SOT23 SILICON PLANAR HIGH SPEED |
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SWITCHING DIODE |
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FMMD6050 |
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ISSUE 2 - OCTOBER 1995 |
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DIODE PIN CONNECTION |
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PARTMARKING DETAIL – 5A |
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1 |
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2 |
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3 |
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! |
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SOT23 |
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ABSOLUTE MAXIMUM RATINGS. |
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PARAMETER |
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SYMBOL |
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VALUE |
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UNIT |
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Breakdown Voltage Voltage (IR=100μA) |
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V(BR) |
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70 |
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V |
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Peak Forward Current |
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IF |
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200 |
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mA |
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Peak Forward Surge Current |
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IFM |
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500 |
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mA |
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Power Dissipation at Tamb = 25°C |
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Ptot |
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330 |
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mW |
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Operating and Storage Temperature Range |
Tj:Tstg |
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-55 to +150 |
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°C |
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ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). |
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PARAMETER |
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SYMBOL |
MIN. |
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MAX. |
UNIT |
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CONDITIONS. |
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Breakdown Voltage |
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V(BR) |
70 |
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V |
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IR=10μA |
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Forward Voltage |
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VF |
0.5 |
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0.7 |
V |
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IF=1mA |
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0.8 |
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1.1 |
V |
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IF=100mA |
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Reverse Current |
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IR |
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0.1 |
μA |
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VR=50V |
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Recovery Time* |
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trr |
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5 |
ns |
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IF= IR=10mA, |
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IR(REC)=1 mA |
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Diode Capacitance |
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Cd |
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2.5 |
pF |
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VR=0, f=1MHz |
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*For switching test circuit diagram see FMMD7000 datasheet |
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PAGE NUMBER