Zetex (Now Diodes) FMMTL717 Schematic [ru]

SOT23 PNP SILICON PLANAR HIGH GAIN					FMMTL717
MEDIUM POWER TRANSISTOR
ISSUE 1 – DECEMBER 1997
FEATURES
Very low equivalent on-resistance; RCE(sat)=160mΩ at 1.25A
COMPLEMENTARY TYPE –	FMMTL617				C	E
PARTMARKING DETAIL –	L77					B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER			SYMBOL		VALUE	UNIT
Collector-Base Voltage			VCBO	-12		V
Collector-Emitter Voltage			VCEO	-12		V
Emitter-Base Voltage			VEBO	-5		V
Continuous Collector Current			IC	-1.25		A
Peak Pulse Current			ICM	-4		A
Base Current			IB	-200		mA
Power Dissipation at Tamb=25°C			Ptot	-500		mW
Operating and Storage Temperature Range			Tj:Tstg	-55 to +150		°C

FMMTL717

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).

PARAMETER	SYMBOL	MIN.	TYP.	MAX.	UNIT	CONDITIONS.
Collector-Base	V(BR)CBO	-12	-35		V	IC=-100μA
Breakdown Voltage
Collector-Emitter	V(BR)CEO	-12	-25		V	IC=-10mA*
Breakdown Voltage
Emitter-Base	V(BR)EBO	-5	-8.5		V	IE=-100μA
Breakdown Voltage
Collector Cut-Off Current	ICBO			-10	nA	VCB=-10V
Emitter Cut-Off Current	IEBO			-10	nA	VEB=-4V
Collector Cut-Off Current	ICES			-10	nA	VCE=-10V
Collector-Emitter	VCE(sat)		-24	-40	mV	IC=-100mA, IB=-10mA*
Saturation Voltage			-94	-140	mV	IC=-500mA, IB=-20mA*
			-160	-240	mV	IC=-1A, IB=-50mA*
			-200	-290	mV	IC=-1.25A,IB=-50mA
Base-Emitter	VBE(sat)		-970	-1100	mV	IC=-1.25A, IB=-50mA*
Saturation Voltage
Base-Emitter	VBE(on)		-875	-1000	mV	IC=-1.25A, VCE=-2V*
Turn On Voltage
Static Forward	hFE	300	490			IC=-10mA, VCE=-2V
Current Transfer Ratio		300	450			IC=-100mA, VCE=-2V*
		180	275			IC=-1A, VCE=-2V*
		100	180			IC=-2A, VCE=-2V*
		50	110			IC=-3A, VCE=-2V*
Transition Frequency	fT		205		MHz	IC=-50mA, VCE=-10V
						f=100MHz
Collector-Base	Cobo		15	20	pF	VCB=-10V, f=1MHz
Breakdown Voltage
Switching times	ton		76		ns	IC=-1A, VCC=-10V
	toff		149		ns	IB1=IB2=-10mA

*Measured under pulsed conditions. Pulse width=300μs. Duty cycle ≤ 2%