SOT23 NPN SILICON PLANAR |
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SMALL SIGNAL TRANSISTOR |
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FMMTA20 |
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ISSUE 2 – MARCH 1995 |
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PARTMARKING DETAIL – |
FMMTA20 – 1C |
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FMMTA20R – 3C |
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C |
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E |
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COMPLEMENTARY TYPE – |
FMMTA70 |
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B |
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SOT23 |
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ABSOLUTE MAXIMUM RATINGS. |
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PARAMETER |
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SYMBOL |
VALUE |
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UNIT |
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Collector-Emitter Voltage |
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VCEO |
40 |
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V |
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Emitter-Base Voltage |
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VEBO |
4 |
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V |
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Continuous Collector Current |
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IC |
100 |
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mA |
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Power Dissipation at Tamb=25°C |
Ptot |
330 |
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mW |
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Operating and Storage Temperature Range |
Tj:Tstg |
-55 to +150 |
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°C |
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER |
SYMBOL |
MIN. |
MAX. |
UNIT |
CONDITIONS. |
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Collector-Base |
V(BR)CBO |
40 |
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V |
IC=1mA, IE=0 |
Breakdown Voltage |
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Emitter-Base |
V(BR)EBO |
4 |
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V |
IE=100mA, IC=0 |
Breakdown Voltage |
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Collector Cut-Off |
ICBO |
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0.1 |
μA |
VCB=30V, IE=0 |
Current |
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Static Forward |
hFE |
40 |
400 |
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IC=5mA, VCE=10V* |
Current Transfer Ratio |
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Collector-Emitter |
VCE(sat) |
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0.25 |
V |
IC=10mA,IB=1mA |
Saturation Voltage |
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Transition |
fT |
125 |
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MHz |
IC=5mA, VCE=10V |
Frequency |
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f=100MHz |
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Output Capacitance |
Cobo |
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4 |
pF |
VCB=10V, f=140kHz, IE=0 |
*Measured under pulsed conditions. Pulse width=300μs. Duty cycle ≤2% Spice parameter data is available upon request for this device