Zetex (Now Diodes) BCX17, BCX17R Schematic [ru]
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SOT23 PNP SILICON PLANAR |
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BCX17 |
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MEDIUM POWER TRANSISTOR |
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ISSUE 4 – MARCH 2001 |
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PARTMARKING DETAILS – |
BCX17 |
– T1 |
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E |
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BCX17R |
– T4 |
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C |
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COMPLIMENTARY TYPES - |
BCX19 |
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B |
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SOT23 |
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ABSOLUTE MAXIMUM RATINGS. |
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PARAMETER |
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SYMBOL |
VALUE |
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UNIT |
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Collector-Emitter Voltage |
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VCES |
-50 |
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V |
Collector-Emitter Voltage (IC =-10mA) |
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VCEO |
-45 |
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V |
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Emitter-Base Voltage |
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VEBO |
-5 |
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V |
Collector Current |
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IC |
-500 |
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mA |
Peak Collector Current |
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ICM |
-1000 |
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mA |
Peak Emitter Current |
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IEM |
-1000 |
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mA |
Base Current |
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IB |
-100 |
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mA |
Peak Base Current |
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IBM |
-200 |
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mA |
Power Dissipation at Tamb=25°C |
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Ptot |
330 |
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mW |
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Operating and Storage Temperature Range |
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Tj:Tstg |
-55 to +150 |
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°C |
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ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER |
SYMBOL |
MIN. |
TYP. |
MAX. |
UNIT |
CONDITIONS. |
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Collector-Base Cut-Off |
ICBO |
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-100 |
nA |
IE =0, VCB =-20V |
Current |
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-200 |
A |
IE =0, VCB =-20V, Tj=150°C |
Emitter-Base Cut-Off |
IEBO |
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-10 |
A |
IC =0, VEB =-1V |
Current |
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Base-Emitter Voltage |
VBE |
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-1.2 |
V |
IC =-500mA, VCE =-1V* |
Collector-Emitter |
VCE(sat) |
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-620 |
mV |
IC =-500mA, IB =-50mA* |
Saturation Voltage |
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Static Forward Current |
hFE |
100 |
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600 |
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IC =-100 mA, VCE =-1V |
Transfer Ratio |
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70 |
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IC =-300mA, VCE =-1V* |
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40 |
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IC =-500mA, VCE =-1V* |
Transition Frequency |
fT |
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100 |
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MHz |
IC =-10mA, VCE =-5V |
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f =35MHz |
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Output Capacitance |
Cobo |
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8.0 |
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pF |
VCB =-10V, f =1MHz |
*Measured under pulsed conditions. |
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Spice parameter data is available upon request for this device |
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