Zetex (Now Diodes) BBY31 Schematic [ru]
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SOT23 SILICON PLANAR |
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BBY31 |
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VARIABLE CAPACITANCE DIODE |
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ISSUE 4 – JANUARY 1998 |
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PIN CONFIGURATION |
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2 |
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1 |
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1 |
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PARTMARKING DETAIL |
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3 |
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BBY31 – S1 |
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3 |
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SOT23 |
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ABSOLUTE MAXIMUM RATINGS. |
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PARAMETER |
SYMBOL |
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VALUE |
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UNIT |
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Power Dissipation at Tamb=25°C |
Ptot |
330 |
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mW |
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Operating and Storage Temperature Range |
Tj:Tstg |
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-55 to +150 |
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°C |
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ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER |
SYMBOL |
MIN. |
TYP. |
MAX. |
UNIT |
CONDITIONS. |
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Reverse Breakdown |
VBR |
28.0 |
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V |
IR = 10μA |
Voltage |
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Reverse current |
IR |
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10 |
nA |
VR = 28V |
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1.0 |
μA |
VR = 28V, Tamb = 85°C |
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TUNING CHARACTERISTICS (at Tamb = 25°C).
PARAMETER |
SYMBOL |
MIN. |
TYP. |
MAX. |
UNIT |
CONDITIONS. |
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Diode Capacitance |
Cd |
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17.5 |
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pF |
VR = 1V, f=1MHz |
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11.5 |
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pF |
VR = 3V, f=1MHz |
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1.8 |
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2.8 |
pF |
VR = 25V, f=1MHz |
Capacitance Ratio |
Cd / Cd |
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5.0 |
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VR = 3V/25V, f=1MHz |
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Series Resistance |
rd |
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1.2 |
Ω |
f=470MHz at the value |
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of VR at which Cd=9pF |
Spice parameter data is available upon request for this device