SST/U5196NL Series
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New Product |
Vishay Siliconix |
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Monolithic N-Channel JFET Duals |
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SST5198NL |
U5196NL |
U5198NL |
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SST5199NL |
U5197NL |
U5199NL |
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PRODUCT SUMMARY |
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Part Number |
VGS(off) (V) |
V(BR)GSS Min (V) |
gfs Min (mS) |
IG Max (pA) |
jVGS1 - VGS2j Max (mV) |
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U5196NL |
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-0.7 to -4 |
-50 |
1 |
-15 |
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5 |
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U5197NL |
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-0.7 to -4 |
-50 |
1 |
-15 |
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5 |
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SST/U5198NL |
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-0.7 to -4 |
-50 |
1 |
-15 |
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10 |
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SST/U5199NL |
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-0.7 to -4 |
-50 |
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-15 |
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15 |
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FEATURES |
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BENEFITS |
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APPLICATIONS |
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D Anti Latchup Capability |
D External Substrate Bias—Avoids Latchup |
D Wideband Differential Amps |
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D Monolithic Design |
D Tight Differential Match vs. Current |
D High-Speed, Temp-Compensated, |
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D High Slew Rate |
D Improved Op Amp Speed, Settling Time Accuracy |
Single-Ended Input Amps |
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D Low Offset/Drift Voltage |
D Minimum Input Error/Trimming Requirement |
D High Speed Comparators |
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D Low Gate Leakage: 5 pA |
D Insignificant Signal Loss/Error Voltage |
D Impedance Converters |
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D Low Noise |
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D High System Sensitivity |
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D High CMRR: 100 dB |
D Minimum Error with Large Input Signal |
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DESCRIPTION
The SST/U5196NL series of JFET duals are designed for high-performance differential amplification for a wide range of precision test instrumentation applications. This series features tightly matched specs, low gate leakage for accuracy, and wide dynamic range with IG guaranteed at VDG = 20 V.
The U series in the hermetically-sealed TO-78 package is available with full military processing. The SST series SO-8 package provides ease of manufacturing and the symmetrical pinout prevents improper orientation. The SO-8 package is available with tape-and-reel options for compatibility with automatic assembly methods.
Pins 4 and 8 of the SST series and pin 4 on the U series part numbers enable the substrate to be connected to a positive, external bias (VDD) to avoid latchup.
For similar products see the low-noise SST/U401NL series and the low-leakage U421NL/423NL data sheets.
TO-78
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Narrow Body SOIC |
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S1 |
1 |
8 |
SUBSTRATE |
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S1 |
G2 |
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D1 |
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G2 |
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7 |
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7 |
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G1 |
3 |
6 |
D2 |
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SUBSTRATE |
4 |
5 |
S2 |
D1 |
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6 |
D2 |
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Top View |
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3 |
5 |
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G1 |
4 |
S2 |
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Marking Codes: |
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CASE, SUBSTRATE |
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SST5198NL - 5198NL |
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Top View |
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SST5199NL - 5199NL |
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U5196NL, U5198NL |
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U5197NL, U5199NL |
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ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -50 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . 300 _C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 200_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C
Power Dissipation : |
Per Sidea . . . . . . . . . . . . . . . . . . . . . . . . |
250 mW |
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Totalb . . . . . . . . . . . . . . . . . . . . . . . . . . . |
500 mW |
Notes
a.Derate 2 mW/_C above 85_C
b.Derate 4 mW/_C above 85_C
Document Number: 72156 |
www.vishay.com |
S-03468—Rev. B, 11-Mar-03 |
7-1 |
SST/U5196NL Series
Vishay Siliconix |
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New Product |
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SPECIFICATIONS FOR U5196NL AND U5197NL (TA = 25_C UNLESS OTHERWISE NOTED) |
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Limits |
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U5196NL |
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U5197NL |
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Typa |
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Parameter |
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Test Conditions |
Min |
Max |
Min |
Max |
Unit |
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Static |
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Gate-Source Breakdown Voltage |
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V(BR)GSS |
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IG = -1 mA, VDS = 0 V |
-57 |
-50 |
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V |
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Gate-Source Cutoff Voltage |
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VGS(off) |
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VDS = 20 V, ID = 1 nA |
-2 |
-0.7 |
-4 |
-0.7 |
-4 |
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Saturation Drain Currentb |
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IDSS |
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VDS = 20 V, VGS = 0 V |
3 |
0.7 |
7 |
0.7 |
7 |
mA |
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Gate Reverse Current |
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IGSS |
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VGS = -30 V, VDS = 0 V |
-10 |
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-25 |
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pA |
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TA = 150_C |
-20 |
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-50 |
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nA |
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Gate Operating Current |
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IG |
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VDG = 20 V, ID = 200 mA |
-5 |
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-15 |
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-15 |
pA |
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TA = 125_C |
-0.8 |
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-15 |
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-15 |
nA |
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Gate-Source Voltage |
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VGS |
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VDG = 20 V, ID = 200 mA |
-1.5 |
-0.2 |
-3.8 |
-0.2 |
-3.8 |
V |
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Dynamic |
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Common-Source |
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gfs |
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3.0 |
1 |
4 |
1 |
4 |
mS |
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Forward Transconductance |
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VDS |
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Common-Source |
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gos |
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f = 1 kHz |
8 |
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mS |
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Output Conductance |
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Common-Source |
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gfs |
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0.8 |
0.7 |
1.6 |
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1.6 |
mS |
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Forward Transconductance |
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VDS = 20 V, ID = 200 mA |
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Common-Source |
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gos |
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f = 1 kHz |
1 |
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4 |
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4 |
mS |
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Output Conductance |
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Common-Source |
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Ciss |
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3 |
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6 |
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Input Capacitance |
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VDS |
= 20 V, VGS = 0 V |
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pF |
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Common-Source |
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Crss |
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f = 1 MHz |
1 |
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Reverse Transfer Capacitance |
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nV⁄ |
Equivalent Input Noise Voltage |
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en |
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VDS = 20 V, VGS = 0 V, f = 1 kHz |
11 |
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20 |
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20 |
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√Hz |
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Noise Figure |
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NF |
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VDS |
= 20 V, VGS = 0 V |
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0.5 |
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0.5 |
dB |
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f = 100 Hz, RG = 10 MW |
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Matching |
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Differential Gate-Source Voltage |
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VDG = 20 V, ID = 200 mA |
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5 |
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mV |
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Gate-Source Voltage Differential |
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GS1 |
–V |
GS2 |
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DG |
= 20 V, I = 200 mA |
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D |
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5 |
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10 |
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Change with Temperature |
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TA = -55 to 125_C |
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mV/ C |
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DT |
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Saturation Drain Current Ratio |
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IDSS1 |
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VDS = 20 V, VGS = 0 V |
0.98 |
0.95 |
1 |
0.95 |
1 |
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IDSS2 |
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Transconductance Ratio |
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gfs1 |
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0.99 |
0.97 |
1 |
0.97 |
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gfs2 |
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VDS = 20 V, ID = 200 mA |
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Differential Output Conductance |
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f = 1 kHz |
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mS |
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Differential Gate Current |
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VDG = 20 V, ID = 200 mA , TA = 125_C |
0.1 |
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5 |
nA |
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Common Mode Rejection Ratio |
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CMRR |
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VDG = 10 to 20 V, ID = 200 mA |
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dB |
www.vishay.com |
Document Number: 72156 |
7-2 |
S-03468—Rev. B, 11-Mar-03 |
SST/U5196NL Series
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New Product |
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Vishay Siliconix |
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SPECIFICATIONS FOR SST/U5198NL AND SST/U5199NL |
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(TA = 25_C UNLESS OTHERWISE NOTED) |
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Limits |
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SST/U5198NL |
SST/U5199NL |
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Typa |
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Parameter |
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Symbol |
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Test Conditions |
Min |
Max |
Min |
Max |
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Static |
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Gate-Source Breakdown Voltage |
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V(BR)GSS |
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IG = -1 mA, VDS = 0 V |
-57 |
-50 |
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-50 |
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Gate-Source Cutoff Voltage |
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VGS(off) |
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VDS = 20 V, ID = 1 nA |
-2 |
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-4 |
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-4 |
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Saturation Drain Currentb |
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IDSS |
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VDS = 20 V, VGS = 0 V |
3 |
0.7 |
7 |
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mA |
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Gate Reverse Current |
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IGSS |
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VGS = -30 V, VDS = 0 V |
-10 |
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-25 |
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-25 |
pA |
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TA = 150_C |
-20 |
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-50 |
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-50 |
nA |
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Gate Operating Current |
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IG |
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VDG = 20 V, ID = 200 mA |
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-15 |
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-15 |
pA |
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TA =125_C |
-0.8 |
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-15 |
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-15 |
nA |
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Gate-Source Voltage |
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VGS |
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VDG = 20 V, ID = 200 mA |
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-0.2 |
-3.8 |
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-3.8 |
V |
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Dynamic |
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Common-Source |
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gfs |
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3.0 |
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4 |
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4 |
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Forward Transconductance |
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VDS = 20 V, VGS = 0 V, f = 1 kHz |
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Common-Source |
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gos |
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8 |
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mS |
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Output Conductance |
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Common-Source |
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gfs |
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0.8 |
0.7 |
1.6 |
0.7 |
1.6 |
mS |
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Forward Transconductance |
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VDS = 20 V, ID = 200 mA |
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Common-Source |
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gos |
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f = 1 kHz |
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1 |
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4 |
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4 |
mS |
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Output Conductance |
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Common-Source Input Capacitance |
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Ciss |
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3 |
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6 |
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6 |
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VDS = 20 V, VGS = 0 V, f = 1 MHz |
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pF |
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Common-Source |
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Crss |
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1 |
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2 |
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2 |
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Reverse Transfer Capacitance |
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nV⁄ |
Equivalent Input Noise Voltage |
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en |
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VDS = 20 V, VGS = 0 V, f = 1 kHz |
11 |
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√Hz |
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Noise Figure |
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NF |
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VDS = 20 V, VGS = 0 V |
0.5 |
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dB |
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f = 100 Hz, RG = 10 MW (U Only) |
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Matching |
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Differential Gate-Source Voltage |
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|VGS1–VGS2| |
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VDG = 20 V, ID = 200 mA |
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10 |
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15 |
mV |
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D|VGS1–VGS2| |
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SST5198NL |
15 |
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Gate-Source Voltage Differential |
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VDG = 20 V, ID = 200 mA |
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SST5199NL |
30 |
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mV/_C |
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Change with Temperature |
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DT |
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TA = -55 to 125_C |
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U Only |
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20 |
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40 |
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Saturation Drain Current Ratio |
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IDSS1 |
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VDS = 20 V, VGS = 0 V |
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SST Only |
0.97 |
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U Only |
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0.95 |
1 |
0.95 |
1 |
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IDSS2 |
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Transconductance Ratio |
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gfs1 |
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SST Only |
0.97 |
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mS |
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U Only |
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0.95 |
1 |
0.95 |
1 |
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gfs2 |
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V |
DS |
= 20 V, I = 200 mA |
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D |
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Differential Output Conductance |
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|gos1–gos2| |
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f = 1 kHz |
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SST Only |
0.2 |
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U Only |
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1 |
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1 |
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Differential Gate Current |
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|IG1 *IG2| |
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VDG |
= 20 V, ID = 200 mA, |
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SST Only |
0.1 |
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nA |
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T = 125_C |
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U Only |
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5 |
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5 |
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A |
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Common Mode Rejection Ratio |
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CMRR |
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VDG = 10 to 20 V, ID = 200 mA |
97 |
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dB |
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Notes |
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a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. |
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NQP |
b.Pulse test: PW v300 ms duty cycle v3%.
Document Number: 72156 |
www.vishay.com |
S-03468—Rev. B, 11-Mar-03 |
7-3 |