Zetex (Now Diodes) 2N7002 Schematic [ru]

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2N7002

60V SOT23 N-channel enhancement mode MOSFET

Summary

V(BR)DSS

RDS(on) ( )

ID (A)

60

7.5 @ VGS= 10V

0.5

7.5 @ VGS= 5V

0.05

 

Description

A small signal MOSFET for general purpose switching applications.

Features

Fast switching speed

Low gate drive capability

SOT23 package

Applications

General switching applications

Ordering information

Device

Reel size

Tape width

Quantity per reel

 

(inches)

(mm)

 

 

 

 

 

2N7002

7

8

3,000

 

 

 

 

Device marking

702

D

G

S

S

D

G

Top view

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© Zetex Semiconductors plc 2007

 

 

2N7002

Absolute maximum ratings

 

 

 

 

 

 

 

Parameter

Symbol

Limit

Unit

 

 

 

 

Drain-source voltage

VDS

60

V

Continuous drain current at Tamb=25°C

ID

115

mA

Pulsed drain current

IDM

800

mA

Gate-source voltage

VGS

±40

V

Power dissipation at Tamb =25°C

Ptot

330

mW

Operating and storage temperature range

Tj, Tstg

-55 to +150

°C

Electrical characteristics (at Tamb = 25°C unless otherwise stated)

Parameter

Symbol

Min.

Max.

Unit

Conditions

 

 

 

 

 

 

Drain-source breakdown voltage

BVDSS

60

 

V

ID= 10 A, VGS=0V

Gate-source threshold voltage

VGS(th)

1

2.5

V

ID= 250 A, VDS=VGS

Gate-body leakage

IGSS

 

10

nA

VGS=±20V, VDS=0V

Zero gate voltage drain current

IDSS

 

1

A

VDS= 48V, VGS=0V

 

 

 

500

A

VDS= 48V, VGS=0V, T=125°C

On-state drain current(a)

ID(on)

500

 

mA

VDS= 25V, VGS= 10V

Static drain-source on-state

VDS(on)

 

3.75

V

VGS= 10V, ID= 500mA

voltage(a)

 

 

375

mV

VGS= 5V, ID= 50mA

 

 

 

 

 

 

 

 

 

Static drain-source on-state

RDS(on)

 

7.5

 

VGS= 10V, ID= 500mA

resistance(a)

 

 

7.5

 

VGS= 5V, ID= 50mA

 

 

 

 

 

 

 

 

 

Forward transconductance(a)(b)

gfs

80

 

mS

VDS= 25V, ID= 500mA

Input capacitance(b)

Ciss

 

50

pF

 

Common source output

Coss

 

25

pF

VDS= 25V, VGS=0V f=1MHz

capacitance(b)

 

 

 

 

 

Reverse transfer capacitance(b)

Crss

 

5

pF

 

Turn-on time(b)(c)

t(on)

 

20

ns

VDD≈30V, ID= 200mA,

 

 

 

 

 

Rg=25 , RL=150

Turn-off time(b)(c)

t(off)

 

20

ns

NOTES:

(a)Measured under pulsed conditions. Pulse width 300 s; duty cycle 2%.

(b)Sample test.

(c)Switching times measured with 50 source impedance and <5ns rise time on a pulse generator Spice parameter data is available upon request for this device.

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