W24129A
16K × 8 HIGH-SPEED CMOS STATIC RAM
GENERAL DESCRIPTION
The W24129A is a high-speed, low-power CMOS static RAM organized as 16384 × 8 bits that
operates on a single 5-volt power supply. This device is manufactured using Winbond's high
performance CMOS technology.
FEATURES
• High-speed access time: 12/15 nS (max.)
• Low-power consumption:
− Active: 400 mW (typ.)
• Single +5V power supply
• Fully static operation
PIN CONFIGURATION
V
DD
WE
A13
A8
A9
A11
OE
A10
A12
NC
1
2
3
A7
4
A6
A5
5
A4
6
A3
7
A2
8
28
27
26
25
24
23
22
21
• All inputs and outputs directly TTL compatible
• Three-state outputs
• Available packages: 28-pin 300 mil SOJ and
skinny DIP
BLOCK DIAGRAM
DD
V
SS
V
A0
.
DECODER
.
A13
CS
OE
WE
CONTROL
CORE
ARRAY
ARRAY
DATA I/O
I/O1
.
.
I/O8
I/O1
I/O2
I/O3
V
A1
A0
SS
9 20
10
11
12
13 16
14 15
CS
I/O8
19
I/O7
18
I/O6
17
I/O5
I/O4
PIN DESCRIPTION
SYMBOL DESCRIPTION
A0−A13
I/O1−I/O8
Address Inputs
Data Inputs/Outputs
Chip Select Input
Write Enable Input
Output Enable Input
VDD Power Supply
VSS Ground
Publication Release Date: July 1995
- 1 - Revision A2
W24129A
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER RATING UNIT
Supply Voltage to VSS Potential -0.5 to +7.0 V
Input/Output to VSS Potential -0.5 to VDD +0.5 V
Allowable Power Dissipation 1.0 W
Storage Temperature -65 to +150
Operating Temperature 0 to +70
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the
device.
°C
°C
TRUTH TABLE
CS OE WE MODE I/O1-I/O8 VDD CURRENT
H X X Not Selected High Z ISB,ISB1
L H H Output Disable High Z IDD
L L H Read Data Out IDD
L X L Write Data In IDD
OPERATING CHARACTERISTICS
(VDD = 5V ±5%, VSS = 0V, TA = 0 to 70° C)
PARAMETER SYM. TEST CONDITIONS MIN. TYP. MAX. UNIT
Input Low Voltage VIL - -0.5 - +0.8 V
Input High Voltage VIH - +2.2 - VDD +0.5 V
Input Leakage Current ILI VIN = VSS to VDD -10 - +10
Output Leakage
Current
Output Low Voltage VOL IOL = +8.0 mA - - 0.4 V
Output High Voltage VOH IOH = -4.0 mA 2.4 - - V
Standby Power
Supply Current
Note: Typical characteristics are at VDD = 5V, TA = 25° C.
ILO
IDD
ISB
ISB1
VI/O = VSS to VDD, CS = VIH
or OE = VIH or WE = VIL
= VIL, I/O = 0 mA
Cycle = MIN 15 - - 150 mA
= VIH
Cycle = MIN, Duty = 100%
≥ VDD -0.2V
12 - - 160 mA
-10 - +10
- - 30 mA
- - 5 mA
µA
µA
- 2 -
W24129A
CAPACITANCE
(VDD = 5V, TA = 25° C, f = 1 MHz)
PARAMETER SYM. CONDITIONS MAX. UNIT
Input Capacitance CIN VIN = 0V 8 pF
Input/Output Capacitance CI/O VOUT = 0V 10 pF
Note: These parameters are sampled but not 100% tested.
AC TEST CONDITIONS
PARAMETER CONDITIONS
Input Pulse Levels 0V to 3V
Input Rise and Fall Times 5 nS
Input and Output Timing Reference Level 1.5V
Output Load CL = 30 pF, IOH/IOL = -4 mA/8 mA
AC TEST LOADS AND WAVEFORM
5V
OUTPUT
R1 480 ohm
30 pF
Including
Jig and
Scope
R2
255 ohm
3.0V
0V
5 nS
90% 90%
10%
10%
OUTPUT
(For T
5 nS
5V
CLZ
T
OLZTCHZ
,
R1 480 ohm
5 pF
Including
Jig and
Scope
OHZ
, ,
T
,
T
WHZ
R2
255 ohm
,
)
TOW
Publication Release Date: July 1995
- 3 - Revision A2