Zetex ZC834ATA, ZC834BTA, ZC835ATA, ZC835BTA, ZC836ATA Datasheet
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830 series
SILICON 28V HYPERABRUPT VARACTOR DIODES
ZC829, ZDC833, ZMV829, ZMDC830, ZV831 Series
Device Description
A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low reverse current ensures very low phase noise performance. Available in single or dual common cathode format in a wide rage of miniature surface mount packages.
Features
Close tolerance C-V characteristics
High tuning ratio
Low IR (typically 200pA)
Excellent phase noise performance
High Q
Range of miniature surface mount packages
Applications
VCXO and TCXO
Wireless communications
Pagers
Mobile radio
*Where steeper CV slopes are required there is the 12V hyperabrupt range.
ZC930, ZMV930, ZV930, ZV931 Series
ISSUE 6 - JANUARY 2002
1
830 series
TUNING CHARACTERISTICS at Tamb = 25°C
PART |
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Capacitance (pF) |
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Min Q |
Capacitance Ratio |
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VR=2V, f=1MHz |
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VR=3V |
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C2 / C20 |
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f=50MHz |
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at f=1MHz |
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MIN. |
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NOM. |
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MAX. |
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MIN. |
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MAX. |
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829A |
7.38 |
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8.2 |
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9.02 |
250 |
4.3 |
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5.8 |
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829B |
7.79 |
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8.2 |
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8.61 |
250 |
4.3 |
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5.8 |
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830A |
9.0 |
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10.0 |
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11.0 |
300 |
4.5 |
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6.0 |
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830B |
9.5 |
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10.0 |
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10.5 |
300 |
4.5 |
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6.0 |
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831A |
13.5 |
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15.0 |
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16.5 |
300 |
4.5 |
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6.0 |
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831B |
14.25 |
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15.0 |
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15.75 |
300 |
4.5 |
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6.0 |
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832A |
19.8 |
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22.0 |
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24.2 |
200 |
5.0 |
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6.5 |
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832B |
20.9 |
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22.0 |
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23.1 |
200 |
5.0 |
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6.5 |
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833A |
29.7 |
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33.0 |
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36.3 |
200 |
5.0 |
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6.5 |
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833B |
31.35 |
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33.0 |
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34.65 |
200 |
5.0 |
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6.5 |
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834A |
42.3 |
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47.0 |
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51.7 |
200 |
5.0 |
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6.5 |
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834B |
44.65 |
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47.0 |
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49.35 |
200 |
5.0 |
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6.5 |
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835A |
61.2 |
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68.0 |
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74.8 |
100 |
5.0 |
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6.5 |
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835B |
64.6 |
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68.0 |
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71.4 |
100 |
5.0 |
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6.5 |
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836A |
90.0 |
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100.0 |
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110.0 |
100 |
5.0 |
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6.5 |
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836B |
95.0 |
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100.0 |
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105.0 |
100 |
5.0 |
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6.5 |
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ABSOLUTE MAXIMUM RATINGS
PARAMETER |
SYMBOL |
MAX |
UNIT |
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Forward current |
IF |
200 |
mA |
Power dissipation at Tamb = 25 C SOT23 |
Ptot |
330 |
mW |
Power dissipation at Tamb = 25 C SOD323 |
Ptot |
330 |
mW |
Power dissipation at Tamb = 25 C SOD523 |
Ptot |
250 |
mW |
Operating and storage temperature range |
|
-55 to +150 |
C |
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ELECTRICAL CHARACTERISTICS at Tamb = 25°C
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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Reverse breakdown voltage |
IR = 10uA |
25 |
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|
V |
Reverse voltage leakage |
VR = 20V |
|
0.2 |
20 |
nA |
Temperature coefficient of capacitance |
VR = 3V, f = 1MHz |
|
300 |
400 |
ppCm/ C |
ISSUE 6 - JANUARY 2002
2
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