White Electronic Designs EDI9F416128LP85BNC, EDI9F416128LP70BNC, EDI9F416128LP100BNC, EDI9F416128C85BNC, EDI9F416128C100BNC Datasheet

0 (0)
White Electronic Designs EDI9F416128LP85BNC, EDI9F416128LP70BNC, EDI9F416128LP100BNC, EDI9F416128C85BNC, EDI9F416128C100BNC Datasheet

EDI9F416128C

4x128Kx16 Static RAM CMOS, Module

FEATURES

ν4x128Kx16 bit CMOS Static

νRandom Access Memory

Access Times 70 thru 100ns

Data Retention Function (EDI9F416128LP )

TTL Compatible Inputs and Outputs

Fully Static, No Clocks

νHigh Density Packaging

80 Pin SIMM, No. 318

νSingle +5V (±10%) Supply Operation

DESCRIPTION

The EDI9F416128C is a 8192K bit CMOS Static RAM based on eight 128Kx8 Static RAMs mounted on a multi-layered epoxy laminate (FR-4) substrate.

A low power version with data retention (EDI9F416128LP) is also available.

All inputs and outputs are TTL compatible and operate from a single +5V supply. Fully asynchronous, the EDI9F416128C requires no clocks or refreshing for operation.

FIG. 1

PIN CONFIGURATIONS AND BLOCK DIAGRAM

PIN NAMES

AØ-A16

Address Inputs

EØ-E3

Chip Enable

G

Output Enables

WH-WL

Write Enables

E

Chip Select

DQØ-DQ15

Data Input/Output

VCC

Supply 5 Volts

VSS

Ground

NC

No Connect

Aug. 2002 Rev. 2A

1

White Electronic Designs Corporation • (508) 366-5151 • www.whiteedc.com

ECO #15521

 

 

EDI9F416128C

ABSOLUTE MAXIMUM RATINGS*

Voltage on any pin relative to VSS

-0.5V to 7.0V

Operating Temperature TA (Ambient)

 

Commercial

0°C to +70°C

Industrial

-40°C to +85°C

Storage Temperature

 

Plastic

-55°C to +125°C

Power Dissipation

1 Watt

Output Current.

20 mA

*Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions greater than those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

RECOMMENDED DC OPERATING CONDITIONS

Parameter

Sym

Min

Typ

Max

Units

Supply Voltage

VCC

4.5

5.0

5.5

V

 

Supply Voltage

VSS

0

0

0

V

 

Input High Voltage

VIH

2.2

--

6.0

V

 

Input Low Voltage

VIL

-0.3

--

0.8

V

 

AC TEST CONDITIONS

Input Pulse Levels

VSS to 3.0V

Input Rise and Fall Times

5ns

 

 

Input and Output Timing Levels

1.5V

 

 

Output Load 70ns

1TTL = 30pF

 

 

85-120ns

1TTL, CL =100pF

 

(note: For TEHQZ,TGHQZ and TWLQZ, CL = 5pF)

DC ELECTRICAL CHARACTERISTICS

Parameter

Sym

 

 

 

 

 

 

Conditions

 

Min

Typ

Max

Units

Operating Power

ICC1

W,

 

E

= VIL, II/O = 0mA,

 

--

94

158

mA

 

Supply Current

 

 

 

 

 

 

 

 

Min Cycle

 

 

 

 

 

 

Standby (TTL) Power

ICC2

 

E

³ VIH, VIN £ VIL

 

--

56

120

mA

 

Supply Current

 

 

 

 

 

 

 

 

VIN ³ VIH

 

 

 

 

 

 

Full Standby Power

ICC3

 

 

 

 

 

E

³ VCC-0.2V

C

--

 

24

mA

 

Supply Current

 

VIN ³ VCC-0.2V or

LP

--

 

80

µA

CMOS

 

 

 

 

 

 

 

 

VIN £ 0.2V

 

 

 

 

 

 

Input Leakage Current

ILI

 

 

VIN = 0V to VCC

 

--

--

±10

µA

 

Output Leakage Current

ILO

 

 

V I/O = 0V to VCC

 

--

--

±10

µA

 

Output High Voltage

VOH

 

 

 

 

 

 

IOH = -1.0mA

 

2.4

--

--

V

 

Output Low Voltage

VOL

 

 

 

 

 

 

IOL = 2.1mA

 

--

--

0.4

V

 

TRUTH TABLE

 

 

 

 

 

 

 

 

 

 

 

 

 

G

E

W

Mode

Output

Power

 

 

X

H

 

X

Standby

High Z

ICC2, ICC3

 

 

H

L

 

H

Output Deselect

High Z

ICC1

 

 

L

L

 

H

Read

DOUT

ICC1

 

 

X

L

 

L

Write

DIN

ICC1

 

CAPACITANCE

(f=1.0MHz, VIN=VCC or VSS)

Parameter

Sym

Max

Unit

Address Lines

CI

60

pF

Data Lines

CD/Q

80

pF

Chip Enable Line

CC

15

pF

Write and Output Enable Lines

CW

60

pF

White Electronic Designs Corporation • (508) 366-5151 • www.whiteedc.com

2

Aug. 2002 Rev. 2A

 

 

ECO #15521

Loading...
+ 4 hidden pages