Zetex (Now Diodes) FMMTL717 Schematic [ru]

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SOT23 PNP SILICON PLANAR HIGH GAIN

 

FMMTL717

MEDIUM POWER TRANSISTOR

 

 

ISSUE 1 – DECEMBER 1997

 

 

 

 

 

 

 

 

 

 

 

 

FEATURES

 

 

 

 

 

 

 

 

 

 

 

 

Very low equivalent on-resistance; RCE(sat)=160mΩ at 1.25A

 

 

 

COMPLEMENTARY TYPE –

FMMTL617

 

 

C

E

 

 

 

PARTMARKING DETAIL –

L77

 

 

 

B

 

 

 

 

 

 

ABSOLUTE MAXIMUM RATINGS.

 

 

 

 

 

 

 

 

PARAMETER

 

 

SYMBOL

 

VALUE

UNIT

 

 

 

 

 

 

Collector-Base Voltage

 

 

VCBO

-12

V

Collector-Emitter Voltage

 

 

VCEO

-12

V

Emitter-Base Voltage

 

 

VEBO

-5

V

Continuous Collector Current

 

 

IC

-1.25

A

Peak Pulse Current

 

 

ICM

-4

A

Base Current

 

 

IB

-200

mA

Power Dissipation at Tamb=25°C

 

Ptot

-500

mW

Operating and Storage Temperature Range

 

Tj:Tstg

-55 to +150

°C

FMMTL717

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

CONDITIONS.

 

 

 

 

 

 

 

Collector-Base

V(BR)CBO

-12

-35

 

V

IC=-100μA

Breakdown Voltage

 

 

 

 

 

 

Collector-Emitter

V(BR)CEO

-12

-25

 

V

IC=-10mA*

Breakdown Voltage

 

 

 

 

 

 

Emitter-Base

V(BR)EBO

-5

-8.5

 

V

IE=-100μA

Breakdown Voltage

 

 

 

 

 

 

Collector Cut-Off Current

ICBO

 

 

-10

nA

VCB=-10V

Emitter Cut-Off Current

IEBO

 

 

-10

nA

VEB=-4V

Collector Cut-Off Current

ICES

 

 

-10

nA

VCE=-10V

Collector-Emitter

VCE(sat)

 

-24

-40

mV

IC=-100mA, IB=-10mA*

Saturation Voltage

 

 

-94

-140

mV

IC=-500mA, IB=-20mA*

 

 

 

-160

-240

mV

IC=-1A, IB=-50mA*

 

 

 

-200

-290

mV

IC=-1.25A,IB=-50mA

Base-Emitter

VBE(sat)

 

-970

-1100

mV

IC=-1.25A, IB=-50mA*

Saturation Voltage

 

 

 

 

 

 

Base-Emitter

VBE(on)

 

-875

-1000

mV

IC=-1.25A, VCE=-2V*

Turn On Voltage

 

 

 

 

 

 

Static Forward

hFE

300

490

 

 

IC=-10mA, VCE=-2V

Current Transfer Ratio

 

300

450

 

 

IC=-100mA, VCE=-2V*

 

 

180

275

 

 

IC=-1A, VCE=-2V*

 

 

100

180

 

 

IC=-2A, VCE=-2V*

 

 

50

110

 

 

IC=-3A, VCE=-2V*

Transition Frequency

fT

 

205

 

MHz

IC=-50mA, VCE=-10V

 

 

 

 

 

 

f=100MHz

Collector-Base

Cobo

 

15

20

pF

VCB=-10V, f=1MHz

Breakdown Voltage

 

 

 

 

 

 

Switching times

ton

 

76

 

ns

IC=-1A, VCC=-10V

 

toff

 

149

 

ns

IB1=IB2=-10mA

*Measured under pulsed conditions. Pulse width=300μs. Duty cycle 2%

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