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RGP02-12E THRU RGP02-20E |
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Vishay Semiconductors |
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formerly General Semiconductor |
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Glass Passivated Junction |
Reverse Voltage 1200 to 2000V |
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Fast Switching Rectifier |
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Case Style GP10E |
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Forward Current 0.5A |
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Features |
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• Plastic package has Underwriters Laboratories |
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Patented*0.107 (2.7) |
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MIL-S-19500 |
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1.0 (25.4) |
Flammability Classification 94V-0 |
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• High temperature metallurgically bonded construction |
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MIN. |
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• Capable of meeting environmental standards of |
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0.080 (2.0) |
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• For use in high frequency rectifier circuits |
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DIA. |
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• Fast switching for high efficiency |
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• Cavity-free glass passivated junction |
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0.205 (5.2) |
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• 0.5 Ampere operation at TA=55°C with no thermal |
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® |
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0.160 (4.1) |
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runaway |
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• Typical IR less than 0.2 A |
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• High temperature soldering guaranteed: |
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350°C/10 seconds, 0.375" (9.5mm) lead length, |
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1.0 (25.4) |
5 lbs. (2.3kg) tension |
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MIN. |
Mechanical Data |
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0.026 (0.66) |
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Case: Molded plastic over glass body |
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0.023 (0.58) |
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DIA. |
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Terminals: Plated axial leads, solderable per |
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Dimensions in inches and (millimeters) |
MIL-STD-750, Method 2026 |
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*Glass-plastic encapsulation technique is covered by |
Polarity: Color band denotes cathode end |
Patent No. 3,996,602, and brazed-lead assembly by Patent No. 3,930,306 |
Mounting Position: Any |
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Weight: 0.012 oz., 0.3 g |
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
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RGP02 |
RGP02 |
RGP02 |
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RGP02 |
RGP02 |
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Parameter |
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Symbols |
-12E |
-14E |
-16E |
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-18E |
-20E |
Units |
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Maximum repetitive peak reverse voltage |
VRRM |
1200 |
1400 |
1600 |
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1800 |
2000 |
V |
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Maximum RMS voltage |
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VRMS |
840 |
980 |
1120 |
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1260 |
1400 |
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Maximum DC blocking voltage |
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VDC |
1200 |
1400 |
1600 |
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1800 |
2000 |
V |
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Maximum average forward rectified current |
IF(AV) |
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0.5 |
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A |
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0.375" (9.5mm) lead length at TA=55°C |
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Peak forward surge current |
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8.3ms single half sine-wave superimposed |
IFSM |
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20 |
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A |
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on rated load (JEDEC Method) |
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Typical thermal resistance (1) |
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RΘ JA |
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65 |
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°C/W |
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RΘ JL |
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30 |
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Operating junction and storage temperature range |
TJ, TSTG |
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-65 to +175 |
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°C |
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Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified. |
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Maximum instantaneous forward voltage at 0.1A |
VF |
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1.8 |
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V |
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Maximum DC reverse current |
TA=25°C |
IR |
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5.0 |
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A |
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at rated DC blocking voltage |
TA=125°C |
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50 |
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Maximum reverse recovery time at |
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trr |
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300 |
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IF=0.5A, IR=1.0A, Irr=0.25A |
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Typical junction capacitance at 4.0V, 1MHz |
CJ |
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5.0 |
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pF |
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Note: |
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(1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5mm) lead length, P.C.B. mounted |
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Document Number 88699 |
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www.vishay.com |
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16-Jan-03 |
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1 |