Telefunken TCDT1103G, TCDT1103, TCDT1102G, TCDT1102, TCDT1101 Datasheet

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Telefunken TCDT1103G, TCDT1103, TCDT1102G, TCDT1102, TCDT1101 Datasheet

TCDT1100(G) Series

Vishay Telefunken

Optocoupler with Phototransistor Output

Description

The TCDT1100(G) series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package.

The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements.

Applications

Circuits for safe protective separation against

14827

electrical shock according to safety class II (reinforced isolation):

DFor appl. class I ± IV at mains voltage 300 V

DFor appl. class I ± III at mains voltage 600 V according to VDE 0884, table 2, suitable for:

nc C E

Switch-mode power supplies, line receiver,

6

 

5

 

4

 

computer peripheral interface, microprocessor

 

 

 

 

 

 

 

 

 

 

 

 

 

 

system interface.

 

 

 

 

 

 

VDE Standards

These couplers perform safety functions according to the following equipment standards:

D VDE 0884

 

1

 

2

 

3

 

 

 

 

 

 

 

 

Optocoupler for electrical safety requirements

A (+)

C (±)

nc

 

 

 

D IEC 950/EN 60950

94 9222

Office machines (applied for reinforced isolation for mains voltage 400 VRMS)

DVDE 0804

Telecommunication apparatus and data processing

DIEC 65 Safety for mains-operated electronic and related household apparatus

Order Instruction

Ordering Code

CTR Ranking

Remarks

TCDT1100/ TCDT1100G1)

> 40%

 

TCDT1101/ TCDT1101G1)

40 to 80%

 

TCDT1102/ TCDT1102G1)

63 to 125%

 

TCDT1103/ TCDT1103G1)

100 to 200%

 

1) G = Leadform 10.16 mm; G is not market on the body

208

Rev. A3, 11±Jan±99

TCDT1100(G) Series

Vishay Telefunken

Features

Approvals:

DBSI: BS EN 41003, BS EN 60095 (BS 415), BS EN 60950 (BS 7002),

Certificate number 7081 and 7402

DFIMKO (SETI): EN 60950, Certificate number 12399

DUnderwriters Laboratory (UL) 1577 recognized, file number E-76222

DVDE 0884, Certificate number 94778

VDE 0884 related features:

DRated impulse voltage (transient overvoltage) VIOTM = 6 kV peak

DIsolation test voltage (partial discharge test voltage) Vpd = 1.6 kV

DRated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak)

DRated recurring peak voltage (repetitive) VIORM = 600 VRMS

DCreepage current resistance according to VDE 0303/IEC 112

Comparative Tracking Index: CTI = 275

DThickness through insulation 0.75 mm

General features:

DIsolation materials according to UL94-VO

DPollution degree 2

(DIN/VDE 0110/ resp. IEC 664)

DClimatic classification 55/100/21 (IEC 68 part 1)

DSpecial construction:

Therefore, extra low coupling capacity of typical 0.2 pF, high Common Mode Rejection

DLow temperature coefficient of CTR

DCTR offered in 4 groups

DBase not connected

DCoupling System A

Absolute Maximum Ratings

Input (Emitter)

Parameter

Test Conditions

Symbol

Value

Unit

Reverse voltage

 

VR

5

V

Forward current

 

IF

60

mA

Forward surge current

tp 10 ms

IFSM

3

A

Power dissipation

Tamb 25°C

PV

100

mW

Junction temperature

 

Tj

125

°C

Output (Detector)

 

 

 

 

 

 

 

 

 

Parameter

Test Conditions

Symbol

Value

Unit

Collector emitter voltage

 

VCEO

32

V

Emitter collector voltage

 

VECO

7

V

Collector current

 

IC

50

mA

Collector peak current

tp/T = 0.5, tp 10 ms

ICM

100

mA

Power dissipation

Tamb 25°C

PV

150

mW

Junction temperature

 

Tj

125

°C

Coupler

 

 

 

 

 

 

 

 

 

Parameter

Test Conditions

Symbol

Value

Unit

AC Isolation test voltage (RMS)

t = 1 min

VIO

3.75

kV

Total power dissipation

Tamb 25°C

Ptot

250

mW

Ambient temperature range

 

Tamb

±55 to +100

°C

Storage temperature range

 

Tstg

±55 to +125

°C

Soldering temperature

2 mm from case t 10 s

Tsd

260

°C

Rev. A3, 11±Jan±99

209

TCDT1100(G) Series

Vishay Telefunken

Electrical Characteristics (Tamb = 25°C)

Input (Emitter)

Parameter

Test Conditions

Symbol

Min.

Typ.

Max.

Unit

Forward voltage

IF = 50 mA

VF

 

1.25

1.6

V

Junction capacitance

VR = 0, f = 1 MHz

Cj

 

50

 

pF

Output (Detector)

Parameter

Test Conditions

Symbol

Min.

Typ.

Max.

Unit

Collector emitter voltage

IC = 1 mA

VCEO

32

 

 

V

Emitter collector voltage

IE = 100 mA

VECO

7

 

 

V

Collector emitter cut-off

VCE = 20 V, If = 0, E = 0

ICEO

 

200

 

nA

current

 

 

 

 

 

 

Coupler

Parameter

Test Conditions

Symbol

Min.

Typ.

Max.

Unit

Collector emitter

IF = 10 mA, IC = 1 mA

VCEsat

 

 

0.3

V

saturation voltage

 

 

 

 

 

 

Cut-off frequency

VCE = 5 V, IF = 10 mA,

fc

 

110

 

kHz

 

RL = 100 W

 

 

 

 

 

Coupling capacitance

f = 1 MHz

Ck

 

0.3

 

pF

Current Transfer Ratio (CTR)

Parameter

Test Conditions

Type

Symbol

Min.

Typ.

Max.

Unit

IC/IF

VCE = 5 V, IF = 10 mA

TCDT1100(G)

CTR

0.40

 

 

 

 

 

TCDT1101(G)

CTR

0.40

 

0.80

 

 

 

TCDT1102(G)

CTR

0.63

 

1.25

 

 

 

TCDT1103(G)

CTR

1.00

 

2.00

 

210

Rev. A3, 11±Jan±99

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