2N/PN/SST4117A Series
Vishay Siliconix
N-Channel JFETs
2N4117A PN4117A SST4117 2N4118A PN4118A SST4118 2N4119A PN4119A SST4119
PRODUCT SUMMARY
Part Number |
VGS(off) (V) |
V(BR)GSS Min (V) |
gfs Min (mS) |
IDSS Min (mA) |
4117 |
−0.6 to −1.8 |
−40 |
70 |
30 |
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4118 |
−1 to −3 |
−40 |
80 |
80 |
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4119 |
−2 to −6 |
−40 |
100 |
200 |
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FEATURES
DUltra-Low Leakage: 0.2 pA
DVery Low Current/Voltage Operation
DUltrahigh Input Impedance
DLow Noise
BENEFITS |
APPLICATIONS |
D Insignificant Signal Loss/Error Voltage |
D High-Impedance Transducer |
with High-Impedance Source |
Amplifiers |
D Low Power Consumption (Battery) |
D Smoke Detector Input |
D Maximum Signal Output, Low Noise |
D Infrared Detector Amplifier |
D High Sensitivity to Low-Level Signals |
D Precision Test Equipment |
DESCRIPTION
The 2N/PN/SST4117A series of n-channel JFETs provide ultra-high input impedance. These devices are specified with a 1-pA limit and typically operate at 0.2 pA. This makes them perfect choices for use as high-impedance sensitive front-end amplifiers.
The hermetically sealed TO-206AF package allows full military processing per MIL-S-19500 (see Military Information). The TO-226A (TO-92) plastic package provides a low-cost option. The TO-236 (SOT-23) package provides surface-mount capability. Both the PN and SST series are available in tape-and-reel for automated assembly (see Packaging Information).
TO-206AF |
TO-226AA |
TO-236 |
(TO-72) |
(TO-92) |
(SOT-23) |
S |
C |
14
23
D G
Top View 2N4117A 2N4118A 2N4119A
For applications information see AN105.
D |
1 |
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3 G |
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Top View |
Top View |
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PN4117A |
SST4117 (T7)* |
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PN4118A |
SST4118 (T8)* |
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PN4119A |
SST4119 (T9)* |
*Marking Code for TO-236
Document Number: 70239 |
www.vishay.com |
S-41231—Rev. G, 28-Jun-04 |
1 |
2N/PN/SST4117A Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Source/Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
−40V |
Forward Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Storage Temperature : (2N Prefix) . . . . . . . . . . . . . . . . . . . −65 to 175_C (PN, SST Prefix) . . . . . . . . . . . . . −55 to 150_C
Operating Junction Temperature :
(2N Prefix) . . . . . . . . . . . . . . . . . . . −55 to 175_C (PN, SST Prefix) . . . . . . . . . . . . . −55 to 150_C
Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Power Dissipation (case 25_C) :
(2N Prefix)a . . . . . . . . . . . . . . . . . . . . . . 300 mW
(PN, SST Prefix)b . . . . . . . . . . . . . . . . |
350 mW |
Notes
a.Derate 2 mW/_C above 25_C
b.Derate 2.8 mW/_C above 25_C
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) |
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Limits |
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4117 |
4118 |
4119 |
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Parameter |
Symbol |
Test Conditions |
Typa |
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Min |
Max |
Min |
Max |
Min |
Max |
Unit |
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Static |
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Gate-Source |
V(BR)GSS |
IG = −1 mA , VDS = 0 V |
−70 |
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−40 |
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−40 |
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−40 |
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Breakdown Voltage |
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V |
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Gate-Source Cutoff Voltage |
VGS(off) |
VDS = 10 V, ID = 1 nA |
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−0.6 |
−1.8 |
−1 |
−3 |
−2 |
−6 |
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Saturation Drain Current |
IDSS |
VDS = 10 V, VGS = 0 V |
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30 |
90 |
80 |
240 |
200 |
600 |
mA |
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VGS = −20 V |
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−0.2 |
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−1 |
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−1 |
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−1 |
pA |
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VDS = 0 V |
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2N |
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VGS = −20 V |
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VDS |
= 0 V |
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−0.4 |
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−2.5 |
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−2.5 |
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−2.5 |
nA |
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Gate Reverse Current |
IGSS |
TA = 150_C |
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VGS = −10 V |
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PN |
−0.2 |
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−1 |
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−1 |
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−1 |
pA |
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SST |
−0.2 |
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−10 |
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−10 |
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−10 |
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VDS = 0 V |
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VGS = −10 V |
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VDS |
= 0 V |
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PN/SST |
−0.03 |
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−2.5 |
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−2.5 |
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−2.5 |
nA |
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TA = 100_C |
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Gate Operating Currentb |
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I |
V |
DG |
= 15 V, I |
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= 30 mA |
−0.2 |
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D |
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pA |
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Drain Cutoff Currentb |
I |
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V |
DS |
= 10 V, V |
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= −8 V |
0.2 |
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D(off) |
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GS |
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Gate-Source Forward Voltageb |
V |
GS(F) |
I = 1 mA , V |
DS |
= 0 V |
0.7 |
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V |
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Dynamic |
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Common-Source |
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gfs |
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70 |
210 |
80 |
250 |
100 |
330 |
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Forward Transconductance |
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VDS |
= 10 V, VGS = 0 V |
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mS |
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Common-Source |
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f = 1 kHz |
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3 |
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10 |
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Output Conductance |
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Common-Source |
Ciss |
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2N/PN |
1.2 |
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3 |
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Input Capacitance |
VDS = 10 V |
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SST |
1.2 |
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VGS = 0 V |
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pF |
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2N/PN |
0.3 |
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1.5 |
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1.5 |
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1.5 |
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Common-Source |
Crss |
f = 1 MHz |
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Reverse Transfer Capacitance |
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SST |
0.3 |
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Equivalent Input Noise Voltageb |
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VDS |
= 10 V, VGS = 0 V |
15 |
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nV⁄ |
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n |
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f = 1 kHz |
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√Hz |
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Notes |
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a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. |
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NT |
b.This parameter not registered with JEDEC.
www.vishay.com |
Document Number: 70239 |
2 |
S-41231—Rev. G, 28-Jun-04 |