

 

ZC834A

42.3

47.0

 

51.7

200

5.0

 

6.5

 

 

 

 

 

 

 

 

 

ZC835A

61.2

68.0

 

74.8

100

5.0

 

6.5

 

 

 

 

 

 

 

 

 

ZC836A

90.0

100.0

 

110.0

100

5.0

 

6.5

 

 

 

 

 

 

 

 

 

Note:

 

 

 

 

 

 

 

 

No suffix ± 20% (e.g. ZC830), suffix B ± 5% (e.g. ZC830B)

Spice parameter data is available upon request for this device

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