Zetex (Now Diodes) BCX17, BCX17R Schematic [ru]

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SOT23 PNP SILICON PLANAR

 

 

BCX17

MEDIUM POWER TRANSISTOR

 

ISSUE 4 – MARCH 2001

 

 

 

 

 

 

 

 

 

 

 

 

PARTMARKING DETAILS –

BCX17

– T1

 

 

 

 

 

 

 

E

 

BCX17R

– T4

 

C

 

 

 

 

 

COMPLIMENTARY TYPES -

BCX19

 

 

 

 

B

 

 

 

 

 

 

 

 

 

 

SOT23

 

ABSOLUTE MAXIMUM RATINGS.

 

 

 

 

 

 

 

 

 

 

PARAMETER

 

 

SYMBOL

VALUE

 

UNIT

 

 

 

 

 

 

 

Collector-Emitter Voltage

 

 

VCES

-50

 

V

Collector-Emitter Voltage (IC =-10mA)

 

VCEO

-45

 

V

Emitter-Base Voltage

 

 

VEBO

-5

 

V

Collector Current

 

 

IC

-500

 

mA

Peak Collector Current

 

 

ICM

-1000

 

mA

Peak Emitter Current

 

 

IEM

-1000

 

mA

Base Current

 

 

IB

-100

 

mA

Peak Base Current

 

 

IBM

-200

 

mA

Power Dissipation at Tamb=25°C

 

Ptot

330

 

mW

Operating and Storage Temperature Range

 

Tj:Tstg

-55 to +150

 

°C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

CONDITIONS.

 

 

 

 

 

 

 

Collector-Base Cut-Off

ICBO

 

 

-100

nA

IE =0, VCB =-20V

Current

 

 

 

-200

A

IE =0, VCB =-20V, Tj=150°C

Emitter-Base Cut-Off

IEBO

 

 

-10

A

IC =0, VEB =-1V

Current

 

 

 

 

 

 

 

 

 

 

 

 

 

Base-Emitter Voltage

VBE

 

 

-1.2

V

IC =-500mA, VCE =-1V*

Collector-Emitter

VCE(sat)

 

 

-620

mV

IC =-500mA, IB =-50mA*

Saturation Voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

Static Forward Current

hFE

100

 

600

 

IC =-100 mA, VCE =-1V

Transfer Ratio

 

70

 

 

 

IC =-300mA, VCE =-1V*

 

 

40

 

 

 

IC =-500mA, VCE =-1V*

Transition Frequency

fT

 

100

 

MHz

IC =-10mA, VCE =-5V

 

 

 

 

 

 

f =35MHz

 

 

 

 

 

 

 

Output Capacitance

Cobo

 

8.0

 

pF

VCB =-10V, f =1MHz

*Measured under pulsed conditions.

 

 

 

 

 

Spice parameter data is available upon request for this device

 

 

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