Zetex (Now Diodes) BCX51, BCX51-10, BCX51-16, BCX52, BCX52-10, BCX52-16, BCX53, BCX53-10, BCX53-16 Schematic [ru]

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SOT89 PNP SILICON PLANAR

BCX51

MEDIUM POWER TRANSISTORS

BCX52

BCX53

ISSUE 3 – FEBRUARY 1996

 

 

 

 

 

 

COMPLEMENTARY TYPE –

BCX51 – BCX54

 

 

BCX52 – BCX55

 

 

BCX53 – BCX56

PARTMARKING DETAILS –

 

 

BCX51 – AA

BCX52

– AE

BCX53 – AH

BCX51-10 – AC

BCX52-10 – AG

BCX53-10 – AK

BCX51-16 – AD

BCX52-16 – AM

BCX53-16 – AL

ABSOLUTE MAXIMUM RATINGS.

C

E

C

B

SOT89

PARAMETER

SYMBOL

BCX51

BCX52

 

BCX53

UNIT

 

 

 

 

 

 

 

Collector-Base Voltage

VCBO

-45

-60

 

-100

V

Collector-Emitter Voltage

VCEO

-45

-60

 

-80

V

Emitter-Base Voltage

VEBO

 

-5

 

 

V

Peak Pulse Current

ICM

 

-1.5

 

 

A

Continuous Collector Current

IC

 

-1

 

 

A

Power Dissipation at Tamb=25°C

Ptot

 

1

 

 

W

Operating and Storage Temperature Range

Tj:Tstg

 

-65 to +150

 

°C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

 

SYMBOL

MIN.

TYP.

MAX.

UNIT

CONDITIONS.

 

 

 

 

 

 

 

 

Collector-Base

BCX53

V(BR)CBO

-100

 

 

V

IC =-100μA

Breakdown

BCX52

 

-60

 

 

V

IC =-100μA

Voltage

BCX51

 

-45

 

 

V

IC =-100μA

Collector-Emitter BCX53

V(BR)CEO

-80

 

 

V

IC =-10mA*

Breakdown

BCX52

 

-60

 

 

 

IC =-10mA*

Voltage

BCX51

 

-45

 

 

 

IC =-10mA*

Emitter-Base

 

V(BR)EBO

-5

 

 

V

IE =-10μA

Breakdown Voltage

 

 

 

 

 

 

Collector Cut-Off Current

ICBO

 

 

-0.1

μA

VCB =-30V

 

 

 

 

 

-20

μA

VCB =-30V, Tamb =150°C

Emitter Cut-Off Current

IEBO

 

 

-20

nA

VEB =-4V

Collector-Emitter

 

VCE(sat)

 

 

-0.5

V

IC =-500mA, IB =-50mA*

Saturation Voltage

 

 

 

 

 

 

Base-Emitter

 

VBE(on)

 

 

-1.0

V

IC =-500mA, VCE =-2V*

Turn-On Voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Static Forward Current

hFE

25

 

 

 

IC =-5mA, VCE =-2V*

Transfer Ratio

 

 

40

 

250

 

IC =-150mA, VCE =-2V*

 

 

-10

25

 

 

 

IC =-500mA, VCE =-2V*

 

 

63

 

160

 

IC =-150mA, VCE =-2V*

 

 

-16

100

 

250

 

IC =-150mA, VCE =-2V*

Transition Frequency

fT

150

 

 

MHz

IC =-50mA, VCE =-10V,

 

 

 

 

 

 

 

f=100MHz

 

 

 

 

 

 

 

Output Capacitance

Cobo

 

 

25

pF

VCB =-10V, f=1MHz

*Measured under pulsed conditions. Pulse width=300μs. Duty cycle 2%

 

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