Vishay SST308, SST309, SST310, U309, U310 Schematic [ru]

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Vishay SST308, SST309, SST310, U309, U310 Schematic

J/SST/U308 Series

Vishay Siliconix

N-Channel JFETs

 

 

 

 

J308

SST308

U309

 

 

 

 

J309

SST309

U310

 

 

 

 

J310

SST310

 

 

 

 

 

 

 

 

PRODUCT SUMMARY

 

 

 

 

 

 

 

 

 

 

 

 

Part Number

VGS(off) (V)

V(BR)GSS Min (V)

gfs Min (mS)

IDSS Min (mA)

 

 

J308

−1 to −6.5

−25

8

12

 

 

 

 

 

 

 

 

 

J309

−1 to −4

−25

10

12

 

 

 

 

 

 

 

 

 

J310

−2 to −6.5

−25

8

24

 

 

 

 

 

 

 

 

 

SST308

−1 to −6.5

−25

8

12

 

 

 

 

 

 

 

 

 

SST309

−1 to −4

−25

10

12

 

 

 

 

 

 

 

 

 

SST310

−2 to −6.5

−25

8

24

 

 

 

 

 

 

 

 

 

U309

−1 to −4

−25

10

12

 

 

 

 

 

 

 

 

 

U310

−2.5 to −6

−25

10

24

 

 

 

 

 

 

 

 

 

FEATURES

BENEFITS

APPLICATIONS

D Excellent High Frequency Gain:

D Wideband High Gain

D High-Frequency Amplifier/Mixer

Gps 11.5 dB @ 450 MHz

D Very High System Sensitivity

D Oscillator

D Very Low Noise: 2.7 dB @ 450 MHz

D High Quality of Amplification

D Sample-and-Hold

D Very Low Distortion

D High-Speed Switching Capability

D Very Low Capacitance Switches

D High ac/dc Switch Off-Isolation

D High Low-Level Signal Amplification

 

DESCRIPTION

 

 

The J/SST/U308 series offers superb amplification characteristics. Of special interest is its high-frequency performance. Even at 450 MHz, this series offers high power gain at low noise.

Low-cost J series TO-226AA (TO-92) packaging supports automated assembly with tape-and-reel options. The SST series TO-236 (SOT-23) package provides surface-mount capabilities

and is available with tape-and-reel options. The U series hermetically-sealed TO-206AC (TO-52) package supports full military processing. (See Military and Packaging Information for further details.)

For similar dual products packaged in the TO-78, see the U430/431 data sheet.

 

TO-226AA

 

 

TO-236

 

TO-206AC

 

(TO-92)

 

 

 

 

(TO-52)

 

 

 

(SOT-23)

 

 

 

 

 

 

 

 

 

 

 

 

D

1

 

D

 

 

 

 

 

 

S

 

 

 

1

 

 

 

 

 

 

 

 

S

2

 

 

 

 

 

 

3

G

1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

G

 

 

S

2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3

 

 

 

 

 

 

 

 

2

3

 

 

 

Top View

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SST308 (Z8)*

 

D

 

 

G and Case

 

Top View

 

 

SST309 (Z9)*

 

 

 

 

 

 

 

 

SST310 (Z0)*

 

 

 

 

 

 

J308

 

 

 

 

Top View

 

 

 

 

 

 

 

 

 

 

J309

*Marking Code for TO-236

 

U309

 

J310

 

U310

 

 

 

 

 

 

 

 

 

For applications information see AN104.

Document Number: 70237

www.vishay.com

S-50149—Rev. H, 24-Jan-05

1

J/SST/U308 Series

Vishay Siliconix

ABSOLUTE MAXIMUM RATINGS

Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −25 V

Gate Current :

(J/SST Prefixes) . . . . . . . . . . . . . . . . . . . .

10 mA

 

(U Prefix) . . . . . . . . . . . . . . . . . . . . . . . . . .

20 mA

Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C Storage Temperature : (J/SST Prefixes) . . . . . . . . . . . . . . −55 to 150_C (U Prefix) . . . . . . . . . . . . . . . . . . . . −65 to 175_C

Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to 150_C

Power Dissipation : (J/SST Prefixes)a . . . . . . . . . . . . . . . . . 350 mW (U Prefix)b . . . . . . . . . . . . . . . . . . . . . . . 500 mW

Notes

a.Derate 2.8 mW/_C above 25_C

b.Derate 4 mW/_C above 25_C

SPECIFICATIONS FOR J/SST308, J/SST309 AND J/SST310 (TA = 25_C UNLESS NOTED)

 

 

 

 

 

 

 

 

 

 

 

 

Limits

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

J/SST308

J/SST309

J/SST310

 

 

 

 

 

 

 

 

 

 

Typa

 

 

 

 

 

 

 

 

Parameter

Symbol

Test Conditions

 

Min

Max

Min

Max

Min

Max

Unit

Static

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Gate-Source

V(BR)GSS

IG = −1 mA , VDS = 0 V

 

−35

−25

 

−25

 

−25

 

V

Breakdown Voltage

 

 

 

 

Gate-Source Cutoff Voltage

VGS(off)

VDS = 10 V, ID = 1 nA

 

 

−1

−6.5

−1

−4

−2

−6.5

V

Saturation Drain Currentb

IDSS

VDS = 10 V, VGS = 0 V

 

 

12

60

12

30

24

60

mA

Gate Reverse Current

IGSS

VGS = −15 V, VDS = 0 V

 

−0.002

 

−1

 

−1

 

−1

nA

 

 

TA = 125_C

 

−0.001

 

−1

 

−1

 

−1

mA

 

 

 

 

 

 

 

 

 

 

Gate Operating Current

 

IG

VDG = 9 V, ID = 10 mA

 

−15

 

 

 

 

 

 

pA

 

Drain-Source On-Resistance

rDS(on)

VGS = 0 V, ID = 1 mA

 

35

 

 

 

 

 

 

W

 

Gate-Source Forward Voltage

VGS(F)

IG = 10 mA

 

J

 

0.7

 

1

 

1

 

1

V

 

VDS = 0 V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Dynamic

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Common-Source

gfs

 

 

 

 

 

14

8

 

10

 

8

 

mS

 

Forward Transconductance

VDS = 10 V, ID = 10 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Common-Source

gos

f = 1 kHz

 

110

 

250

 

250

 

250

mS

 

Output Conductance

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Common-Source

Ciss

 

 

 

J

 

4

 

5

 

5

 

5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Input Capacitance

VDS = 10 V

 

SST

 

4

 

 

 

 

 

 

pF

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VGS = −10 V

 

 

 

 

 

 

 

 

 

 

 

Common-Source

 

 

 

 

J

 

1.9

 

2.5

 

2.5

 

2.5

 

Crss

f = 1 MHz

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Reverse Transfer Capacitance

 

 

 

SST

 

1.9

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Equivalent Input

 

 

 

VDS = 10 V, ID = 10 mA

 

 

 

 

 

 

 

 

nV

 

 

en

 

6

 

 

 

 

 

 

 

Noise Voltage

 

f = 100 Hz

 

 

 

 

 

 

 

Hz

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

High Frequency

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Common-Gate

gfg

 

 

f = 105 MHz

 

14

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Forward Transconductance

 

 

f = 450 MHz

 

13

 

 

 

 

 

 

mS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Common-Gate

gog

 

 

f = 105 MHz

 

0.16

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Output Conductance

VDS = 10 V

 

f = 450 MHz

 

0.55

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Common-Gate Power Gainc

G

ID = 10 mA

 

f = 105 MHz

 

16

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

pg

 

 

f = 450 MHz

 

11.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

dB

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Noise Figure

NF

 

 

f = 105 MHz

 

1.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

f = 450 MHz

 

2.7

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Notes

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

 

 

 

 

 

 

 

NZB

b.Pulse test: PW v300 ms duty cycle v3%.

c.Gain (Gpg) measured at optimum input noise match.

www.vishay.com

Document Number: 70237

2

S-50149—Rev. H, 24-Jan-05

J/SST/U308 Series

Vishay Siliconix

SPECIFICATIONS FOR U309 AND U310 (TA = 25_C UNLESS NOTED)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Limits

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

U309

U310

 

 

 

 

 

 

 

Typa

 

 

 

 

 

 

Parameter

Symbol

Test Conditions

 

Min

Max

Min

Max

Unit

Static

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Gate-Source Breakdown Voltage

V(BR)GSS

IG = −1 mA , VDS = 0 V

−35

 

−25

 

−25

 

V

Gate-Source Cutoff Voltage

VGS(off)

VDS = 10 V, ID = 1 nA

 

 

−1

−4

−2.5

−6

V

Saturation Drain Currentb

IDSS

VDS = 10 V, VGS = 0 V

 

 

12

30

24

60

mA

Gate Reverse Current

IGSS

VGS = −15 V, VDS = 0 V

−0.002

 

 

0.15

 

0.15

nA

 

 

TA = 125_C

−0.001

 

 

0.15

 

0.15

mA

 

 

 

 

 

 

 

 

 

Gate Operating Current

 

IG

VDG = 9 V, ID = 10 mA

−15

 

 

 

 

 

pA

Drain-Source On-Resistance

rDS(on)

VGS = 0 V, ID = 1 mA

35

 

 

 

 

 

W

Gate-Source Forward Voltage

VGS(F)

IG = 10 mA , VDS = 0 V

0.7

 

 

1

 

1

V

Dynamic

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Common-Source

gfs

 

 

 

14

 

10

 

10

 

mS

Forward Transconductance

VDS = 10 V, ID = 10 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Common-Source

gos

f = 1 kHz

 

110

 

 

250

 

250

mS

 

 

 

 

 

 

Output Conductance

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Common-Source

Ciss

 

 

 

4

 

 

5

 

5

 

Input Capacitance

VDS = 10 V, VGS

= −10 V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

pF

Common-Source

Crss

f = 1 MHz

1.9

 

 

2.5

 

2.5

 

Reverse Transfer Capacitance

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VDS = 10 V, ID = 10 mA

 

 

 

 

 

 

nV

Equivalent Input Noise Voltage

 

en

6

 

 

 

 

 

 

f = 100 Hz

 

 

 

 

 

Hz

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

High Frequency

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Common-Gate

 

 

 

 

 

f = 105 MHz

14

 

 

 

 

 

 

gfg

 

 

 

 

 

 

 

 

 

 

Forward Transconductance

 

 

f = 450 MHz

13

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

mS

Common-Gate

 

 

 

 

 

f = 105 MHz

0.16

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

gog

 

 

 

 

 

 

 

 

 

 

Output Conductance

VDS = 10 V

 

f = 450 MHz

0.55

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Common-Gate Power Gainc, d

 

 

 

ID = 10 mA

 

f = 105 MHz

16

 

14

 

14

 

 

G

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

pg

 

 

f = 450 MHz

11.5

 

10

 

10

 

 

 

 

 

 

 

 

 

 

 

dB

 

 

 

 

 

 

 

 

 

 

 

 

 

Noise Figured

NF

 

 

f = 105 MHz

1.5

 

 

2

 

2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

f = 450 MHz

2.7

 

 

3.5

 

3.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Notes

 

 

 

 

 

 

 

 

 

 

 

 

 

a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

 

 

 

 

 

 

NZB

b.Pulse test: PW v300 ms duty cycle v3%.

c.Gain (Gpg) measured at optimum input noise match.

d.Not a production test.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

Document Number: 70237

www.vishay.com

S-50149—Rev. H, 24-Jan-05

3

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