Zetex (Now Diodes) FMMT4400, FMMT4401 Schematic [ru]
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SOT23 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS
ISSUE 4 – FEBRUARY 1997 |
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FMMT4400
FMMT4401
PARTMARKING DETAILS: FMMT4400 - 1KZ |
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C |
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FMMT4401 - 1L |
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B |
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ABSOLUTE MAXIMUM RATINGS. |
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PARAMETER |
SYMBOL |
VALUE |
UNIT |
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Collector-Base Voltage |
VCBO |
60 |
V |
Collector-Emitter Voltage |
VCEO |
40 |
V |
Emitter-Base Voltage |
VEBO |
6 |
V |
Continuous Collector Current |
IC |
600 |
mA |
Power Dissipation at Tamb=25°C |
Ptot |
330 |
mW |
Operating and Storage Temperature Range |
Tj:Tstg |
-55 to +150 |
°C |
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
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FMMT4400 |
FMMT4401 |
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PARAMETER |
SYMBOL |
MIN. |
MAX. |
MIN. |
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MAX. |
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UNIT |
CONDITIONS |
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Collector-Emitter |
V(BR)CEO |
40 |
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40 |
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V |
IC=1mA, IB=0 |
Breakdown Voltage |
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Collector-Base |
V(BR)CBO |
60 |
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60 |
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V |
IC=0.1mA, IE=0 |
Breakdown Voltage |
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Emitter-Base |
V(BR)EBO |
6 |
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6 |
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V |
IE=0.1mA, IC=0 |
Breakdown Current |
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Collector-Emitter |
ICEX |
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0.1 |
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0.1 |
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μA |
VCE=35V |
Cut-Off Current |
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VEB(off) =0.4V |
Base Cut-Off |
IBEX |
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0.1 |
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0.1 |
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μA |
VCE=35V |
Current |
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VEB(off) =3V |
Static Forward |
hFE |
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20 |
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IC=0.1mA, VCE=1V |
Current |
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20 |
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40 |
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IC=1mA, VCE=1V |
TransferRatio |
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40 |
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80 |
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IC=10mA, VCE=1V |
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50 |
150 |
100 |
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300 |
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IC=150mA, VCE=1V* |
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20 |
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40 |
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IC=500mA, VCE=2V* |
Collector-Emitter |
VCE(sat) |
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0.4 |
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0.4 |
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V |
IC=150mA,IB=15mA* |
Saturation Voltage |
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0.75 |
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0.75 |
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V |
IC=500mA,IB=50mA* |
Base-Emitter |
VBE(sat) |
0.75 |
0.95 |
0.75 |
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0.95 |
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V |
IC=150mA,IB=15mA* |
Saturation Voltage |
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1.2 |
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1.2 |
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V |
IC=500mA,IB=50mA* |
Transition |
fT |
200 |
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250 |
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MHz |
IC=20mA,VCE=10V |
Frequency |
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f=100kHz |
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Output Capacitance |
Cobo |
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6.5 |
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6.5 |
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pF |
VCB=5 V,IE=0 |
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f=100kHz |
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Input Capacitance |
Cibo |
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30 |
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30 |
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pF |
VBE=0.5V, IC=0 |
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f=100kHz |
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*Measured under pulsed conditions. Pulse width=300μs. Duty cycle ≤ 2% |
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