J/SST/U308 Series
Vishay Siliconix
N-Channel JFETs
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J308 |
SST308 |
U309 |
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J309 |
SST309 |
U310 |
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J310 |
SST310 |
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PRODUCT SUMMARY |
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Part Number |
VGS(off) (V) |
V(BR)GSS Min (V) |
gfs Min (mS) |
IDSS Min (mA) |
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J308 |
−1 to −6.5 |
−25 |
8 |
12 |
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J309 |
−1 to −4 |
−25 |
10 |
12 |
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J310 |
−2 to −6.5 |
−25 |
8 |
24 |
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SST308 |
−1 to −6.5 |
−25 |
8 |
12 |
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SST309 |
−1 to −4 |
−25 |
10 |
12 |
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SST310 |
−2 to −6.5 |
−25 |
8 |
24 |
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U309 |
−1 to −4 |
−25 |
10 |
12 |
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U310 |
−2.5 to −6 |
−25 |
10 |
24 |
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FEATURES |
BENEFITS |
APPLICATIONS |
D Excellent High Frequency Gain: |
D Wideband High Gain |
D High-Frequency Amplifier/Mixer |
Gps 11.5 dB @ 450 MHz |
D Very High System Sensitivity |
D Oscillator |
D Very Low Noise: 2.7 dB @ 450 MHz |
D High Quality of Amplification |
D Sample-and-Hold |
D Very Low Distortion |
D High-Speed Switching Capability |
D Very Low Capacitance Switches |
D High ac/dc Switch Off-Isolation |
D High Low-Level Signal Amplification |
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DESCRIPTION |
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The J/SST/U308 series offers superb amplification characteristics. Of special interest is its high-frequency performance. Even at 450 MHz, this series offers high power gain at low noise.
Low-cost J series TO-226AA (TO-92) packaging supports automated assembly with tape-and-reel options. The SST series TO-236 (SOT-23) package provides surface-mount capabilities
and is available with tape-and-reel options. The U series hermetically-sealed TO-206AC (TO-52) package supports full military processing. (See Military and Packaging Information for further details.)
For similar dual products packaged in the TO-78, see the U430/431 data sheet.
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TO-226AA |
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TO-236 |
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TO-206AC |
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(TO-52) |
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(SOT-23) |
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D |
1 |
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G |
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Top View |
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SST308 (Z8)* |
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G and Case |
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Top View |
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SST309 (Z9)* |
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SST310 (Z0)* |
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J308 |
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Top View |
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J309 |
*Marking Code for TO-236 |
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U309 |
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J310 |
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U310 |
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For applications information see AN104.
Document Number: 70237 |
www.vishay.com |
S-50149—Rev. H, 24-Jan-05 |
1 |
J/SST/U308 Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −25 V
Gate Current : |
(J/SST Prefixes) . . . . . . . . . . . . . . . . . . . . |
10 mA |
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(U Prefix) . . . . . . . . . . . . . . . . . . . . . . . . . . |
20 mA |
Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C Storage Temperature : (J/SST Prefixes) . . . . . . . . . . . . . . −55 to 150_C (U Prefix) . . . . . . . . . . . . . . . . . . . . −65 to 175_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to 150_C
Power Dissipation : (J/SST Prefixes)a . . . . . . . . . . . . . . . . . 350 mW (U Prefix)b . . . . . . . . . . . . . . . . . . . . . . . 500 mW
Notes
a.Derate 2.8 mW/_C above 25_C
b.Derate 4 mW/_C above 25_C
SPECIFICATIONS FOR J/SST308, J/SST309 AND J/SST310 (TA = 25_C UNLESS NOTED)
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Limits |
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J/SST308 |
J/SST309 |
J/SST310 |
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Typa |
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Parameter |
Symbol |
Test Conditions |
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Min |
Max |
Min |
Max |
Min |
Max |
Unit |
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Static |
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Gate-Source |
V(BR)GSS |
IG = −1 mA , VDS = 0 V |
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−35 |
−25 |
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−25 |
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−25 |
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V |
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Breakdown Voltage |
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Gate-Source Cutoff Voltage |
VGS(off) |
VDS = 10 V, ID = 1 nA |
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−1 |
−6.5 |
−1 |
−4 |
−2 |
−6.5 |
V |
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Saturation Drain Currentb |
IDSS |
VDS = 10 V, VGS = 0 V |
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12 |
60 |
12 |
30 |
24 |
60 |
mA |
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Gate Reverse Current |
IGSS |
VGS = −15 V, VDS = 0 V |
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−1 |
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−1 |
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−1 |
nA |
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TA = 125_C |
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−0.001 |
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−1 |
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−1 |
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−1 |
mA |
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Gate Operating Current |
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IG |
VDG = 9 V, ID = 10 mA |
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−15 |
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pA |
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Drain-Source On-Resistance |
rDS(on) |
VGS = 0 V, ID = 1 mA |
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35 |
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W |
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Gate-Source Forward Voltage |
VGS(F) |
IG = 10 mA |
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J |
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0.7 |
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V |
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VDS = 0 V |
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Dynamic |
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Common-Source |
gfs |
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14 |
8 |
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10 |
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8 |
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mS |
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Forward Transconductance |
VDS = 10 V, ID = 10 mA |
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Common-Source |
gos |
f = 1 kHz |
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110 |
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250 |
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250 |
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mS |
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Output Conductance |
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Common-Source |
Ciss |
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J |
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Input Capacitance |
VDS = 10 V |
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SST |
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pF |
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VGS = −10 V |
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Common-Source |
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1.9 |
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2.5 |
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2.5 |
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Crss |
f = 1 MHz |
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Reverse Transfer Capacitance |
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SST |
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1.9 |
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Equivalent Input |
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VDS = 10 V, ID = 10 mA |
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nV⁄ |
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en |
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Noise Voltage |
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f = 100 Hz |
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√Hz |
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High Frequency |
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Common-Gate |
gfg |
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f = 105 MHz |
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Forward Transconductance |
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f = 450 MHz |
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mS |
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Common-Gate |
gog |
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f = 105 MHz |
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Output Conductance |
VDS = 10 V |
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f = 450 MHz |
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0.55 |
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Common-Gate Power Gainc |
G |
ID = 10 mA |
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f = 105 MHz |
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pg |
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f = 450 MHz |
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11.5 |
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dB |
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Noise Figure |
NF |
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f = 105 MHz |
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1.5 |
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f = 450 MHz |
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2.7 |
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Notes |
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a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. |
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NZB |
b.Pulse test: PW v300 ms duty cycle v3%.
c.Gain (Gpg) measured at optimum input noise match.
www.vishay.com |
Document Number: 70237 |
2 |
S-50149—Rev. H, 24-Jan-05 |
J/SST/U308 Series
Vishay Siliconix
SPECIFICATIONS FOR U309 AND U310 (TA = 25_C UNLESS NOTED) |
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Limits |
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U309 |
U310 |
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Typa |
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Parameter |
Symbol |
Test Conditions |
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Min |
Max |
Min |
Max |
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Static |
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Gate-Source Breakdown Voltage |
V(BR)GSS |
IG = −1 mA , VDS = 0 V |
−35 |
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−25 |
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−25 |
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V |
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Gate-Source Cutoff Voltage |
VGS(off) |
VDS = 10 V, ID = 1 nA |
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−1 |
−4 |
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−6 |
V |
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Saturation Drain Currentb |
IDSS |
VDS = 10 V, VGS = 0 V |
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12 |
30 |
24 |
60 |
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Gate Reverse Current |
IGSS |
VGS = −15 V, VDS = 0 V |
−0.002 |
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nA |
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TA = 125_C |
−0.001 |
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−0.15 |
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mA |
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Gate Operating Current |
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IG |
VDG = 9 V, ID = 10 mA |
−15 |
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pA |
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Drain-Source On-Resistance |
rDS(on) |
VGS = 0 V, ID = 1 mA |
35 |
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W |
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Gate-Source Forward Voltage |
VGS(F) |
IG = 10 mA , VDS = 0 V |
0.7 |
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V |
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Dynamic |
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Common-Source |
gfs |
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Forward Transconductance |
VDS = 10 V, ID = 10 mA |
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Common-Source |
gos |
f = 1 kHz |
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110 |
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250 |
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250 |
mS |
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Output Conductance |
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Common-Source |
Ciss |
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Input Capacitance |
VDS = 10 V, VGS |
= −10 V |
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pF |
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Common-Source |
Crss |
f = 1 MHz |
1.9 |
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2.5 |
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2.5 |
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Reverse Transfer Capacitance |
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VDS = 10 V, ID = 10 mA |
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nV⁄ |
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Equivalent Input Noise Voltage |
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en |
6 |
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f = 100 Hz |
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√Hz |
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High Frequency |
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Common-Gate |
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f = 105 MHz |
14 |
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gfg |
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Forward Transconductance |
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f = 450 MHz |
13 |
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mS |
Common-Gate |
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f = 105 MHz |
0.16 |
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gog |
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Output Conductance |
VDS = 10 V |
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f = 450 MHz |
0.55 |
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Common-Gate Power Gainc, d |
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ID = 10 mA |
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f = 105 MHz |
16 |
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14 |
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14 |
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G |
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pg |
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f = 450 MHz |
11.5 |
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10 |
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10 |
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dB |
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Noise Figured |
NF |
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f = 105 MHz |
1.5 |
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2 |
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2 |
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f = 450 MHz |
2.7 |
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3.5 |
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3.5 |
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Notes |
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a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. |
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NZB |
b.Pulse test: PW v300 ms duty cycle v3%.
c.Gain (Gpg) measured at optimum input noise match.
d.Not a production test.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Document Number: 70237 |
www.vishay.com |
S-50149—Rev. H, 24-Jan-05 |
3 |