Zetex ZC930TA, ZC931TA, ZC932TA, ZC933ATA, ZC933TA Datasheet

ZC930, ZMV930, ZV931 series

SILICON 12V HYPERABRUPT VARACTOR DIODES

Device Description

A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low reverse current ensures very low phase noise performance. Available in single or dual common cathode format in a wide rage of miniature surface mount packages.

Features

Close tolerance C-V characteristics

Octave tuning from 0 to 6V

Low IR (typically 200pA)

Excellent phase noise performance

High Q

Range of miniature surface mount packages

Applications

VCXO and TCXO

Wireless communications

Pagers

Mobile radio

ISSUE 6 - JANUARY 2002

1

ZC930, ZMV930, ZV931 series

TUNING CHARACTERISTICS at Tamb = 25°C

PART	Capacitance	Capacitance			Capacitance	Minimum Q
	VR=1V		VR=2.5V		VR=4V	VR=4V
						f=50MHz
	MIN pF	MIN pF		MAX pF	MAX pF
930	8.70	4.30		5.50	2.90	200
931	13.50	6.50		7.80	4.00	300
932	17.00	8.50		10.50	5.50	200
933	42.00	18.00		27.00	12.00	150
933A	42.00	20.25		24.75	12.00	150
934	95.00	40.00		65.00	25.00	80
934A	95.00	47.25		57.75	25.00	80

ABSOLUTE MAXIMUM RATINGS

PARAMETER	SYMBOL	MAX	UNIT
Reverse voltage	VR	12	V
Forward current	IF	100	mA
Power dissipation at Tamb = 25 C SOT23	Ptot	330	mW
Power dissipation at Tamb = 25 C SOD323	Ptot	330	mW
Power dissipation at Tamb = 25 C SOD523	Ptot	250	mW
Operating and storage temperature range		-55 to +150	C

ELECTRICAL CHARACTERISTICS at Tamb = 25°C

PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
Reverse breakdown voltage	IR = 10uA	12			V
Reverse voltage leakage	VR = 8V		0.2	100	nA
Temperature coefficient of capacitance	VR = 3V, f = 1MHz		300	400	ppCm/ C

ISSUE 6 - JANUARY 2002

2