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2N7002
60V SOT23 N-channel enhancement mode MOSFET
Summary
V(BR)DSS |
RDS(on) ( ) |
ID (A) |
|
60 |
7.5 @ VGS= 10V |
0.5 |
|
7.5 @ VGS= 5V |
0.05 |
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Description
A small signal MOSFET for general purpose switching applications.
Features
•Fast switching speed
•Low gate drive capability
•SOT23 package
Applications
•General switching applications
Ordering information
Device |
Reel size |
Tape width |
Quantity per reel |
|
(inches) |
(mm) |
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|
|
|
|
2N7002 |
7 |
8 |
3,000 |
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Device marking
702
D
G 
S
S
D
G
Top view
Issue 5 - October 2007 |
1 |
www.zetex.com |
© Zetex Semiconductors plc 2007
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2N7002 |
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Absolute maximum ratings |
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Parameter |
Symbol |
Limit |
Unit |
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|
|
|
Drain-source voltage |
VDS |
60 |
V |
Continuous drain current at Tamb=25°C |
ID |
115 |
mA |
Pulsed drain current |
IDM |
800 |
mA |
Gate-source voltage |
VGS |
±40 |
V |
Power dissipation at Tamb =25°C |
Ptot |
330 |
mW |
Operating and storage temperature range |
Tj, Tstg |
-55 to +150 |
°C |
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter |
Symbol |
Min. |
Max. |
Unit |
Conditions |
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|
|
|
Drain-source breakdown voltage |
BVDSS |
60 |
|
V |
ID= 10 A, VGS=0V |
Gate-source threshold voltage |
VGS(th) |
1 |
2.5 |
V |
ID= 250 A, VDS=VGS |
Gate-body leakage |
IGSS |
|
10 |
nA |
VGS=±20V, VDS=0V |
Zero gate voltage drain current |
IDSS |
|
1 |
A |
VDS= 48V, VGS=0V |
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|
|
500 |
A |
VDS= 48V, VGS=0V, T=125°C |
On-state drain current(a) |
ID(on) |
500 |
|
mA |
VDS= 25V, VGS= 10V |
Static drain-source on-state |
VDS(on) |
|
3.75 |
V |
VGS= 10V, ID= 500mA |
voltage(a) |
|
|
375 |
mV |
VGS= 5V, ID= 50mA |
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Static drain-source on-state |
RDS(on) |
|
7.5 |
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VGS= 10V, ID= 500mA |
resistance(a) |
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7.5 |
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VGS= 5V, ID= 50mA |
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Forward transconductance(a)(b) |
gfs |
80 |
|
mS |
VDS= 25V, ID= 500mA |
Input capacitance(b) |
Ciss |
|
50 |
pF |
|
Common source output |
Coss |
|
25 |
pF |
VDS= 25V, VGS=0V f=1MHz |
capacitance(b) |
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Reverse transfer capacitance(b) |
Crss |
|
5 |
pF |
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Turn-on time(b)(c) |
t(on) |
|
20 |
ns |
VDD≈30V, ID= 200mA, |
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Rg=25 , RL=150 |
Turn-off time(b)(c) |
t(off) |
|
20 |
ns |
NOTES:
(a)Measured under pulsed conditions. Pulse width 300 s; duty cycle 2%.
(b)Sample test.
(c)Switching times measured with 50 source impedance and <5ns rise time on a pulse generator Spice parameter data is available upon request for this device.
Issue 5 - October 2007 |
2 |
www.zetex.com |
© Zetex Semiconductors plc 2007