Zetex (Now Diodes) BF620 Schematic [ru]

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SOT89 NPN SILICON PLANAR

 

BF620

 

HIGH VOLTAGE TRANSISTOR

 

 

ISSUE 5 – MARCH 2001

 

 

 

 

 

 

 

 

 

FEATURES

*High breakdown and low saturation voltages APPLICATIONS

*Suitable for video output stages in TV sets

*Switching power supplies COMPLEMENTARY TYPE: BF621

PARTMARKING DETAIL –

DC

ABSOLUTE MAXIMUM RATINGS.

C

E

C

B

SOT89

PARAMETER

SYMBOL

VALUE

UNIT

 

 

 

 

Collector-Base Voltage

VCBO

300

V

Collector-Emitter Voltage

VCEO

300

V

Emitter-Base Voltage

VEBO

5

V

Peak Pulse Current

ICM

100

mA

Continuous Collector Current

IC

50

mA

Power Dissipation at Tamb=25°C

Ptot

1

W

Operating and Storage Temperature Range

Tj:Tstg

-65 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL

MIN.

MAX.

UNIT

CONDITIONS.

 

 

 

 

 

 

Collector-Base

V(BR)CBO

300

 

V

IC=10µ A, IE=0

Breakdown Voltage

 

 

 

 

 

 

 

 

 

 

 

Collector-Emitter

V(BR)CEO

300

 

V

IC=1mA, IB=0*

Breakdown Voltage

 

 

 

 

 

Emitter-Base Breakdown

V(BR)EBO

5

 

V

IE=100µ A, IC=0

Voltage

 

 

 

 

 

Collector Cut-Off Current

ICBO

 

10

nA

VCB=200V, IE=0

 

 

 

20

µ A

VCB=200V, IE=0 †

Colector Cut-Off Current

ICER

 

50

nA

VCE=200V, RBE=2.7KΩ

 

 

 

10

µ A

VCE=200V, RBE=2.7KΩ †

Emitter Cut-Off Current

IEBO

 

10

µ A

VEB=5V, IC=0

Collector-Emitter

VCE(sat)

 

0.6

V

IC=30mA, IB=5mA*

Saturation Voltage

 

 

 

 

 

Base-Emitter

VBE(sat)

 

0.9

V

IC=20mA, IB=2mA*

Saturation Voltage

 

 

 

 

 

 

 

 

 

 

 

Static Forward

hFE

50

 

 

IC=25mA, VCE=20V*

Current Transfer Ratio

 

 

 

 

 

 

 

 

 

 

 

Transition Frequency

fT

100 Typical

MHz

IC=10mA, VCE=10V

 

 

 

 

 

f=100MHz

Output Capacitance

Cobo

0.8 Typical

pF

VCB=30V, f=1MHz

†Tamb=150°C

*Measured under pulsed conditions.

For typical characteristics graphs see FMMTA42 datasheet.

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