Zetex (Now Diodes) FMMV3102 Schematic [ru]
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SOT23 SILICON PLANAR |
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FMMV3102 |
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VARIABLE CAPACITANCE DIODE |
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ISSUE 3 – JANUARY 1998 |
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PIN CONFIGURATION |
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2 |
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1 |
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1 |
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PARTMARKING DETAIL |
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3 |
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FMMV3102 – 4C |
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3 |
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SOT23 |
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ABSOLUTE MAXIMUM RATINGS. |
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PARAMETER |
SYMBOL |
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VALUE |
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UNIT |
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Power Dissipation at Tamb=25°C |
Ptot |
330 |
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mW |
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Operating and Storage Temperature Range |
Tj:Tstg |
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-55 to +150 |
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°C |
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ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER |
SYMBOL |
MIN. |
TYP. |
MAX. |
UNIT |
CONDITIONS. |
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Reverse Breakdown |
VBR |
30 |
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V |
IR = 10μA |
Voltage |
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Reverse current |
IR |
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10 |
nA |
VR = 25V |
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Series Inductance |
LS |
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3.0 |
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nH |
f=250MHz |
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Diode Capacitance |
TCC |
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280 |
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ppm/ °C |
VR = 3V, f=1MHz |
Temperature |
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Coefficient |
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Case Capacitance |
CC |
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0.1 |
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pF |
f=1MHz |
TUNING CHARACTERISTICS (at Tamb = 25°C).
PARAMETER |
SYMBOL |
MIN. |
TYP. |
MAX. |
UNIT |
CONDITIONS. |
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Diode Capacitance |
Cd |
20 |
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25 |
pF |
VR = 3V, f=1MHz |
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Capacitance Ratio |
Cd / Cd |
4.5 |
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VR = 3V/25V, f=1MHz |
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Figure of MERIT |
Q |
200 |
300 |
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VR = 3V, f=50MHz |
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Spice parameter data is available upon request for this device