Zetex (Now Diodes) FMMT459 Schematic [ru]

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FMMT459

500V Silicon NPN high voltage switching transistor

Summary

V(BR)CEV > 500V

V(BR)ECV > 6V

Ic(cont) = 150 mA

Vce(sat) = 70 mV @ 50 mA

Description

This new high voltage transistor provides users with very efficient performance, combining low

VCE(SAT) high Hfe to give extremely low on state losses at 500V operation, making it ideal for use in high efficiency Telecom and protected line switching applications.

Features

6V reverse blocking capability

Low saturation voltage - 90mV @ 50mA

Hfe 50 @ 30 mA

IC=150mA continuous

SOT23 package with Ptot 625mW

Specification can be supplied in other package outlines

Applications

Electronic test equipment

Offline switching circuits

■ Piezo actuators

■ RCD circuits

Ordering information

 

 

Pin out - top view

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Device

Reel size

Tape width

Quantity

 

 

 

 

 

 

 

 

 

 

 

(inches)

(mm)

per reel

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

FMMT459TA

7

8

3,000

 

 

 

 

 

 

 

 

 

 

 

 

 

 

FMMT459TC

13

8

10,000

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Device marking

459

Issue 5 - August 2005

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© Zetex Semiconductors plc 2005

FMMT459

Absolute maximum ratings

Parameter

 

Symbol

Limit

Unit

 

 

 

 

 

Collector-base voltage

 

VCBO

500

V

Collector-emitter voltage

VCEV

500

V

Collector-emitter voltage

VCEO

450

V

Emitter-base voltage

 

VEBO

6

V

Emitter-collector voltage

VECV

6

V

Peak pulse current

 

ICM

0.5

A

Continuous collector current*

IC

0.15

A

Base current

 

IB

0.2

A

 

 

 

 

 

Power dissipation @ T

=25°C*

PD

625

mW

A

 

 

5

mW/°C

Linear derating factor

 

 

 

 

 

 

 

 

 

 

 

Power dissipation @ T

=25°C

PD

806

mW

A

 

 

6.4

mW/°C

Linear derating factor

 

 

 

 

 

 

 

 

 

 

Operating and storage temperature range

Tj:Tstg

-55 to

°C

 

 

 

+150

 

 

 

 

 

 

Thermal resistance

Parameter

Symbol

Value

Unit

 

 

 

 

Junction to ambient*

R JA

200

°C/W

Junction to ambient

R JA

155

°C/W

NOTES:

* For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of 1oz copper, in still air conditions

† as above measured at t<5secs.

Issue 5 - August 2005

2

www.zetex.com

© Zetex Semiconductors plc 2005

FMMT459

Thermal characteristics

 

1

 

(A)

 

 

Current

100m

 

 

 

 

 

DC

Collector

 

1s

 

100µs

 

10m

100ms

 

10ms

 

 

1ms

 

 

 

Single Pulse

T

 

 

 

=25°C

 

 

 

 

 

 

C

1m

 

 

amb

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

I

 

 

1

10

100

 

100m

VCE Collector-Emitter Voltage (V)

Safe Operating Area

(W)

0.7

 

 

 

 

 

 

 

 

0.6

 

 

 

 

 

 

 

 

Dissipation

0.5

 

 

 

 

 

 

 

 

0.4

 

 

 

 

 

 

 

 

0.3

 

 

 

 

 

 

 

 

Power

0.2

 

 

 

 

 

 

 

 

0.1

 

 

 

 

 

 

 

 

Max

0.0

 

 

 

 

 

 

 

 

0

20

40

60

80

100

120

140

160

 

Temperature (°C)

Derating Curve

(°C/W)

200

 

 

 

 

 

 

 

150

 

 

 

 

 

 

 

Resistance

 

 

 

 

 

 

 

D=0.5

 

 

 

 

 

 

100

 

 

 

 

 

 

 

50

D=0.2

 

 

 

Single Pulse

 

Thermal

 

 

 

D=0.05

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0

 

 

 

D=0.1

 

 

1m

10m

100m

1

10

100

1k

100µ

Pulse Width (s)

Transient Thermal Impedance

Issue 5 - August 2005

3

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© Zetex Semiconductors plc 2005

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