Zetex (Now Diodes) FMMT593 Schematic [ru]

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SOT23 PNP SILICON PLANAR

 

 

 

 

 

 

 

 

 

HIGH VOLTAGE TRANSISTOR

 

 

 

 

 

FMMT593

ISSUE 3 - NOVEMBER 1995

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

COMPLEMENTARY TYPE FMMT493

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PARTMARKING DETAIL - 593

 

 

 

 

 

 

 

 

C

E

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

B

ABSOLUTE MAXIMUM RATINGS.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PARAMETER

 

SYMBOL

 

 

 

VALUE

 

UNIT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector-Base Voltage

 

VCBO

 

 

 

 

-120

 

V

 

Collector-Emitter Voltage

 

VCEO

 

 

 

 

-100

 

V

 

Emitter-Base Voltage

 

VEBO

 

 

 

 

-5

 

V

 

Peak Pulse Current

 

ICM

 

 

 

 

 

-2

 

A

 

Continuous Collector Current

 

IC

 

 

 

 

 

-1

 

A

 

Base Current

 

IB

 

 

 

 

 

-200

 

mA

 

Power Dissipation at Tamb=25°C

 

Ptot

 

 

 

 

 

500

 

mW

 

Operating and Storage Temperature Range

Tj:Tstg

 

 

-55 to +150

 

°C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).

 

 

 

 

 

 

 

 

 

PARAMETER

SYMBOL

MIN.

MAX.

UNITCONDITIONS.

 

 

 

 

 

 

 

 

 

 

 

 

Collector-Base Breakdown Voltage

V(BR)CBO

-120

 

 

V

 

IC=-100μA

 

 

Collector-Emitter Breakdown Voltage

V(BR)CEO

-100

 

 

V

 

IC=-10mA*

 

 

Emitter-Base Breakdown Voltage

V(BR)EBO

-5

 

 

V

 

IE=-100μA

 

 

Collector Cut-Off Current

ICBO

 

-100

nA

 

VCB=-100V

 

 

Emitter Cut-Off Current

IEBO

 

-100

nA

 

VEB=-4V

 

 

Collector-Emitter Cut-Off Current

ICES

 

-100

nA

 

VCES=-100V

 

 

Emitter Saturation

VCE(sat)

 

-0.2

V

 

IC=-250mA,IB=-25mA*

 

Voltages

 

 

 

-0.3

V

 

IC=-500mA IB=-50mA*

 

 

VBE(sat)

 

-1.1

V

 

IC=-500mA,IB=-50mA*

 

 

 

 

 

 

 

 

 

 

Base-Emitter Turn-on Voltage

VBE(on)

 

-1.0

V

 

IC=-1mA, VCE=-5V*

 

Static Forward Current Transfer Ratio

hFE

100

 

 

 

 

 

IC=-1mA, VCE=-5V

 

 

 

 

100

 

 

 

 

 

IC=-250mA,VCE=-5V*

 

 

 

 

100

300

 

 

 

 

IC=-500mA, VCE=-5V*

 

 

 

 

50

 

 

 

 

 

IC=-1A, VCE=-5V,

 

Transition Frequency

fT

50

 

 

MHz IC=-50mA, VCE=-10V

 

 

 

 

 

 

 

 

 

 

f=100MHz

 

 

 

 

 

 

 

 

 

 

 

 

Output Capacitance

Cobo

 

5

 

pF

 

VCB=-10V, f=1MHz

*Measured under pulsed conditions. Pulse width=300μs. Duty cycle 2%

 

 

 

 

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