VISHAY S503T, S503TR, S503TRW Datasheet

S503T/S503TR/S503TRW

Vishay Telefunken

MOSMIC for TV±Tuner Prestage with 5 V Supply Voltage

MOSMIC - MOS Monolithic Integrated Circuit	Electrostatic sensitive device.
	Observe precautions for handling.

Applications

Low noise gain controlled input stages in UHF-and VHFtuner with 5 V supply voltage.

Features

	C block		RFC
			VDD
	AGC	G2	D
	C block
		G1	RF out
	RF in		C block
		S
	RG1		13650

VDD

DEasy Gate 1 switch-off with PNP switching transistors inside PLL

DHigh AGC-range with less steep slope

DIntegrated gate protection diodes

DLow noise figure

DHigh gain

DImproved cross modulation at gain reduction

DSMD package

2

1

1

2

94 9279	13 579	94 9278	95 10831
3	4	4	3
S503T Marking: 503		S503TR Marking: 53R
Plastic case (SOT 143)		Plastic case (SOT 143R)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1		1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1

1 2

13 654

13 566

4 3

S503TRW Marking: W03 Plastic case (SOT 343R)

1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1

Document Number 85042	www.vishay.de •FaxBack [phone]
Rev. 3, 20-Jan-99	1 (5)

S503T/S503TR/S503TRW

Vishay Telefunken

Absolute Maximum Ratings

Tamb = 25_C, unless otherwise specified

Parameter		Test Conditions	Symbol	Value	Unit
Drain - source voltage			VDS	8	V
Drain current			ID	30	mA
Gate 1/Gate 2	- source peak current		±IG1/G2SM	10	mA
Gate 1/Gate 2	- source voltage		±VG1/G2SM	6	V
Total power dissipation		Tamb ≤ 60 °C	Ptot	200	mW
Channel temperature			TCh	150	°C
Storage temperature range			Tstg	±55 to +150	°C

Maximum Thermal Resistance

Tamb = 25_C, unless otherwise specified

Parameter	Test Conditions	Symbol	Value	Unit
Channel ambient	on glass fibre printed board (25 x 20 x 1.5) mm3	R	450	K/W
	plated with 35mm Cu	thChA

Electrical DC Characteristics

Tamb = 25_C, unless otherwise specified

Parameter	Test Conditions	Symbol	Min	Typ	Max	Unit
Drain - source	ID = 10 mA, VG2S = VG1S = 0	V(BR)DSS	15			V
breakdown voltage
Gate 1 - source	±IG1S = 10 mA, VG2S = VDS = 0	±V(BR)G1SS	7		10	V
breakdown voltage
Gate 2 - source	±IG2S = 10 mA, VG1S = VDS = 0	±V(BR)G2SS	7		10	V
breakdown voltage
Gate 1 - source	+VG1S = 5 V, VG2S = VDS = 0	+IG1SS			20	nA
leakage current
Gate 2 - source	±VG2S = 5 V, VG1S = VDS = 0	±IG2SS			20	nA
leakage current
Drain - source	VDS = VRG1 = 5 V, VG2S = 4 V, RG1 = 470 kW	IDSO	8	13	18	mA
operating current
Gate 1 - source	VDS = 5 V, VG2S = 4, ID = 20 mA	VG1S(OFF)	0.3		1.0	V
cut-off voltage
Gate 2 - source	VDS = VRG1 = 5 V, RG1 = 470 kW, ID = 20 mA	VG2S(OFF)		1.0		V
cut-off voltage

Remark on improving intermodulation behavior:

By setting RG1 smaller than 470 kW. e.g., 390 kW typical value of IDSO will raise and improved intermodulation behavior will be performed.

www.vishay.de •FaxBack [phone]	Document Number 85042
2 (5)	Rev. 3, 20-Jan-99