Telefunken TCDT1124G, TCDT1124, TCDT1123G, TCDT1123, TCDT1122 Datasheet
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TCDT1120(G) Series
Vishay Telefunken
Optocoupler with Phototransistor Output
Description
The TCDT1120(G) series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package.
The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements.
Applications
Circuits for safe protective separation against
14827
electrical shock according to safety class II (reinforced isolation):
DFor appl. class I ± IV at mains voltage ≤ 300 V
DFor appl. class I ± III at mains voltage ≤ 600 V according to VDE 0884, table 2, suitable for:
Switch-mode power supplies, line receiver, computer peripheral interface, microprocessor system interface.
VDE Standards
These couplers perform safety functions according to the following equipment standards:
DVDE 0884
Optocoupler for electrical safety requirements
DIEC 950/EN 60950
Office machines (applied for reinforced isolation for mains voltage ≤ 400 VRMS)
DVDE 0804
Telecommunication apparatus and data processing
DIEC 65
Safety for mains-operated electronic and related household apparatus
Order Instruction
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Ordering Code |
CTR Ranking |
Remarks |
TCDT1120/ TCDT1120G1) |
>40% |
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TCDT1122/ TCDT1122G1) |
63 to 125% |
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TCDT1123/ TCDT1123G1) |
100 to 200% |
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TCDT1124/ TCDT1124G1) |
160 to 320% |
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1) G = Leadform 10.16 mm; G is not market on the body
224 |
Rev. A3, 11±Jan±99 |
TCDT1120(G) Series
Vishay Telefunken
Features
Approvals:
DBSI: BS EN 41003, BS EN 60095 (BS 415), BS EN 60950 (BS 7002),
Certificate number 7081 and 7402
DFIMKO (SETI): EN 60950, Certificate number 12399
DUnderwriters Laboratory (UL) 1577 recognized, file number E-76222
DVDE 0884, Certificate number 94778
VDE 0884 related features:
DRated impulse voltage (transient overvoltage) VIOTM = 6 kV peak
DIsolation test voltage (partial discharge test voltage) Vpd = 1.6 kV
DRated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak)
DRated recurring peak voltage (repetitive) VIORM = 600 VRMS
DCreepage current resistance according to VDE 0303/IEC 112
Comparative Tracking Index: CTI = 275
DThickness through insulation ≥ 0.75 mm
General features:
DIsolation materials according to UL94-VO
DPollution degree 2 (DIN/VDE 0110 resp. IEC 664)
DClimatic classification 55/100/21 (IEC 68 part 1)
DSpecial construction:
Therefore, extra low coupling capacity of typical 0.3 pF, high Common Mode Rejection
DLow temperature coefficient of CTR
DBase not connected
DCTR offered in 4 groups
DCoupling System A
Absolute Maximum Ratings
Input (Emitter)
Parameter |
Test Conditions |
Symbol |
Value |
Unit |
Reverse voltage |
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VR |
5 |
V |
Forward current |
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IF |
60 |
mA |
Forward surge current |
tp ≤ 10 ms |
IFSM |
3 |
A |
Power dissipation |
Tamb ≤ 25°C |
PV |
100 |
mW |
Junction temperature |
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Tj |
125 |
°C |
Output (Detector) |
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Parameter |
Test Conditions |
Symbol |
Value |
Unit |
Collector base voltage |
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VCBO |
90 |
V |
Collector emitter voltage |
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VCEO |
90 |
V |
Emitter collector voltage |
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VECO |
7 |
V |
Collector current |
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IC |
50 |
mA |
Collector peak current |
tp/T = 0.5, tp ≤ 10 ms |
ICM |
100 |
mA |
Power dissipation |
Tamb ≤ 25°C |
PV |
150 |
mW |
Junction temperature |
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Tj |
125 |
°C |
Coupler |
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Parameter |
Test Conditions |
Symbol |
Value |
Unit |
Isolation test voltage (RMS) |
t = 1 min |
VIO |
3.75 |
kV |
Total power dissipation |
Tamb ≤ 25°C |
Ptot |
250 |
mW |
Ambient temperature range |
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Tamb |
±55 to +100 |
°C |
Storage temperature range |
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Tstg |
±55 to +125 |
°C |
Soldering temperature |
2 mm from case, t ≤ 10 s |
Tsd |
260 |
°C |
Rev. A3, 11±Jan±99 |
225 |
TCDT1120(G) Series
Vishay Telefunken
Electrical Characteristics (Tamb = 25°C)
Input (Emitter)
Parameter |
Test Conditions |
Symbol |
Min. |
Typ. |
Max. |
Unit |
Forward voltage |
IF = 50 mA |
VF |
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1.25 |
1.6 |
V |
Junction capacitance |
VR = 0, f = 1 MHz |
Cj |
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50 |
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pF |
Output (Detector)
Parameter |
Test Conditions |
Symbol |
Min. |
Typ. |
Max. |
Unit |
Collector base voltage |
IC = 100 mA |
VCBO |
90 |
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V |
Collector emitter voltage |
IC = 1 mA |
VCEO |
90 |
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V |
Emitter collector voltage |
IE = 100 mA |
VECO |
7 |
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V |
Collector emitter cut-off |
VCE = 20 V, If = 0 |
ICEO |
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150 |
nA |
current |
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Coupler
Parameter |
Test Conditions |
Symbol |
Min. |
Typ. |
Max. |
Unit |
Collector emitter |
IF = 10 mA, IC = 1 mA |
VCEsat |
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0.3 |
V |
saturation voltage |
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Cut-off frequency |
VCE = 5 V, IF = 10 mA, |
fc |
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110 |
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kHz |
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RL = 100 W |
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Coupling capacitance |
f = 1 MHz |
Ck |
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0.3 |
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pF |
Current Transfer Ratio (CTR)
Parameter |
Test Conditions |
Type |
Symbol |
Min. |
Typ. |
Max. |
Unit |
IC/IF |
VCE = 5 V, IF = 1 mA |
TCDT1120(G) |
CTR |
0.10 |
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TCDT1122(G) |
CTR |
0.15 |
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TCDT1123(G) |
CTR |
0.30 |
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TCDT1124(G) |
CTR |
0.60 |
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VCE = 5 V, IF = 10 mA |
TCDT1120(G) |
CTR |
0.40 |
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TCDT1122(G) |
CTR |
0.63 |
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1.25 |
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TCDT1123(G) |
CTR |
1 |
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2.00 |
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TCDT1124(G) |
CTR |
1.60 |
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3.20 |
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226 |
Rev. A3, 11±Jan±99 |
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