WTE P600M, P600J, P600G, P600B, P600A Datasheet
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W T E |
P600A – P600M |
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PO WE R SEM IC O ND UC TO R S |
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6.0A SILICON RECTIFIER |
Features
!Diffused Junction
!Low Forward Voltage Drop
!High Current Capability
!High Reliability
!High Surge Current Capability
Mechanical Data
!Case: Molded Plastic
!Terminals: Plated Leads Solderable per MIL-STD-202, Method 208
!Polarity: Cathode Band
!Weight: 2.1 grams (approx.)
!Mounting Position: Any
!Marking: Type Number
!Epoxy: UL 94V-O rate flame retardant
A 
B 
A
C
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D |
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P-600 |
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Dim |
Min |
Max |
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A |
25.4 |
— |
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B |
8.60 |
9.10 |
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C |
1.20 |
1.30 |
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D |
8.60 |
9.10 |
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All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic |
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Symbol |
P600A |
P600B |
P600D |
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P600G |
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P600J |
P600K |
P600M |
Unit |
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Peak Repetitive Reverse Voltage |
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VRRM |
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Working Peak Reverse Voltage |
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VRWM |
50 |
100 |
200 |
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400 |
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600 |
800 |
1000 |
V |
DC Blocking Voltage |
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VR |
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RMS Reverse Voltage |
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VR(RMS) |
35 |
70 |
140 |
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280 |
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420 |
560 |
700 |
V |
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Average Rectified Output Current |
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IO |
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6.0 |
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A |
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(Note 1) |
@TA = 60°C |
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Non-Repetitive Peak Forward Surge Current |
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8.3ms Single half sine-wave superimposed on |
IFSM |
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400 |
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A |
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rated load (JEDEC Method) |
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Forward Voltage |
@IF = 6.0A |
VFM |
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1.0 |
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V |
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Peak Reverse Current |
@TA = 25°C |
IRM |
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5.0 |
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µA |
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At Rated DC Blocking Voltage |
@TA = 100°C |
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1.0 |
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mA |
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Typical Junction Capacitance (Note 2) |
Cj |
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150 |
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pF |
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Typical Thermal Resistance Junction to Ambient |
R JA |
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20 |
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K/W |
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(Note 1) |
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Operating Temperature Range |
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Tj |
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-50 to +150 |
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°C |
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Storage Temperature Range |
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TSTG |
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-50 to +150 |
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°C |
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*Glass passivated forms are available upon request
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
P600A – P600M |
1 of 3 |
© 2002 Won-Top Electronics |
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