Zetex (Now Diodes) FMMT549, FMMT549A Schematic [ru]

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SOT23 PNP SILICON PLANAR

 

 

 

 

 

FMMT549

MEDIUM POWER TRANSISTORS

 

 

 

FMMT549A

ISSUE 3 - OCTOBER 1995

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

FEATURES

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

* Low equivalent on-resistance; RCE(sat) 250mΩ at 1A

 

 

 

 

 

 

 

* 1 Amp continuous current

 

 

 

 

 

 

 

 

 

C

E

COMPLEMENTARY TYPES – FMMT549

 

- FMMT449

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

FMMT549A

- N/A

 

 

 

 

 

 

 

PARTMARKING DETAIL –

FMMT549

 

- 549

 

 

 

 

 

 

B

 

 

 

FMMT549A

- 59A

 

 

 

 

 

 

 

ABSOLUTE MAXIMUM RATINGS.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PARAMETER

 

 

 

SYMBOL

VALUE

 

UNIT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector-Base Voltage

 

 

 

VCBO

 

 

 

-35

 

V

Collector-Emitter Voltage

 

 

 

VCEO

 

 

 

-30

 

V

Emitter-Base Voltage

 

 

 

VEBO

 

 

 

-5

 

V

Peak Pulse Current

 

 

 

ICM

 

 

 

-2

 

A

Continuous Collector Current

 

 

 

IC

 

 

 

-1

 

A

Base Current

 

 

 

IB

 

 

 

-200

 

mA

Power Dissipation: at Tamb=25°C

 

 

Ptot

 

 

 

500

 

mW

Operating and Storage Temperature Range

 

Tj:Tstg

 

-55 to +150

 

°C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

 

SYMBOL

MIN.

 

TYP.

MAX.

UNIT

 

CONDITIONS.

 

 

 

 

 

 

 

 

 

 

 

 

 

Breakdown Voltages

 

V(BR)CBO

-35

 

 

 

V

 

IC=-100μA

 

 

 

 

V(BR)CEO

-30

 

 

 

V

 

IC=-10mA*

 

 

 

 

V(BR)EBO

-5

 

 

 

 

V

 

IE=-100μA

 

Cut-Off Currents

 

ICBO

 

 

 

 

-0.1

μA

 

VCB=-30V

 

 

 

 

 

 

 

 

 

-10

μA

 

VCB=-30V, Tamb=100°C

 

 

 

IEBO

 

 

 

 

-0.1

μA

 

VEB=-4V

 

Saturation Voltages

 

VCE(sat)

 

 

 

-0.25

-0.50

V

 

IC=-1A, IB=-100mA*

 

 

 

 

 

 

 

-0.50

-0.75

V

 

IC=-2A, IB=-200mA*

 

FMMT549A

 

 

 

 

 

 

-0.30

V

 

IC=-100mA, IB=-1mA*

 

 

 

VBE(sat)

 

 

 

-0.9

-1.25

V

 

IC=-1A, IB=-100mA*

Base Emitter Turn-on Voltage

 

VBE(on)

 

 

 

-0.85

-1

V

 

IC=-1A, VCE=-2V*

Static Forward Current

 

hFE

70

 

200

 

 

 

 

IC=-50mA, VCE=-2V*

Transfer Ratio

 

 

80

 

130

 

 

 

 

IC=-1A, VCE=-2V*

 

 

 

 

40

 

80

 

 

 

 

IC=-2A, VCE=-2V*

 

FMMT549

 

 

100

 

160

300

 

 

 

IC=-500mA, VCE=-2V*

 

FMMT549A

 

 

150

 

200

500

 

 

 

IC=-500mA, VCE=-2V*

Transition Frequency

 

fT

100

 

 

 

MHz

 

IC=-100mA, VCE=-5V

 

 

 

 

 

 

 

 

 

 

 

 

f=100MHz

 

Output Capacitance

 

Cobo

 

 

 

 

25

pF

 

VCB=-10V, f=1MHz

Switching Times

 

ton

 

 

 

50

 

ns

 

IC=-500mA, VCC=-10V

 

 

 

toff

 

 

 

300

 

ns

 

IB1=IB2=-50mA

*Measured under pulsed conditions. Pulse width=300μs. Duty cycle 2% 3 - 127

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