Zetex (Now Diodes) ZC830, ZC830A, ZC830B, ZC831, ZC831A Schematic [ru]
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SOT23 SILICON VARIABLE |
ZC830/A/B |
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CAPACITANCE DIODES |
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ZC836/A/B |
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ISSUE 5 – JANUARY 1998 |
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FEATURES
*Close Tolerance C-V Characteristics
*High Tuning Ratio
*Low IR
Enabling Excellent Phase Noise Performance (IR Typically <200pA at 25V)
ABSOLUTE MAXIMUM RATINGS.
1
3
2 1
3
SOT23
PARAMETER |
SYMBOL |
MAX |
UNIT |
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Forward Current |
IF |
200 |
mA |
Power Dissipation at Tamb =25°C |
Ptot |
330 |
mW |
Operating and Storage Temperature Range |
Tj:Tstg |
-55 to +150 |
°C |
ELECTRICAL CHARACTERISTICS (at Tamb =25°C)
PARAMETER |
SYMBOL |
MIN |
TYP |
MAX |
UNIT |
CONDITIONS |
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Reverse Breakdown |
VBR |
25 |
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V |
IR=10µ A |
Voltage |
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Reverse Voltage Leakage |
IR |
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0.2 |
10 |
nA |
VR=20V |
Temperature Coefficient |
η |
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0.03 |
0.04 |
%/°C |
VR=3V, f=1MHz |
of Capacitance |
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TUNING CHARACTERISTICS (at Tamb =25°C)
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Nominal Capacitance (pF) |
Minimum |
Capacitance Ratio |
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VR=2V, f=1MHz |
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Q |
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C2 / C20 |
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PART NO |
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@ VR=3V |
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at f=1MHz |
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f=50MHz |
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MIN |
NOM |
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MAX |
MIN |
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MAX |
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ZC830A |
9.0 |
10.0 |
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11.0 |
300 |
4.5 |
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6.0 |
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ZC831A |
13.5 |
15.0 |
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16.5 |
300 |
4.5 |
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6.0 |
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ZC832A |
19.8 |
22.0 |
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24.2 |
200 |
5.0 |
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6.5 |
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ZC833A |
29.7 |
33.0 |
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36.3 |
200 |
5.0 |
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6.5 |
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ZC834A |
42.3 |
47.0 |
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51.7 |
200 |
5.0 |
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6.5 |
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ZC835A |
61.2 |
68.0 |
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74.8 |
100 |
5.0 |
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6.5 |
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ZC836A |
90.0 |
100.0 |
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110.0 |
100 |
5.0 |
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6.5 |
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Note: |
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No suffix ± 20% (e.g. ZC830), suffix B ± 5% (e.g. ZC830B)
Spice parameter data is available upon request for this device
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