Zetex (Now Diodes) BCX41 Schematic [ru]

Loading...

SOT23 NPN SILICON PLANAR

 

MEDIUM POWER TRANSISTOR

BCX41

 

ISSUE 3 –OCTOBER 1995

 

PARTMARKING DETAIL – EK

2

1

 

 

3

ABSOLUTE MAXIMUM RATINGS.

 

PARAMETER

SYMBOL

VALUE

UNIT

 

 

 

 

Collector-Emitter Voltage

VCES

125

V

Collector-Emitter Voltage

VCEO

125

V

Emitter-Base Voltage

VEBO

5

V

Peak Pulse Current

ICM

1

A

Continuous Collector Current

IC

800

mA

Base Current

IB

100

mA

Power Dissipation at Tamb=25°C

PTOT

330

mW

Operating and Storage Temperature Range

Tj:Tstg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

CONDITIONS.

 

 

 

 

 

 

 

Collector-Base Cut-Off

ICES

 

 

100

nA

VCE =100V

Current

 

 

 

10

μA

VCE =100V, Tamb =150°C

Collector Cut-Off

ICEX

 

 

10

μA

VCE =100V,VBE=0.2V,Tamb =85°C

Current

 

 

 

75

μA

VCE=100V,VBE=0.2V,

 

 

 

 

 

 

Tamb=125°C

Emitter Cut-Off

IEBO

 

 

100

nA

VEB =4V

Current

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector-Emitter

VCE(sat)

 

 

0.9

V

IC =300mA, IB =30mA *

Saturation Voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

Base-Emitter

VBE(sat)

 

 

1.4

V

IC =300mA, IB =30mA *

Saturation Voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

Static Forward

hFE

25

 

 

 

IC =10A, VCE =1V

Current Transfer Ratio

 

63

 

 

 

IC =100mA, VCE =1V *

 

 

40

 

 

 

IC =200mA, VCE =1V *

Transition Frequency

fT

 

100

 

MHz

IC =10mA, VCE =5V

 

 

 

 

 

 

f =20MHz

 

 

 

 

 

 

 

Output Capacitance

Cobo

 

12

 

pF

VCB =10V, IE=Ie=0, f =1MHz

* Measured under pulsed conditions. Pulse width = 300μs. Duty cycle 2%

3 - 33

+ 1 hidden pages