WTE KBJ10B, KBJ10K, KBJ10G, KBJ10D, KBJ10A Datasheet

				WTE	KBJ10A – KBJ10M
			POWER SEMICONDUCTORS		10A BRIDGE RECTIFIER

Features

!Diffused Junction

!

Low Forward Voltage Drop

A

!

High Current Capability

G

KBJ-4

!

High Reliability

Dim

Min

Max

!

High Surge Current Capability

B

A

24.7

25.3

!

Ideal for Printed Circuit Boards

C

+

~ ~

-

H

B

14.7

15.3

J

L

D

C

—

4.0

D

17.0

18.0

K

E

E

3.3

3.7

Mechanical Data

P P P

G

3.1Ø

3.4Ø

H

1.05

1.45

!

Case: Molded Plastic

J

1.7

2.1

!

Terminals: Plated Leads Solderable per

M

K

0.9

1.1

MIL-STD-202, Method 208

N

L

1.5

1.9

!

Polarity: As Marked on Body

M

4.8

5.16

!

Weight: 4.0 grams (approx.)

N

3.8

4.4

!

Mounting Position: Any

R

P

7.3

7.7

!

Marking: Type Number

G

S

R

9.3

9.7

S

3.4

3.9

T

0.6

0.8

T

All Dimensions in mm

Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

KBJ10A

KBJ10B

KBJ10D

KBJ10G

KBJ10J

KBJ10K

KBJ10M

Unit

Peak Repetitive Reverse Voltage

VRRM

Working Peak Reverse Voltage

VRWM

50

100

200

400

600

800

1000

V

DC Blocking Voltage

VR

RMS Reverse Voltage

VR(RMS)

35

70

140

280

420

560

700

V

Average Rectified Output Current @TC = 100°C

IO

10

A

@TA = 25°C

3.0

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

IFSM

170

A

rated load (JEDEC Method)

I2t Rating for Fusing (t < 8.35ms)

I2t

120

A2s

Forward Voltage (per diode)

@IF = 5.0A

VFM

1.05

V

Peak Reverse Current

@TA = 25°C

IR

5.0

µA

At Rated DC Blocking Voltage

@TC = 100°C

500

Typical Thermal Resistance (Note 1)

R JC

2.5

°C/W

Operating and Storage Temperature Range

Tj, TSTG

-55 to +150

°C

Note: 1. Thermal resistance junction to case, mounted on 150 x 150 x 1.6mm thick Cu plate heatsink.

KBJ10A – KBJ10M

1 of 3

© 2002 Won-Top Electronics