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FMMT596
SOT 23 PNP silicon planar high voltage transistor
Ordering information
Device |
Reel size |
Tape width |
Quantity |
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(inches |
(mm) |
per reel |
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FMMT596TA |
7 |
8 |
3,000 |
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Device marking |
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C |
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596 |
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B |
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E |
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Absolute maximum ratings |
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E
C
B Pinout - top view
Parameter |
Symbol |
Value |
Unit |
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Collector-base voltage |
VCBO |
-220 |
V |
Collector-emitter voltage |
VCEO |
-200 |
V |
Emitter-base voltage |
VEBO |
-5 |
V |
Peak pulse current |
ICM |
-1 |
A |
Continuous collector current |
IC |
-0.3 |
A |
Base current |
IB |
-200 |
mA |
Power dissipation at Tamb=25°C |
Ptot |
500 |
mW |
Operating and storage temperature range |
Tj:Tstg |
-55 to +150 |
°C |
Issue 4 - July 2007 |
1 |
www.zetex.com |
© Zetex Semiconductors plc 2007
FMMT596
Electrical characteristics (Tamb = 25°C)
Parameter |
Symbol |
Min. |
Typ. |
Max. |
Unit |
Conditions |
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Collector-base breakdown |
V(BR)CBO |
-220 |
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V |
IC=-100 A |
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voltage |
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Collector-emitter breakdown |
V(BR)CEO |
-200 |
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V |
I =-10mA (*) |
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voltage |
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C |
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Emitter-base breakdown |
V(BR)EBO |
-5 |
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V |
IE=-100 A |
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voltage |
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Collector cut-off current |
ICBO |
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-100 |
nA |
VCB=-200V |
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Emitter cut-off current |
IEBO |
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-100 |
nA |
VEB=-4V |
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Collector-emitter cut-off |
ICES |
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-100 |
nA |
VCES=-200V |
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current |
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Collector-emitter saturation |
VCE(sat) |
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-0.2 |
V |
IC=-100mA, IB=-10mA, |
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voltage |
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-0.35 |
V |
IB=-250mA, |
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I |
=-25mA(*) |
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B |
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Base-emitter saturation |
VBE(sat) |
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-1.0 |
V |
I |
=-250mA, I =-25mA(*) |
voltage |
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C |
B |
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Base-emitter turn-on voltage |
VBE(on) |
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-0.9 |
V |
IC=-250mA, |
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V |
=-10V(*) |
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CE |
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Static forward current |
hFE |
100 |
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IC=-1mA, VCE=-10V |
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transfer ratio |
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100 |
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IC=-100mA, VCE=-10V(*) |
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85 |
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300 |
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IC=-250mA, VCE=-10V(*) |
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35 |
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IC=-400mA, VCE=-10V(*) |
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Transition frequency |
fT |
150 |
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MHz |
IC=-50mA, VCE=-10V, |
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f=100MHz |
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Output capacitance |
Cobo |
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10 |
pF |
VCB=-10V, f=1MHz |
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Switching times |
td |
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22 |
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ns |
IC=-200mA, VCC=-80V |
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tr |
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19 |
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Ib1=Ib2=-20mA |
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ts |
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472 |
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tf |
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70 |
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Switching times |
td |
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44 |
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ns |
IC=-100mA, VCC=-80V |
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tr |
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31 |
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Ib1=Ib2=-10mA |
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ts |
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665 |
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tf |
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76 |
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NOTES:
(*) Measured under pulsed conditions. Pulse width = 300 s. Duty cycle 2%.
Issue 4 - July 2007 |
2 |
www.zetex.com |
© Zetex Semiconductors plc 2007
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FMMT596 |
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Typucal characteristics |
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0.4 |
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0.4 |
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+25°C |
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IC/IB=10 |
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(V) |
0.3 |
IC/IB=10 |
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(V) |
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0.3 |
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-55°C |
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IC/IB=50 |
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+25°C |
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- |
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- |
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+100°C |
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CE(sat) |
0.2 |
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CE(sat) |
0.2 |
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V |
0.1 |
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V |
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0.1 |
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0 |
10mA |
100mA |
1A |
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0 |
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10mA |
100mA |
1mA |
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1mA |
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1mA |
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IC-collector current |
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IC-collector current |
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VCE(sat) v IC |
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VCE(sat) v IC |
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320 |
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VCE=10V |
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1.0 |
IC/IB=10 |
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+100°C |
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gain |
240 |
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(V)- |
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0.8 |
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0.6 |
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typical- |
+25°C |
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BE(sat) |
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-55°C |
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+100°C |
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160 |
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-55°C |
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0.4 |
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+25°C |
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FE |
80 |
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V |
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0.2 |
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h |
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0 |
10mA |
100mA |
1A |
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0 |
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10mA |
100mA |
1mA |
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1mA |
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1mA |
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IC-collector current |
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IC-collector current |
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hFE v IC |
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VBE(sat) v IC |
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1.0 VCE=10V |
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(A) |
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1 |
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BE(on) |
0.4 |
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current |
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(V)- |
0.8 |
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0.1 |
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0.6 |
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V |
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collector- |
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0.2 |
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+100°C |
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DC |
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-55°C |
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0.01 |
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1s |
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100ms |
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+25°C |
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1ms |
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100 s |
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C |
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I |
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0 |
10mA |
100mA |
1A |
0.001 |
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1V |
10V |
100V |
1000V |
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1mA |
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0.1V |
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IC-collector current |
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VCE-collector emitter voltage (V) |
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VBE(on) v IC |
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Safe operating area |
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Issue 4 - July 2007 |
3 |
www.zetex.com |
© Zetex Semiconductors plc 2007