Zetex (Now Diodes) BBY40 Schematic [ru]

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SOT23 SILICON PLANAR

 

 

 

BBY40

 

VARIABLE CAPACITANCE DIODE

 

 

 

ISSUE 4 – JANUARY 1998

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PIN CONFIGURATION

 

 

 

 

2

 

1

 

 

 

 

1

 

 

 

 

PARTMARKING DETAIL

 

 

3

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

BBY40 – S2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3

 

 

 

 

 

SOT23

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ABSOLUTE MAXIMUM RATINGS.

 

 

 

 

 

 

 

PARAMETER

SYMBOL

 

 

VALUE

 

UNIT

 

 

 

 

 

 

 

 

 

 

 

 

Power Dissipation at Tamb=25°C

Ptot

330

 

mW

 

Operating and Storage Temperature Range

Tj:Tstg

 

-55 to +150

 

°C

 

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

CONDITIONS.

 

 

 

 

 

 

 

Reverse Breakdown

VBR

28.0

 

 

V

IR = 10μA

Voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

Reverse current

IR

 

 

10

nA

VR = 28V

 

 

 

 

1.0

μA

VR = 28V, Tamb = 60°C

 

 

 

 

 

 

 

TUNING CHARACTERISTICS (at Tamb = 25°C).

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

CONDITIONS.

 

 

 

 

 

 

 

Diode Capacitance

Cd

26.0

 

32.0

pF

VR = 3V, f=1MHz

 

 

4.3

 

6.0

pF

VR = 25V, f=1MHz

Capacitance Ratio

Cd / Cd

5.0

 

6.5

 

VR = 3V/25V, f=1MHz

 

 

 

 

 

 

 

Series Resistance

rd

 

0.4

0.6

Ω

f=200MHz at the value

 

 

 

 

 

 

of VR at which

 

 

 

 

 

 

Cd=25pF

Spice parameter data is available upon request for this device

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