Vishay SST4391, SST4392, SST4393, 2N4391, 2N4392 Schematic [ru]

2N/PN/SST4391 Series

Vishay Siliconix

N-Channel JFETs

2N4391 PN4391 SST4391

2N4392 PN4392 SST4392

2N4393 PN4393 SST4393

PRODUCT SUMMARY

Part Number	VGS(off) (V)	rDS(on) Max (W)	ID(off) Typ (pA)	tON Typ (ns)
2N/PN/SST4391	–4 to –10	30	5	4
2N/PN/SST4392	–2 to –5	60	5	4
2N/PN/SST4393	–0.5 to –3	100	5	4

FEATURES

DLow On-Resistance: 4391<30 W

DFast Switching—t ON: 4 ns

DHigh Off-Isolation: ID(off) with Low Leakage

DLow Capacitance: < 3.5 pF

DLow Insertion Loss

DESCRIPTION

BENEFITS	APPLICATIONS
D Low Error Voltage	D Analog Switches
D High-Speed Analog Circuit Performance	D Choppers
D Negligible “Off-Error,” Excellent Accuracy	D Sample-and-Hold
D Good Frequency Response, Low Glitches	D Normally “On” Switches
D Eliminates Additional Buffering	D Current Limiters
	D Commutators

The 2N/PN/SST4391 series features many of the superior characteristics of JFETs which make it a good choice for demanding analog switching applications and for specialized amplifier circuits.

The 2N series hermetically-sealed TO-206AA (TO-18) can is available with processing per MIL-S-19500 (see Military Information). Both the PN, TO-226AA (TO-92), and SST, TO-236 (SOT-23), series are available in tape-and-reel for automated assembly (see Packaging Information). For similar dual products, see the 2N5564/5565/5566 data sheet.

	TO-206AA
	(TO-18)		TO-226AA
			(TO-92)	TO-236
S				(SOT-23)
		D	1
1			D	1
		S	2	3	G
			S	2
2	3	G	3
D		G and Case
	Top View		Top View	Top View
	2N4391		PN4391	SST4391 (CA)*
	2N4392		PN4392	SST4392 (CB)*
	2N4393		PN4393	SST4393 (CC)*
				*Marking Code for TO-236

For applications information see AN104 and AN106

.

Document Number: 70241	www.vishay.com
S-04028—Rev. F, 04-Jan-01	7-1

2N/PN/SST4391 Series

Vishay Siliconix

ABSOLUTE MAXIMUM RATINGS

Gate-Drain, Gate-Source Voltage:

(2N/PN Prefixes) . . . . . . . . . . . . . . . . . . . –40 V

(SST Prefix) . . . . . . . . . . . . . . . . . . . . . . . –35 V

Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA

Lead Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 _C

Storage Temperature : (2N Prefix) . . . . . . . . . . . . . . . . . . –65 to 200 _C (PN/SST Prefixes) . . . . . . . . . . . –55 to 150 _C

Operating Junction Temperature :

(2N Prefix) . . . . . . . . . . . . . . . . . . –55 to 200 _C

(PN/SST Prefixes) . . . . . . . . . . . –55 to 150 _C

Power Dissipation : (2N Prefix)a . . . . . . . . . . (TC = 25_C) 1800 mW

(PN/SST Prefixes)b . . . . . . . . . . . . . . . 350 mW

Notes

a.Derate 10 mW/_C above 25_C

b.Derate 2.8 mW/_C above 25_C

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

Limits

4391

4392

4393

Typa

Parameter

Symbol

Test Conditions

Min

Max

Min

Max

Min

Max

Unit

Static

Gate-Source

V(BR)GSS

IG = –1 mA, VDS = 0 V

–55

–40

–40

–40

Breakdown Voltage

V

Gate-Source

VGS(off)

VDS = 20 V

2N/PN: ID = 1 nA

–4

–10

–2

–5

–0.5

–3

Cutoff Voltage

VDS = 15 V

SST: ID = 10 nA

2N

50

150

25

75

5

30

Saturation Drain

IDSS

VDS = 20 V, VGS = 0 V

PN

50

150

25

100

5

60

mA

Currentb

SST

50

25

5

VGS = –20 V

2N/SST

–5

–100

–100

–100

pA

PN

–5

–1000

–1000

–1000

VDS = 0 V

Gate Reverse Current

I

2N: TA = 150_C

–13

–200

–200

–200

GSS

PN: TA = 100_C

–1

–200

–200

–200

nA

SST: TA = 125_C

–3

Gate Operating Current

IG

VDG = 15 V, ID = 10 mA

–5

2N: VGS = –5 V

5

100

pA

2N: VGS = –7 V

5

100

VDS = 20 V

2N: VGS = –12 V

5

100

PN: VGS = –5 V

0.005

1

PN: VGS = –7 V

0.005

1

nA

PN: VGS = –12 V

0.005

1

SST VDS = 10 V, VGS = –10 V

5

100

100

100

pA

Drain Cutoff Current

ID(off)

2N: V

= –5 V

13

200

GS

VDS = 20 V

2N: VGS

= –7 V

13

200

TA = 150_C

2N: VGS = –12 V

13

200

PN: VGS = –5 V

1

200

nA

VDS = 20 V

PN: VGS

= –7 V

1

200

TA = 100_C

PN: VGS = –12 V

1

200

VDS = 10 V

SST: VGS

= –10 V

3

TA = 125_C

ID = 3 mA

0.25

0.4

Drain-Source

VDS(on)

VGS = 0 V

ID = 6 mA

0.3

0.4

V

On-Voltage

ID = 12 mA

0.35

0.4

Drain-Source

rDS(on)

VGS = 0 V, ID = 1 mA

30

60

100

W

On-Resistance

Gate-Source

VGS(F)

IG = 1 mA

2N

0.7

1

1

1

V

Forward Voltage

VDS = 0 V

PN/SST

0.7

www.vishay.com

Document Number: 70241

7-2

S-04028— Rev. F, 04-Jan-01

2N/PN/SST4391 Series

Vishay Siliconix

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

Limits

4391

4392

4393

Typa

Parameter

Symbol

Test Conditions

Min

Max

Min

Max

Min

Max

Unit

Dynamic

Common-Source

gfs

6

mS

Forward Transconductance

VDS = 20 V, ID = 1 mA, f = 1 kHz

Common-Source

gos

25

mS

Output Conductance

Drain-Source

rDS(on)

VGS = 0 V, ID = 0 mA , f = 1 kHz

30

60

100

W

On-Resistance

2N

12

14

14

14

Common-Source

VDS = 20 V, VGS

= 0 V

Ciss

PN

12

16

16

16

Input Capacitance

f = 1 MHz

SST

13

2N: VGS = –5 V

3.3

3.5

2N: VGS = –7 V

3.2

3.5

2N: VGS = –12 V

2.8

3.5

pF

Common-Source

PN: VGS = –5 V

3.5

5

VDS = 0 V

Reverse Transfer

Crss

PN: VGS = –7 V

3.4

5

f = 1 MHz

Capacitance

PN: VGS = –12 V

3.0

5

SST: VGS = –5 V

3.6

SST: VGS = –7 V

3.5

SST: VGS = –12 V

3.1

Equivalent Input

VDS = 10 V, ID = 10 mA

nV⁄

en

3

Noise Voltage

f = 1 kHz

√ Hz

Switching

td(on)

2N/PN

2

15

15

15

Turn-On Time

SST

2

tr

2N/PN

2

5

5

5

VDD = 10 V

SST

2

VGS(H) = 0 V

ns

2N/PN

6

20

35

50

td(off)

See Switching Circuit

Turn-Off Time

SST

6

tf

2N/PN

13

15

20

30

SST

13

Notes

a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

NCB

b.Pulse test: PW v300 ms duty cycle v3%.

Document Number: 70241	www.vishay.com
S-04028— Rev. F, 04-Jan-01	7-3