Zetex (Now Diodes) FMMT717, FMMT718, FMMT720, FMMT722, FMMT723 Schematic [ru]
Loading...
SuperSOT
SOT23 PNP SILICON POWER (SWITCHING) TRANSISTORS
FMMT717 FMMT718 FMMT720 FMMT722 FMMT723
ISSUE 3 JUNE 1996
FEATURES |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
* |
625mW POWER DISSIPATION |
|
|
|
|
|
|
|
|
|
|
|
|
|||||
* |
IC CONT 2.5A |
|
|
|
|
|
|
|
|
|
|
|
|
C |
|
E |
||
* IC Up To 10A Peak Pulse Current |
|
|
|
|
|
|
|
|
|
|
|
|||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
||||||
* Excellent hfe Characteristics Up To 10A (pulsed) |
|
|
|
|
|
|
|
|
|
|
||||||||
* Extremely Low Saturation Voltage E.g. 10mV Typ. |
|
|
|
|
|
|
|
|
|
B |
||||||||
* Exhibits extremely low equivalent on-resistance; RCE(sat) |
|
|
|
|
|
|
|
|
||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||
|
|
|
|
|
|
|
|
|
|
|
|
|
||||||
|
DEVICE TYPE |
|
COMPLEMENT |
|
PARTMARKING |
|
|
|
RCE(sat) |
|
|
|
|
|||||
|
FMMT717 |
|
FMMT617 |
|
|
|
717 |
|
|
72mΩ at 2.5A |
|
|
|
|
||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||
|
FMMT718 |
|
FMMT618 |
|
|
|
718 |
|
|
97mΩ at 1.5A |
|
|
|
|
||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||
|
FMMT720 |
|
FMMT619 |
|
|
|
720 |
|
|
163mΩ at 1.5A |
|
|
|
|
||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
FMMT722 |
|
– |
|
|
|
722 |
|
|
|
- |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
FMMT723 |
|
FMMT624 |
|
|
|
723 |
|
|
|
- |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||
ABSOLUTE MAXIMUM RATINGS |
|
|
|
|
|
|
|
|
|
|
|
|
||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||
|
|
|
|
|
|
|
FMMT |
FMMT |
FMMT |
FMMT |
FMMT |
|
||||||
PARAMETER |
|
SYMBOL |
717 |
|
718 |
|
720 |
|
|
722 |
723 |
UNIT |
||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
Collector-Base Voltage |
VCBO |
|
-12 |
|
-20 |
|
-40 |
|
|
-70 |
-100 |
V |
||||||
Collector-Emitter Voltage |
VCEO |
|
-12 |
|
-20 |
|
-40 |
|
|
-70 |
-100 |
V |
||||||
Emitter-Base Voltage |
|
VEBO |
|
-5 |
|
-5 |
|
-5 |
|
|
-5 |
-5 |
V |
|||||
Peak Pulse Current** |
|
ICM |
|
-10 |
|
-6 |
|
-4 |
|
|
-3 |
-2.5 |
A |
|||||
Continuous Collector Current |
IC |
|
-2.5 |
|
-1.5 |
|
-1.5 |
|
|
-1.5 |
-1 |
A |
||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Base Current |
|
IB |
|
|
|
|
|
-500 |
|
|
|
|
|
mA |
||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||
Power Dissipation at Tamb=25°C* |
Ptot |
|
|
|
|
|
625 |
|
|
|
|
|
mW |
|||||
Operating and Storage |
Tj:Tstg |
|
|
|
|
-55 to +150 |
|
|
|
°C |
||||||||
Temperature Range |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
*Maximum power dissipation is calculated assuming that the device is mounted on a ceramic substrate measuring 15x15x0.6mm
**Measured under pulsed conditions. Pulse width=300μs. Duty cycle ≤ 2% Spice parameter data is available upon request for these devices
3 - 159
FMMT717
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER |
SYMBOL |
MIN. |
TYP. |
MAX. |
UNIT |
CONDITIONS. |
|
|
|
|
|
|
|
Collector-Base |
V(BR)CBO |
-12 |
-35 |
|
V |
IC=-100μA |
Breakdown Voltage |
|
|
|
|
|
|
Collector-Emitter |
V(BR)CEO |
-12 |
-25 |
|
V |
IC=-10mA* |
Breakdown Voltage |
|
|
|
|
|
|
|
|
|
|
|
|
|
Emitter-Base |
V(BR)EBO |
-5 |
-8.5 |
|
V |
IE=-100μA |
Breakdown Voltage |
|
|
|
|
|
|
Collector Cut-Off |
ICBO |
|
|
-100 |
nA |
VCB=-10V |
Current |
|
|
|
|
|
|
|
|
|
|
|
|
|
Emitter Cut-Off Current |
IEBO |
|
|
-100 |
nA |
VEB=-4V |
Collector Emitter |
ICES |
|
|
-100 |
nA |
VC ES=-10V |
Cut-Off Current |
|
|
|
|
|
|
|
|
|
|
|
|
|
Collector-Emitter |
VCE(sat) |
|
-10 |
-17 |
mV |
IC=-0.1A, IB=-10mA* |
Saturation Voltage |
|
|
-100 |
-140 |
mV |
IC=-1A, IB=-10mA* |
|
|
|
-110 |
-170 |
mV |
IC=-1.5A, IB=-50mA* |
|
|
|
-180 |
-220 |
mV |
IC=-2.5A, IB=-50mA* |
Base-Emitter |
VBE(sat) |
|
-0.9 |
-1.0 |
V |
IC=-2.5A, IB=-50mA* |
Saturation Voltage |
|
|
|
|
|
|
|
|
|
|
|
|
|
Base-Emitter Turn-On |
VBE(on) |
|
-0.8 |
-1.0 |
V |
IC=-2.5A, VCE=-2V* |
Voltage |
|
|
|
|
|
|
|
|
|
|
|
|
|
Static Forward Current |
hFE |
300 |
475 |
|
|
IC=-10mA, VCE=-2V* |
Transfer |
|
300 |
450 |
|
|
IC=-100mA, VCE=-2V* |
Ratio |
|
180 |
275 |
|
|
IC=-2.5A, VCE=-2V* |
|
|
60 |
100 |
|
|
IC=-8A, VCE=-2V* |
|
|
45 |
70 |
|
|
IC=-10A, VCE=-2V* |
Transition |
fT |
80 |
110 |
|
MHz |
IC=-50mA, VCE=-10V |
Frequency |
|
|
|
|
|
f=100MHz |
Output Capacitance |
Cobo |
|
21 |
30 |
pF |
VCB=-10V, f=1MHz |
Turn-On Time |
t(on) |
|
70 |
|
ns |
VCC=-6V, IC=-2A |
Turn-Off Time |
t(off) |
|
130 |
|
ns |
IB1=IB2=50mA |
|
|
|
*Measured under pulsed conditions. Pulse width=300μs. Duty cycle ≤ 2%
3 - 160