Zetex (Now Diodes) BCV29 Schematic [ru]

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BCV29 IS OBSOLETE

 

 

 

 

 

 

PLEASE USE BCV49

 

 

 

 

SOT89 NPN SILICON PLANAR

 

BCV29

 

DARLINGTON TRANSISTOR

 

 

 

 

ISSUE 4 – JANUARY 1996

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

COMPLEMENTARY TYPE –

BCV28

 

 

 

 

 

 

 

 

 

C

 

 

PARTMARKING DETAIL –

EF

 

 

 

 

 

 

 

 

 

 

 

 

 

E

 

 

 

 

 

 

 

 

C

 

 

 

 

 

 

 

 

B

 

ABSOLUTE MAXIMUM RATINGS.

 

 

 

 

SOT89

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PARAMETER

 

SYMBOL

 

VALUE

UNIT

 

 

 

 

 

 

 

 

 

 

 

Collector-Base Voltage

 

VCBO

 

40

V

 

 

Collector-Emitter Voltage

 

VCEO

 

30

V

 

 

Emitter-Base Voltage

 

VEBO

 

10

V

 

 

Peak Pulse Current

 

ICM

 

800

mA

 

 

Continuous Collector Current

IC

 

500

mA

 

 

Power Dissipation at Tamb =25°C

Ptot

 

1

W

 

 

Operating and Storage Temperature

Tj:Tstg

 

-65 to +150

°C

 

 

Range

 

 

 

 

 

 

 

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

CONDITIONS.

 

 

 

 

 

 

 

Collector-Base

V(BR)CBO

40

 

 

V

IC=100μA

Breakdown Voltage

 

 

 

 

 

 

Collector-Emitter

V(BR)CEO

30

 

 

V

IC=10mA*

Breakdown Voltage

 

 

 

 

 

 

Emitter-Base

V(BR)EBO

10

 

 

V

IE=10μA

Breakdown Voltage

 

 

 

 

 

 

Collector Cut-Off

ICBO

 

 

100

nA

VCB=30V

Current

 

 

 

10

μA

VCB=30V, Tamb=150°C

Emitter Cut-Off Current

IEBO

 

 

100

nA

VEB=4V

Collector-Emitter

VCE(sat)

 

 

1

V

IC=100mA, IB-0.1mA*

Saturation Voltage

 

 

 

 

 

 

Base-Emitter

VBE(sat)

 

 

1.5

V

IC=100mA, IB=0.1mA*

Saturation Voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

Static Forward Current

hFE

4000

 

 

 

IC=100μA, VCE=1V†

Transfer Ratio

 

10000

 

 

 

IC=10mA, VCE=5V*

 

 

20000

 

 

 

IC=100mA, VCE=5V*

 

 

4000

 

 

 

IC=500mA, VCE=5V*

Transition Frequency

fT

 

150

 

MHz

IC=50mA, VCE=5V

 

 

 

 

 

 

f = 20MHz

 

 

 

 

 

 

 

Output Capacitance

Cobo

 

3.5

 

pF

VCB=10V, f=1MHz

*Measured under pulsed conditions. Pulse width=300μs. Duty cycle 2% For typical graphs see FMMT38A datasheet † Periodic Sample Test Only. Spice parameter data is available upon request for this device

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