VISHAY TEMT1000, TEMT1020, TEMT1030, TEMT1040 Technical data

TEMT1000/1020/1030/1040

VISHAY

Vishay Semiconductors

Silicon Phototransistor

Description

TEMT1000 series are high speed and high sensitive silicon NPN epitaxial planar phototransistors in SMD package with dome lens. Due to integrated Daylight filter devices are sensitive for IR radiation only.

Features

•High photo sensitivity

•Fast response times

•Angle of half sensitivity ϕ = ± 15°

•Daylight filter matched to IR Emitters (λ = 870 nm to 950 nm)

•Versatile terminal configurations

•Matched IR Emitter series: TSML1000

Applications

Detector in electronic control and drive circuits

Absolute Maximum Ratings

Tamb = 25 °C, unless otherwise specified

TEMT1000

TEMT1020

TEMT1030

TEMT1040

16757

IR Detector for Daylight application

Photo interrupters

Counter

Encoder

Parameter	Test condition	Symbol	Value	Unit
Emitter Collector Voltage		VECO	5	V
Collector Current		IC	50	mA
Peak Collector Current	tp/T = 0.5, tp ≤ 10 ms	ICM	100	mA
Total Power Dissipation	Tamb ≤ 55 °C	Ptot	100	mW
Junction Temperature		Tj	100	°C
Storage Temperature Range		Tstg	- 40 to + 100	°C
Operating Temperature Range		Tamb	- 40 to + 85	°C
Soldering Temperature	t ≤ 5 s	Tsd	<260	°C
Thermal Resistance Junction/Ambient		RthJA	400	K/W

Basic Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter			Test condition	Symbol	Min	Typ.	Max		Unit
Collector Emitter Voltage	IC = 1 mA			VCEO	70				V
Collector Dark Current	VCE = 20 V, E = 0			ICEO		1	200		nA
Collector Emitter Capacitance	VCE = 5 V, f = 1 MHz, E=0			CCEO		3			pF
Angle of Half Sensitivity				ϕ		±15			deg
Wavelength of Peak Sensitivity				λp		950			nm
Range of Spectral Bandwidth				λ0.5		750 to 980			nm
Collector Emitter Saturation	E	e	= 1 mW/cm2,	VCEsat			0.3		V
Voltage
	λ = 950 nm, IC = 0.1 mA
Turn-On Time	VS = 5 V, IC = 5 mA,			ton		2.0			µs
	RL = 100 Ω
Document Number 81554								www.vishay.com
Rev. 5, 21-May-03								1

TEMT1000/1020/1030/1040								VISHAY
Vishay Semiconductors
Parameter	Test condition		Symbol	Min	Typ.	Max			Unit
Turn-Off Time	VS = 5 V, IC = 5 mA,		toff		2.3				µs
	RL = 100 Ω
Cut-Off Frequency	VS = 5 V, IC = 5 mA,		fc		180				kHz
	RL = 100 Ω
Collector Light Current	Ee = 1 mW/cm2,		Ica	2	7.0				mA
	λ = 950 nm, VCE = 5V

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

( nA )	104
Current	103
Dark	102					VCE = 20 V
Collector	101
-
CEO
I
	100
												100
	20		40			60			80
94 8304			Tamb - Ambient Temperature									( ° C )

Figure 1. Collector Dark Current vs. Ambient Temperature

)	10
( pF
Capacitance	6									f = 1 MHz
	8
Emitter
	4
Collector-	2
CEO
	0
C	0.1		1						10								100
94 8294			VCE - Collector Emitter Voltage														( V )

Figure 3. Collector Emitter Capacitance vs. Collector Emitter Voltage

	Current	2.0
		1.8
	Collector	1.6
		1.4
	Relative
		1.0
		1.2
	-
	rel	0.8
	ca
	I
		0.6

0

94 8239

VCE = 5 V

Ee = 1 mW/cm2

λı= 950 nm

20

40

60

80

100

Tamb - Ambient Temperature ( ° C )

)	8
( µ s
offTurnTime	4
	6
Turn on /	2
-
off
/ t
on	0
t

0

94 8293

VCE = 5 V

RL = 100 Ω

λ= 950 nm

toff

ton

2

4

6

8

10

12

14

IC - Collector Current ( mA )

Figure 2. Relative Collector Current vs. Ambient Temperature

Figure 4. Turn On/Turn Off Time vs. Collector Current

www.vishay.com	Document Number 81554
2	Rev. 5, 21-May-03

VISHAY							TEMT1000/1020/1030/1040
							Vishay Semiconductors
				0°	10°	20 °
							30°
Sensitivity							40°
Relative-	1.0
	0.9						50°
rel	0.8						60°
S							70°
	0.7
							80°
	0.6	0.4	0.2	0	0.2	0.4	0.6
94 8248

Figure 5. Relative Radiant Sensitivity vs. Angular Displacement

Document Number 81554	www.vishay.com
Rev. 5, 21-May-03	3