WTE KBJ25D, KBJ25B, KBJ25A, KBJ25M, KBJ25K Datasheet

				WTE	KBJ25A – KBJ25M
			POWER SEMICONDUCTORS		25A BRIDGE RECTIFIER

Features

!Diffused Junction

!

Low Forward Voltage Drop

A

!

High Current Capability

G

KBJ-6

!

High Reliability

Dim

Min

Max

!

High Surge Current Capability

B

A

29.7

30.3

!

Ideal for Printed Circuit Boards

C

+

~

~ -

B

19.7

20.3

H

K

D

C

4.7

4.9

D

17.0

18.0

J

E

E

3.8

4.2

Mechanical Data

P

R

R

G

3.1Ø

3.4Ø

H

2.3

2.7

!

Case: Molded Plastic

J

0.9

1.1

!

Terminals: Plated Leads Solderable per

M

K

2.0

2.4

MIL-STD-202, Method 208

N

L

0.6

0.7

!

Polarity: As Marked on Body

M

4.4

4.8

!

Weight: 4.0 grams (approx.)

N

3.4

—

!

Mounting Position: Any

S

P

9.8

10.2

!

Marking: Type Number

G

T

R

7.3

7.7

S

10.8

11.2

T

2.6

—

L

All Dimensions in mm

Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

KBJ

KBJ

KBJ

KBJ

KBJ

KBJ

KBJ

Unit

25A

25B

25D

25G

25J

25K

25M

Peak Repetitive Reverse Voltage

VRRM

Working Peak Reverse Voltage

VRWM

50

100

200

400

600

800

1000

V

DC Blocking Voltage

VR

RMS Reverse Voltage

VR(RMS)

35

70

140

280

420

560

700

V

Average Rectified Output Current

@TC = 100°C

IO

25

A

(Note 1)

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

IFSM

300

A

rated load (JEDEC Method)

Forward Voltage (per element)

@IF = 12.5A

VFM

1.1

V

Peak Reverse Current

@TA = 25°C

IR

10

µA

At Rated DC Blocking Voltage

@TC = 100°C

200

Operating and Storage Temperature Range

Tj, TSTG

-55 to +150

°C

Note: 1. Device mounted on 7.5 x 7.5 x 0.8cm thick AL plate heatsink.

KBJ25A – KBJ25M

1 of 3

© 2002 Won-Top Electronics