SOT23 PNP SILICON PLANAR |
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HIGH VOLTAGE TRANSISTOR |
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FMMT593 |
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ISSUE 3 - NOVEMBER 1995 |
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COMPLEMENTARY TYPE FMMT493 |
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PARTMARKING DETAIL - 593 |
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C |
E |
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B |
ABSOLUTE MAXIMUM RATINGS. |
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PARAMETER |
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SYMBOL |
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VALUE |
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UNIT |
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Collector-Base Voltage |
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VCBO |
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-120 |
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V |
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Collector-Emitter Voltage |
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VCEO |
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-100 |
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V |
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Emitter-Base Voltage |
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VEBO |
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-5 |
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V |
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Peak Pulse Current |
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ICM |
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-2 |
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A |
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Continuous Collector Current |
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IC |
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-1 |
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A |
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Base Current |
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IB |
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-200 |
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mA |
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Power Dissipation at Tamb=25°C |
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Ptot |
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500 |
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mW |
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Operating and Storage Temperature Range |
Tj:Tstg |
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-55 to +150 |
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°C |
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ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). |
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PARAMETER |
SYMBOL |
MIN. |
MAX. |
UNITCONDITIONS. |
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Collector-Base Breakdown Voltage |
V(BR)CBO |
-120 |
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V |
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IC=-100μA |
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Collector-Emitter Breakdown Voltage |
V(BR)CEO |
-100 |
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V |
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IC=-10mA* |
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Emitter-Base Breakdown Voltage |
V(BR)EBO |
-5 |
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V |
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IE=-100μA |
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Collector Cut-Off Current |
ICBO |
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-100 |
nA |
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VCB=-100V |
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Emitter Cut-Off Current |
IEBO |
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-100 |
nA |
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VEB=-4V |
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Collector-Emitter Cut-Off Current |
ICES |
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-100 |
nA |
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VCES=-100V |
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Emitter Saturation |
VCE(sat) |
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-0.2 |
V |
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IC=-250mA,IB=-25mA* |
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Voltages |
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-0.3 |
V |
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IC=-500mA IB=-50mA* |
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VBE(sat) |
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-1.1 |
V |
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IC=-500mA,IB=-50mA* |
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Base-Emitter Turn-on Voltage |
VBE(on) |
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-1.0 |
V |
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IC=-1mA, VCE=-5V* |
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Static Forward Current Transfer Ratio |
hFE |
100 |
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IC=-1mA, VCE=-5V |
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100 |
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IC=-250mA,VCE=-5V* |
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100 |
300 |
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IC=-500mA, VCE=-5V* |
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50 |
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IC=-1A, VCE=-5V, |
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Transition Frequency |
fT |
50 |
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MHz IC=-50mA, VCE=-10V |
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f=100MHz |
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Output Capacitance |
Cobo |
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5 |
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pF |
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VCB=-10V, f=1MHz |
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*Measured under pulsed conditions. Pulse width=300μs. Duty cycle ≤ 2% |
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3 - 141