Zetex (Now Diodes) BCX51, BCX51-10, BCX51-16, BCX52, BCX52-10, BCX52-16, BCX53, BCX53-10, BCX53-16 Schematic [ru]

	SOT89 PNP SILICON PLANAR			BCX51
	MEDIUM POWER TRANSISTORS			BCX52
				BCX53
	ISSUE 3 – FEBRUARY 1996

COMPLEMENTARY TYPE –		BCX51 – BCX54
		BCX52 – BCX55
		BCX53 – BCX56
PARTMARKING DETAILS –
BCX51 – AA	BCX52	– AE	BCX53 – AH
BCX51-10 – AC	BCX52-10 – AG		BCX53-10 – AK
BCX51-16 – AD	BCX52-16 – AM		BCX53-16 – AL

ABSOLUTE MAXIMUM RATINGS.

C

E

C

B

SOT89

PARAMETER	SYMBOL	BCX51	BCX52		BCX53	UNIT
Collector-Base Voltage	VCBO	-45	-60		-100	V
Collector-Emitter Voltage	VCEO	-45	-60		-80	V
Emitter-Base Voltage	VEBO		-5			V
Peak Pulse Current	ICM		-1.5			A
Continuous Collector Current	IC		-1			A
Power Dissipation at Tamb=25°C	Ptot		1			W
Operating and Storage Temperature Range	Tj:Tstg		-65 to +150			°C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER		SYMBOL	MIN.	TYP.	MAX.	UNIT	CONDITIONS.
Collector-Base	BCX53	V(BR)CBO	-100			V	IC =-100μA
Breakdown	BCX52		-60			V	IC =-100μA
Voltage	BCX51		-45			V	IC =-100μA
Collector-Emitter BCX53		V(BR)CEO	-80			V	IC =-10mA*
Breakdown	BCX52		-60				IC =-10mA*
Voltage	BCX51		-45				IC =-10mA*
Emitter-Base		V(BR)EBO	-5			V	IE =-10μA
Breakdown Voltage
Collector Cut-Off Current		ICBO			-0.1	μA	VCB =-30V
					-20	μA	VCB =-30V, Tamb =150°C
Emitter Cut-Off Current		IEBO			-20	nA	VEB =-4V
Collector-Emitter		VCE(sat)			-0.5	V	IC =-500mA, IB =-50mA*
Saturation Voltage
Base-Emitter		VBE(on)			-1.0	V	IC =-500mA, VCE =-2V*
Turn-On Voltage
Static Forward Current		hFE	25				IC =-5mA, VCE =-2V*
Transfer Ratio			40		250		IC =-150mA, VCE =-2V*
		-10	25				IC =-500mA, VCE =-2V*
			63		160		IC =-150mA, VCE =-2V*
		-16	100		250		IC =-150mA, VCE =-2V*
Transition Frequency		fT	150			MHz	IC =-50mA, VCE =-10V,
							f=100MHz
Output Capacitance		Cobo			25	pF	VCB =-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300μs. Duty cycle ≤2%

3 - 34