2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
Part Number |
V(BR)DSS Min (V) |
rDS(on) Max (W) |
VGS(th) (V) |
ID (A) |
2N7000 |
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5 @ VGS = 10 V |
0.8 to 3 |
0.2 |
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2N7002 |
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7.5 @ VGS = 10 V |
1 to 2.5 |
0.115 |
VQ1000J |
60 |
5.5 @ VGS = 10 V |
0.8 to 2.5 |
0.225 |
VQ1000P |
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5.5 @ VGS = 10 V |
0.8 to 2.5 |
0.225 |
BS170 |
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5 @ VGS = 10 V |
0.8 to 3 |
0.5 |
FEATURES |
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BENEFITS |
D Low On-Resistance: 2.5 W |
D Low Offset Voltage |
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D Low Threshold: 2.1 V |
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D Low-Voltage Operation |
D Low Input Capacitance: |
22 pF |
D Easily Driven Without Buffer |
D Fast Switching Speed: |
7 ns |
D High-Speed Circuits |
D Low Input and Output Leakage |
D Low Error Voltage |
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APPLICATIONS
DDirect Logic-Level Interface: TTL/CMOS
DDrivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.
DBattery Operated Systems
DSolid-State Relays
TO-226AA |
TO-236 |
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(TO-92) |
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(SOT-23) |
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S 1
G 2
D 3
Top View
2N7000
Dual-In-Line
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D1 |
1 |
14 |
D4 |
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N |
S1 |
2 |
13 |
S4 |
N |
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G1 |
3 |
12 |
G4 |
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NC |
4 |
11 |
NC |
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G2 |
5 |
10 |
G3 |
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N |
S2 |
6 |
9 |
S3 |
N |
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D2 |
7 |
8 |
D3 |
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G |
1 |
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3 |
D |
S |
2 |
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Top View
Marking Code: 72wll
72 = Part Number Code for 2N7002 w = Week Code
ll = Lot Traceability
TO-92-18RM
(TO-18 Lead Form)
D 1
G 2
S 3
Top View |
Top View |
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Plastic: |
VQ1000J |
BS170 |
Sidebraze: |
VQ1000P |
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Document Number: 70226 |
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www.vishay.com |
S-04279—Rev. F, 16-Jul-01 |
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11-1 |
2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Single |
Total Quad |
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Parameter |
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Symbol |
2N7000 |
2N7002 |
VQ1000J |
VQ1000P |
VQ1000J/P |
BS170 |
Unit |
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Drain-Source Voltage |
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VDS |
60 |
60 |
60 |
60 |
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60 |
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Gate-Source Voltage— Non-Repetitive |
VGSM |
"40 |
"40 |
"30 |
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"25 |
V |
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Gate-Source Voltage— Continuous |
VGS |
"20 |
"20 |
"20 |
"20 |
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"20 |
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Continuous Drain Current |
TA= 25_C |
ID |
0.2 |
0.115 |
0.225 |
0.225 |
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0.5 |
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(TJ = 150_C) |
TA= 100_C |
0.13 |
0.073 |
0.14 |
0.14 |
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0.175 |
A |
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Pulsed Drain Currenta |
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I |
0.5 |
0.8 |
1 |
1 |
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DM |
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Power Dissipation |
TA= 25_C |
PD |
0.4 |
0.2 |
1.3 |
1.3 |
2 |
0.83 |
W |
TA= 100_C |
0.16 |
0.08 |
0.52 |
0.52 |
0.8 |
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Thermal Resistance, Junction-to-Ambient |
RthJA |
312.5 |
625 |
96 |
96 |
62.5 |
156 |
_C/W |
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Operating Junction and |
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TJ, Tstg |
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–55 to 150 |
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_C |
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Storage Temperature Range |
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Notes
a.Pulse width limited by maximum junction temperature.
b.tp v 50 ms.
SPECIFICATIONS 2N7000 AND 2N7002 (TA = 25_C UNLESS OTHERWISE NOTED)
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Limits |
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2N7000 |
2N7002 |
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Typa |
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Parameter |
Symbol |
Test Conditions |
Min |
Max |
Min |
Max |
Unit |
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Static |
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Drain-Source Breakdown Voltage |
V(BR)DSS |
VGS = 0 V, ID = 10 mA |
70 |
60 |
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60 |
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Gate-Threshold Voltage |
VGS(th) |
VDS = VGS, ID = 1 mA |
2.1 |
0.8 |
3 |
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V |
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VDS = VGS, ID = 0.25 mA |
2.0 |
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1 |
2.5 |
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Gate-Body Leakage |
IGSS |
VDS = 0 V, VGS = "15 V |
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"10 |
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nA |
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VDS = 0 V, VGS = "20 V |
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"100 |
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VDS = 48 V, VGS = 0 V |
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1 |
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Zero Gate Voltage Drain Current |
IDSS |
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TC = 125_C |
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1000 |
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mA |
VDS = 60 V, VGS = 0 V |
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1 |
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TC = 125_C |
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500 |
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On-State Drain Currentb |
I |
VDS = 10 V, VGS = 4.5 V |
0.35 |
0.075 |
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A |
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D(on) |
VDS = 7.5 V, VGS = 10 V |
1 |
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0.5 |
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VGS = 4.5 V, ID = 0.075 A |
4.5 |
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5.3 |
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VGS = 5 V, ID = 0.05 A |
3.2 |
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7.5 |
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Drain-Source On-Resistanceb |
r |
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T = 125_C |
5.8 |
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13.5 |
W |
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DS(on) |
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C |
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VGS = 10 V, ID = 0.5 A |
2.4 |
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5 |
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7.5 |
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TJ = 125_C |
4.4 |
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9 |
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13.5 |
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Forward Transconductanceb |
g |
V |
DS |
= 10 V, I |
= 0.2 A |
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100 |
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80 |
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fs |
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D |
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mS |
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Common Source Output Conductanceb |
g |
V |
DS |
= 5 V, I |
= 0.05 A |
0.5 |
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os |
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D |
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Dynamic |
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Input Capacitance |
Ciss |
VDS = 25 V, VGS = 0 V |
22 |
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60 |
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50 |
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Output Capacitance |
Coss |
11 |
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25 |
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25 |
pF |
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f = 1 MHz |
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Reverse Transfer Capacitance |
Crss |
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2 |
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5 |
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5 |
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www.vishay.com |
Document Number: 70226 |
11-2 |
S-04279— Rev. F, 16-Jul-01 |
2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
SPECIFICATIONS 2N7000 AND 2N7002 (TA = 25_C UNLESS OTHERWISE NOTED)
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Limits |
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2N7000 |
2N7002 |
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Typa |
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Parameter |
Symbol |
Test Conditions |
Min |
Max |
Min |
Max |
Unit |
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Switchingd |
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Turn-On Time |
tON |
VDD = 15 V, RL = 25 W |
7 |
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10 |
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Turn-Off Time |
t |
ID ^0.5 A, VGEN = 10 V, RG = 25 W |
7 |
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10 |
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OFF |
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ns |
Turn-On Time |
tON |
VDD = 30 V, RL = 150 W |
7 |
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20 |
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Turn-Off Time |
t |
ID ^ 0.2 A, VGEN = 10 V, RG = 25 W |
11 |
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20 |
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OFF |
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SPECIFICATIONS VQ1000J/P AND BS170 (TA = 25_C UNLESS OTHERWISE NOTED)
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Limits |
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VQ1000J/P |
BS170 |
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Typa |
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Parameter |
Symbol |
Test Conditions |
Min |
Max |
Min |
Max |
Unit |
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Static |
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Drain-Source Breakdown Voltage |
V(BR)DSS |
VGS = 0 V, ID = 100 mA |
70 |
60 |
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60 |
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V |
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Gate-Threshold Voltage |
VGS(th) |
VDS = VGS, ID = 1 mA |
2.1 |
0.8 |
2.5 |
0.8 |
3 |
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VDS = 0 V, VGS = "10 V |
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"100 |
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Gate-Body Leakage |
IGSS |
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TJ = 125_C |
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"500 |
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nA |
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VDS = 0 V, VGS = "15 V |
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"10 |
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VDS = 25 V, VGS = 0 V |
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0.5 |
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Zero Gate Voltage Drain Current |
IDSS |
VDS = 48 V, VGS = 0 V, TJ = 125_C |
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500 |
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mA |
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VDS = 60 V, VGS = 0 V |
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10 |
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On-State Drain Currentb |
I |
V |
DS |
= 10 V, V = 10 V |
1 |
0.5 |
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A |
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D(on) |
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GS |
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VGS = 5 V, ID = 0.2 A |
4 |
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7.5 |
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Drain-Source On-Resistanceb |
r |
VGS = 10 V, ID = 0.2 A |
2.3 |
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5 |
W |
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DS(on) |
VGS = 10 V, ID = 0.3 A |
2.3 |
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5.5 |
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TJ = 125_C |
4.2 |
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7.6 |
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Forward Transconductanceb |
g |
VDS = 10 V, ID = 0.2 A |
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100 |
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fs |
VDS = 10 V, ID = 0.5 A |
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100 |
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mS |
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Common Source Output Conductanceb |
g |
V |
DS |
=5 V, I = 0.05 A |
0.5 |
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os |
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D |
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Dynamic |
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Input Capacitance |
Ciss |
VDS =25 V, VGS = 0 V |
22 |
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60 |
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60 |
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Output Capacitance |
Coss |
11 |
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25 |
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pF |
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f = 1 MHz |
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Reverse Transfer Capacitance |
Crss |
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2 |
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5 |
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Switchingd |
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Turn-On Time |
tON |
VDD = 15 V, RL = 23 W |
7 |
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10 |
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Turn-Off Time |
t |
ID ^ 0.6 A, VGEN = 10 V, RG = 25 W |
7 |
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10 |
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OFF |
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ns |
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Turn-On Time |
tON |
VDD = 25 V, RL = 125 W |
7 |
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10 |
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Turn-Off Time |
t |
ID ^ 0.2 A, VGEN = 10 V, RG = 25 W |
7 |
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10 |
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OFF |
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Notes |
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a. For DESIGN AID ONLY, not subject to production testing. |
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VNBF06 |
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b.Pulse test: PW v80 ms duty cycle v1%.
c.This parameter not registered with JEDEC.
d.Switching time is essentially independent of operating temperature.
Document Number: 70226 |
www.vishay.com |
S-04279— Rev. F, 16-Jul-01 |
11-3 |
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